SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR PACKAGE INCLUDING THE SEMICONDUCTOR CHIP

    公开(公告)号:US20220278079A1

    公开(公告)日:2022-09-01

    申请号:US17748164

    申请日:2022-05-19

    摘要: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

    SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR PACKAGE INCLUDING THE SEMICONDUCTOR CHIP

    公开(公告)号:US20210384162A1

    公开(公告)日:2021-12-09

    申请号:US17172478

    申请日:2021-02-10

    摘要: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

    Semiconductor chip, semiconductor device, and semiconductor package including the semiconductor chip

    公开(公告)号:US11342310B2

    公开(公告)日:2022-05-24

    申请号:US17172478

    申请日:2021-02-10

    摘要: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

    Flip chip bonding method
    9.
    发明授权

    公开(公告)号:US10910339B2

    公开(公告)日:2021-02-02

    申请号:US16533450

    申请日:2019-08-06

    IPC分类号: H01L23/00 H01L21/78

    摘要: A flip chip bonding method includes obtaining a die including a first substrate and an adhesive layer on the first substrate; bonding the die to a second substrate different from the first substrate; and curing the adhesive layer. The curing the adhesive layer includes heating the second substrate to melt the adhesive layer, and providing the adhesive layer and the second substrate with air having pressure greater than atmospheric pressure.