公开(公告)号：US12183653B2

公开(公告)日：2024-12-31

申请号：US17726916

申请日：2022-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joungphil Lee ,  Myung-Sung Kang ,  Yeongseok Kim ,  Gwangsun Seo ,  Hyein Yoo ,  Yongwon Choi

IPC: H01L23/373 ,  C09J7/28 ,  C09J11/04 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/367 ,  H01L23/538

Abstract: An adhesive film includes a porous metal layer having a plurality of pores therein, a first adhesive layer on one side of the porous metal layer, an adhesive substance at least partially filling the pores of the porous metal layer, and a plurality of first thermal conductive members distributed in the first adhesive layer.

公开(公告)号：US11342310B2

公开(公告)日：2022-05-24

申请号：US17172478

申请日：2021-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongwon Choi ,  Wonkeun Kim ,  Inyoung Lee

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

Abstract: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

公开(公告)号：US11784168B2

公开(公告)日：2023-10-10

申请号：US17748164

申请日：2022-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongwon Choi ,  Wonkeun Kim ,  Inyoung Lee

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L24/06 ,  H01L25/50 ,  H01L2224/06517 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589

Abstract: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

公开(公告)号：US10910339B2

公开(公告)日：2021-02-02

申请号：US16533450

申请日：2019-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwail Jin ,  Yongwon Choi ,  Myung-Sung Kang ,  Yeongseok Kim ,  Wonkeun Kim

IPC: H01L23/00 ,  H01L21/78

Abstract: A flip chip bonding method includes obtaining a die including a first substrate and an adhesive layer on the first substrate; bonding the die to a second substrate different from the first substrate; and curing the adhesive layer. The curing the adhesive layer includes heating the second substrate to melt the adhesive layer, and providing the adhesive layer and the second substrate with air having pressure greater than atmospheric pressure.

公开(公告)号：US20220278079A1

公开(公告)日：2022-09-01

申请号：US17748164

申请日：2022-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongwon Choi ,  Wonkeun Kim ,  Inyoung Lee

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

公开(公告)号：US11355413B2

公开(公告)日：2022-06-07

申请号：US16540495

申请日：2019-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joungphil Lee ,  Myung-Sung Kang ,  Yeongseok Kim ,  Gwangsun Seo ,  Hyein Yoo ,  Yongwon Choi

IPC: C09J7/28 ,  C09J11/04 ,  H01L23/373 ,  H01L23/29 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L23/367

Abstract: An adhesive film includes a porous metal layer having a plurality of pores therein, a first adhesive layer on one side of the porous metal layer, an adhesive substance at least partially filling the pores of the porous metal layer, and a plurality of first thermal conductive members distributed in the first adhesive layer.

公开(公告)号：US20210384162A1

公开(公告)日：2021-12-09

申请号：US17172478

申请日：2021-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongwon Choi ,  Wonkeun Kim ,  Inyoung Lee

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.