公开(公告)号：US20240130212A1

公开(公告)日：2024-04-18

申请号：US18379828

申请日：2023-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inoue NAOKI ,  Tsunehiro NISHI ,  Yonghoon MOON

IPC: H10K71/20

CPC classification number: H10K71/233

Abstract: A method of manufacturing a semiconductor device, including forming a plurality of first organic patterns spaced apart from one another in one direction on a supporting layer, wherein the plurality of first organic patterns include ion-implanted patterns, forming a plurality of inorganic patterns on the supporting layer that are in contact with the plurality of first organic patterns and spaced apart from one other in the one direction, wherein the inorganic patterns include ion-implanted patterns, forming a plurality of second organic patterns arranged between the plurality of inorganic patterns on the supporting layer, wherein the second organic patterns include ion-implanted patterns, and selectively etching the ion-implanted inorganic patterns to form a plurality of space patterns that are arranged between the ion-implanted first organic patterns and the ion-implanted second organic patterns.

公开(公告)号：US20250123563A1

公开(公告)日：2025-04-17

申请号：US18601349

申请日：2024-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaejun LEE ,  Cheol KANG ,  Hana KIM ,  Sungan DO ,  Yonghoon MOON

IPC: G03F7/039 ,  C08F218/00 ,  C08F220/18 ,  C08F220/30

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 below and a second repeating unit represented by Formula 2 below, a resist composition including the same, and a method of forming a pattern using the same. In Formulae 1 and 2, L11 to L13, L21 to L24, a11 to a13, a21 to a24, A11, A21, X11, R11, R12, R21 to R23, b12, b22, b23, p11 and p21 are as described above in the specification.

公开(公告)号：US20240310724A1

公开(公告)日：2024-09-19

申请号：US18589918

申请日：2024-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Honggu IM ,  Jaeyeon KIM ,  Juyoung KIM ,  Jicheol PARK ,  Yechan KIM ,  Yonghoon MOON

IPC: G03F7/004 ,  G03F7/00

CPC classification number: G03F7/0045 ,  G03F7/70033

Abstract: Provided is a photoresist composition including a chemically amplified polymer, a photoacid generator, a photo-decomposable quencher including a pyridinium-based material that generates a neutral material by exposure and acts as a base to neutralize an acid before exposure, and a solvent.