公开(公告)号：US20210223692A1

公开(公告)日：2021-07-22

申请号：US16994957

申请日：2020-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunji SONG ,  Sukkoo HONG ,  Sumin KIM ,  Yechan KIM ,  Juyoung KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Songse YI

IPC: G03F7/004 ,  G03F7/039 ,  C07D277/26 ,  C07D263/32 ,  C07D233/64 ,  C07D213/68

Abstract: A photo-decomposable compound, a photoresist composition, and a method of manufacturing an IC device, the compound generating acid upon exposure and acts as a quenching base that neutralizes acid in an unexposed state and being represented by Formula 1: wherein, in Formula 1, Ra is a C5 to C40 substituted or unsubstituted cyclic hydrocarbon group including at least one nitrogen atom, Ya is a C1 to C20 divalent linear or cyclic hydrocarbon group, n is an integer of 1 to 5, and A+ is a counter ion.

公开(公告)号：US20210255544A1

公开(公告)日：2021-08-19

申请号：US17003414

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Suk Koo HONG ,  Su Min KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039

Abstract: A resist composition including a polymer; a photoacid generator; and a material represented by Formula 1:

公开(公告)号：US20240310724A1

公开(公告)日：2024-09-19

申请号：US18589918

申请日：2024-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Honggu IM ,  Jaeyeon KIM ,  Juyoung KIM ,  Jicheol PARK ,  Yechan KIM ,  Yonghoon MOON

IPC: G03F7/004 ,  G03F7/00

CPC classification number: G03F7/0045 ,  G03F7/70033

Abstract: Provided is a photoresist composition including a chemically amplified polymer, a photoacid generator, a photo-decomposable quencher including a pyridinium-based material that generates a neutral material by exposure and acts as a base to neutralize an acid before exposure, and a solvent.

公开(公告)号：US20230130998A1

公开(公告)日：2023-04-27

申请号：US17966970

申请日：2022-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Hyunwoo KIM ,  Jicheol PARK ,  Honggu IM

IPC: G03F7/06 ,  G03F7/039

Abstract: A photoacid generator (PAG) and a photoresist composition including the PAG, the PAG being represented by Formula I below,

公开(公告)号：US20230123035A1

公开(公告)日：2023-04-20

申请号：US17826234

申请日：2022-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhyeon PARK ,  Hyunwoo KIM ,  Suk Koo HONG ,  Su Min KIM ,  Yechan KIM ,  Jicheol PARK ,  Honggu IM

IPC: G03F7/039 ,  G03F7/004 ,  C08F228/02 ,  C08F220/18 ,  C08F226/02 ,  C08F220/30 ,  C08F214/18

Abstract: The present disclosure relates to a polymer for photoresist and a photoresist composition including the same. The polymer for photoresist may include a polymerization unit comprising a sensitizer, and a protection group. The polymerization unit may include a structure of chemical formula 1: wherein R1 is hydrogen, a halogen element, a methyl group, a trifluoromethyl group, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or unsubstituted arylalkyl group having 6 to 18 carbon atoms, and n is an integer of 1 to 100,000.

公开(公告)号：US20230194985A1

公开(公告)日：2023-06-22

申请号：US18076818

申请日：2022-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo KIM ,  Sumin KIM ,  Hyunwoo KIM ,  Yechan KIM ,  Juyoung KIM ,  Jicheol PARK ,  Giyoung SONG ,  Suk Koo HONG

IPC: G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0392 ,  H01L21/0276 ,  H01L21/0275

Abstract: A brush polymer for a photoresist, a photoresist composition, and a method of manufacturing an integrated circuit device, the brush polymer including a core and a plurality of side polymer chains, the plurality of side polymer chains being bonded to the core and extending from the core to form a bottle-brush polymer or a star-brush polymer, together with the core, wherein each of the plurality of side polymer chains includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2:

公开(公告)号：US20230176477A1

公开(公告)日：2023-06-08

申请号：US17841031

申请日：2022-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukkoo HONG ,  Moohyun KOH ,  Kyungoh KIM ,  Yechan KIM ,  Kyunghwan NOH ,  Sungan DO ,  Hyun-Ji SONG

IPC: G03F7/004 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/38 ,  H01L21/0274

Abstract: A photoresist composition includes an organometallic compound including at least one metal-ligand bond, the organometallic compound including a metal core and at least one organic ligand bonded to the metal core, and being configured such that the at least one metal-ligand bond is not breakable by exposure to light or moisture; a photoinitiator generating an acid or a radical in response to exposure to light; and a solvent.

公开(公告)号：US20230120542A1

公开(公告)日：2023-04-20

申请号：US18080348

申请日：2022-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sumin KIM ,  Hyunwoo KIM ,  Sukkoo HONG ,  Yechan KIM ,  Juyoung KIM ,  Jinjoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  C07C381/12 ,  G03F7/039 ,  C07C309/12

Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.

公开(公告)号：US20210240078A1

公开(公告)日：2021-08-05

申请号：US17005636

申请日：2020-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sumin KIM ,  Hyunwoo KIM ,  Sukkoo HONG ,  Yechan KIM ,  Juyoung KIM ,  Jinjoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  C07C381/12 ,  C07C309/12 ,  G03F7/039

Abstract: A photo-decomposable compound includes an anion component including an adamantyl group and a cation component including a C5 to C40 cyclic hydrocarbon group and forming a complex with the anion component. At least one of the adamantyl group and the cyclic hydrocarbon group has a substituent, which decomposes by acid and generates an alkali soluble group. The substituent includes an acid-labile protecting group. A photoresist composition includes a chemically amplified polymer, the photo-decomposable compound, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed using the photoresist composition on a feature layer, a first area of the photoresist film is exposed to generate a plurality of acids from the photo-decomposable compound in the first area, the chemically amplified polymer is deprotected due to the plurality of acids, and the first area is removed to form a photoresist pattern.

公开(公告)号：US20240395862A1

公开(公告)日：2024-11-28

申请号：US18509925

申请日：2023-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungmin KIM ,  Yeonsook KIM ,  Yoon-Hee LEE ,  Yechan KIM

IPC: H01L29/06 ,  H01L23/48 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is a semiconductor device comprising: a semiconductor substrate; source/drain patterns spaced apart in a first direction on the semiconductor substrate; and channel patterns on the semiconductor substrate, wherein at least one of the channel patterns is between adjacent source/drain patterns among the source/drain patterns, wherein at least one of the channel patterns includes a plurality of semiconductor patterns, and the plurality of semiconductor patterns are spaced apart from each other in a second direction that is perpendicular to an upper surface of the semiconductor substrate, wherein the semiconductor substrate includes a {110} crystal plane, wherein at least one of the channel patterns includes a surface pattern, wherein the surface pattern includes first surfaces and second surfaces, wherein the first surfaces include protruding edges, wherein the second surfaces are respectively connected to the first surfaces through protruding edges, and wherein the protruding edges are arranged in a third direction.