公开(公告)号：US20190189502A1

公开(公告)日：2019-06-20

申请号：US16015809

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inho Kim ,  Woohyun LEE ,  Oik KWON ,  Sang-Kuk KIM ,  Yeonji KIM ,  Jongchul PARK

IPC: H01L21/768 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L21/76816 ,  H01L21/76804 ,  H01L27/11573 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: A semiconductor device includes a first lower insulating interlayer, a protection insulating layer, and a first upper insulating interlayer that are sequentially stacked on a substrate, and a conductive pattern penetrating the first upper insulating interlayer, the protection insulating layer; and the first lower insulating interlayer. The conductive pattern includes a line part extending in a direction parallel to an upper surface of the substrate and contact parts extending from the line part toward the substrate. The contact parts are separated from each other with an insulating pattern therebetween. The insulating pattern includes a portion of each of the first upper insulating interlayer, the protection insulating layer, and the first lower insulating interlayer. At least a portion of the insulating pattern has a stepped profile.

公开(公告)号：US20190165257A1

公开(公告)日：2019-05-30

申请号：US15970963

申请日：2018-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun LEE ,  Sang-Kuk KIM ,  Oik KWON ,  lnho KIM ,  Jongchul PARK ,  Kwangyoung OH

IPC: H01L43/08 ,  H01F10/32 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/1087 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device includes a lower interlayer insulating layer on a substrate, and a plurality of magnetic tunnel junction patterns on the lower interlayer insulating layer and isolated from direct contact with each other in a direction extending parallel to a top surface of the substrate. The lower interlayer insulating layer includes an upper surface including a recessed surface and a top surface, the recessed surface at least partially defining an inner sidewall and a bottom surface of a recess region between adjacent magnetic tunnel junction patterns, such that the recessed surface at least partially defines the recess region. The inner sidewall is inclined at an acute angle with respect to the top surface of the substrate, and the bottom surface has a shape that is convex toward the top surface of the substrate, in direction extending perpendicular to the top surface of the substrate.

公开(公告)号：US20190189916A1

公开(公告)日：2019-06-20

申请号：US16284439

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yil-hyung LEE ,  Jong-Kyu KIM ,  Jongchul PARK ,  Sang-Kuk KIM ,  Jongsoon PARK ,  Hyeji YOON ,  Woohyun LEE

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/222

Abstract: An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.