公开(公告)号：US20240288771A1

公开(公告)日：2024-08-29

申请号：US18238662

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji cheol PARK ,  Seonghyeon AHN ,  Honggu IM

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

CPC classification number: G03F7/039 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/0272

Abstract: A semiconductor photoresist composition and a method of forming patterns, the composition includes an acid reactive polymer; a resin additive including a block copolymer; a photo acid generator; a photo-decomposable quencher; and a solvent, wherein the block copolymer includes an A-block and a B-block, a water contact angle of a polymer film consisting of the A-block is greater than about 50° and less than or equal to about 100°, and a water contact angle of a polymer film consisting of the B-block is greater than about 0° and less than or equal to about 50°.

公开(公告)号：US20240168381A1

公开(公告)日：2024-05-23

申请号：US18377365

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jincheol PARK ,  Seonghyeon AHN ,  Honggu IM ,  Sungmin KO ,  Juyoung KIM ,  Juhyeon PARK ,  Naery YU

IPC: G03F7/022 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0226 ,  G03F7/0045 ,  G03F7/2004

Abstract: A photoresist composition for extreme ultraviolet (EUV) radiation and a method of manufacturing a semiconductor device, the photoresist composition includes a polymer resin; a photoacid generator; and a photoreactive additive that includes at least two diazonaphthoquinone (DNQ) groups, wherein the at least two DNQ groups are represented by Formula 1 or Formula 2 described herein.

公开(公告)号：US20240310724A1

公开(公告)日：2024-09-19

申请号：US18589918

申请日：2024-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Honggu IM ,  Jaeyeon KIM ,  Juyoung KIM ,  Jicheol PARK ,  Yechan KIM ,  Yonghoon MOON

IPC: G03F7/004 ,  G03F7/00

CPC classification number: G03F7/0045 ,  G03F7/70033

Abstract: Provided is a photoresist composition including a chemically amplified polymer, a photoacid generator, a photo-decomposable quencher including a pyridinium-based material that generates a neutral material by exposure and acts as a base to neutralize an acid before exposure, and a solvent.

公开(公告)号：US20230130998A1

公开(公告)日：2023-04-27

申请号：US17966970

申请日：2022-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Hyunwoo KIM ,  Jicheol PARK ,  Honggu IM

IPC: G03F7/06 ,  G03F7/039

Abstract: A photoacid generator (PAG) and a photoresist composition including the PAG, the PAG being represented by Formula I below,

公开(公告)号：US20230123035A1

公开(公告)日：2023-04-20

申请号：US17826234

申请日：2022-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhyeon PARK ,  Hyunwoo KIM ,  Suk Koo HONG ,  Su Min KIM ,  Yechan KIM ,  Jicheol PARK ,  Honggu IM

IPC: G03F7/039 ,  G03F7/004 ,  C08F228/02 ,  C08F220/18 ,  C08F226/02 ,  C08F220/30 ,  C08F214/18

Abstract: The present disclosure relates to a polymer for photoresist and a photoresist composition including the same. The polymer for photoresist may include a polymerization unit comprising a sensitizer, and a protection group. The polymerization unit may include a structure of chemical formula 1: wherein R1 is hydrogen, a halogen element, a methyl group, a trifluoromethyl group, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or unsubstituted arylalkyl group having 6 to 18 carbon atoms, and n is an integer of 1 to 100,000.