公开(公告)号：US20230194985A1

公开(公告)日：2023-06-22

申请号：US18076818

申请日：2022-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo KIM ,  Sumin KIM ,  Hyunwoo KIM ,  Yechan KIM ,  Juyoung KIM ,  Jicheol PARK ,  Giyoung SONG ,  Suk Koo HONG

IPC: G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0392 ,  H01L21/0276 ,  H01L21/0275

Abstract: A brush polymer for a photoresist, a photoresist composition, and a method of manufacturing an integrated circuit device, the brush polymer including a core and a plurality of side polymer chains, the plurality of side polymer chains being bonded to the core and extending from the core to form a bottle-brush polymer or a star-brush polymer, together with the core, wherein each of the plurality of side polymer chains includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2:

公开(公告)号：US20240310724A1

公开(公告)日：2024-09-19

申请号：US18589918

申请日：2024-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Honggu IM ,  Jaeyeon KIM ,  Juyoung KIM ,  Jicheol PARK ,  Yechan KIM ,  Yonghoon MOON

IPC: G03F7/004 ,  G03F7/00

CPC classification number: G03F7/0045 ,  G03F7/70033

Abstract: Provided is a photoresist composition including a chemically amplified polymer, a photoacid generator, a photo-decomposable quencher including a pyridinium-based material that generates a neutral material by exposure and acts as a base to neutralize an acid before exposure, and a solvent.

公开(公告)号：US20230130998A1

公开(公告)日：2023-04-27

申请号：US17966970

申请日：2022-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Hyunwoo KIM ,  Jicheol PARK ,  Honggu IM

IPC: G03F7/06 ,  G03F7/039

Abstract: A photoacid generator (PAG) and a photoresist composition including the PAG, the PAG being represented by Formula I below,

公开(公告)号：US20230123035A1

公开(公告)日：2023-04-20

申请号：US17826234

申请日：2022-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhyeon PARK ,  Hyunwoo KIM ,  Suk Koo HONG ,  Su Min KIM ,  Yechan KIM ,  Jicheol PARK ,  Honggu IM

IPC: G03F7/039 ,  G03F7/004 ,  C08F228/02 ,  C08F220/18 ,  C08F226/02 ,  C08F220/30 ,  C08F214/18

Abstract: The present disclosure relates to a polymer for photoresist and a photoresist composition including the same. The polymer for photoresist may include a polymerization unit comprising a sensitizer, and a protection group. The polymerization unit may include a structure of chemical formula 1: wherein R1 is hydrogen, a halogen element, a methyl group, a trifluoromethyl group, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or unsubstituted arylalkyl group having 6 to 18 carbon atoms, and n is an integer of 1 to 100,000.