公开(公告)号：US20220334474A1

公开(公告)日：2022-10-20

申请号：US17721852

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongjoon LEE ,  Sungan DO ,  Sukkoo HONG ,  Seongji KWON ,  Jonghoon KIM ,  Sooyoung KIM ,  Jaehee CHOI

IPC: G03F7/004 ,  G03F7/038

Abstract: A photoresist composition and a method of fabricating a semiconductor device, the composition including a photosensitive polymer having a protecting group; a photoacid generator (PAG); a metal precursor, the metal precursor being capable of generating metal ions and secondary electrons in response to irradiating light of a 13.5 nm wavelength thereto; and a solvent.

公开(公告)号：US20250123563A1

公开(公告)日：2025-04-17

申请号：US18601349

申请日：2024-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaejun LEE ,  Cheol KANG ,  Hana KIM ,  Sungan DO ,  Yonghoon MOON

IPC: G03F7/039 ,  C08F218/00 ,  C08F220/18 ,  C08F220/30

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 below and a second repeating unit represented by Formula 2 below, a resist composition including the same, and a method of forming a pattern using the same. In Formulae 1 and 2, L11 to L13, L21 to L24, a11 to a13, a21 to a24, A11, A21, X11, R11, R12, R21 to R23, b12, b22, b23, p11 and p21 are as described above in the specification.

公开(公告)号：US20230038110A1

公开(公告)日：2023-02-09

申请号：US17858921

申请日：2022-07-06

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minyoung LEE ,  Hyungrang MOON ,  Ryunmin HEO ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC: G03F7/16 ,  G03F7/11

Abstract: A composition for removing edge beads from a metal-containing resist, and a method of forming patterns including step of removing edge beads using the same are provided. The composition for removing edge beads from a metal-containing resist includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxyl group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

公开(公告)号：US20230176477A1

公开(公告)日：2023-06-08

申请号：US17841031

申请日：2022-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukkoo HONG ,  Moohyun KOH ,  Kyungoh KIM ,  Yechan KIM ,  Kyunghwan NOH ,  Sungan DO ,  Hyun-Ji SONG

IPC: G03F7/004 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/38 ,  H01L21/0274

Abstract: A photoresist composition includes an organometallic compound including at least one metal-ligand bond, the organometallic compound including a metal core and at least one organic ligand bonded to the metal core, and being configured such that the at least one metal-ligand bond is not breakable by exposure to light or moisture; a photoinitiator generating an acid or a radical in response to exposure to light; and a solvent.

公开(公告)号：US20230037563A1

公开(公告)日：2023-02-09

申请号：US17858924

申请日：2022-07-06

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ryunmin HEO ,  Hyungrang MOON ,  Minyoung LEE ,  Minsoo KIM ,  Youngkwon KIM ,  Jaehyun KIM ,  Changsoo WOO ,  Jung Min CHOI ,  Moohyun KOH ,  Jungah KIM ,  Sungan DO ,  Sang Won BAE ,  Hoon HAN ,  SukKoo HONG

IPC: G03F7/32

Abstract: A metal-containing photoresist developer composition, and a method of forming patterns including a step of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxy group (—OH). The heptagonal ring compound has at least two double bonds in the ring.