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公开(公告)号：US20210020438A1
公开(公告)日：2021-01-21
申请号：US16928560
申请日：2020-07-14
发明人： Kyung-Eun BYUN , Hyoungsub KIM , Taejin PARK , Hoijoon KIM , Hyeonjin SHIN , Wonsik AHN , Mirine LEEM , Yeonchoo CHO
IPC分类号： H01L21/02
摘要： A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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公开(公告)号：US20200347494A1
公开(公告)日：2020-11-05
申请号：US16861614
申请日：2020-04-29
发明人： Kyung-Eun BYUN , Hyoungsub KIM , Taejin PARK , Hyeonjin SHIN , Hoijoon KIM , Wonsik AHN , Mirine LEEM
摘要： Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.
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公开(公告)号：US20230024913A1
公开(公告)日：2023-01-26
申请号：US17949418
申请日：2022-09-21
发明人： Kyung-Eun BYUN , Hyoungsub KIM , Taejin PARK , Hoijoon KIM , Hyeonjin SHIN , Wonsik AHN , Mirine LEEM , Yeonchoo CHO
IPC分类号： H01L21/02
摘要： A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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公开(公告)号：US20230313365A1
公开(公告)日：2023-10-05
申请号：US18332638
申请日：2023-06-09
发明人： Kyung-Eun BYUN , Hyoungsub KIM , Taejin PARK , Hyeonjin SHIN , Hoijoon KIM , Wonsik AHN , Mirine LEEM
IPC分类号： C23C16/30 , B22F7/00 , C23C16/46 , C23C16/448 , C23C16/455 , H01L21/02 , H01L21/285 , H01L31/032
CPC分类号： C23C16/305 , B22F7/008 , C23C16/46 , C23C16/448 , C23C16/45502 , C23C16/45514 , H01L21/02568 , H01L21/02581 , H01L21/28568 , H01L31/0324 , B22F2207/01 , B22F2302/45
摘要： Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.
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公开(公告)号：US20230114347A1
公开(公告)日：2023-04-13
申请号：US18063909
申请日：2022-12-09
发明人： Changhyun KIM , Sang-Woo Kim , Kyung-Eun BYUN , Hyeonjin SHIN , Ahrum SOHN , Jaehwan JUNG
IPC分类号： H01L21/02
摘要： Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.
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公开(公告)号：US20220254643A1
公开(公告)日：2022-08-11
申请号：US17547626
申请日：2021-12-10
发明人： Kyung-Eun BYUN , Sangwoo KIM , Minsu SEOL , Hyeonjin SHIN , Minseok SHIN , Pin ZHAO , Taehyeong KIM , Jaehwan JUNG
IPC分类号： H01L21/308 , H01J37/34
摘要： A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.
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7.发明申请公开(公告)号：US20210300845A1
公开(公告)日：2021-09-30
申请号：US17211174
申请日：2021-03-24
发明人： Sangwon KIM , Changsik SONG , Juhyen LEE , Hyejin CHO , Hyeonjin SHIN , Minsu SEOL , Dongwook LEE
摘要： Provided are a functionalized polycyclic aromatic hydrocarbon compound and a light-emitting device including the same. The functionalized polycyclic aromatic hydrocarbon compound is structurally stable, and exhibits high light-emission characteristics since aggregation caused by π-π stacking is inhibited, and thus may have high efficiency and long lifespan characteristics.
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公开(公告)号：US20210074543A1
公开(公告)日：2021-03-11
申请号：US17012661
申请日：2020-09-04
发明人： Changhyun KIM , Sangwoo KIM , Kyung-Eun BYUN , Hyeonjin SHIN , Ahrum SOHN , Jaehwan JUNG
摘要： Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.
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公开(公告)号：US20210043452A1
公开(公告)日：2021-02-11
申请号：US16851675
申请日：2020-04-17
发明人： Changhyun KIM , Sang-Woo KIM , Kyung-Eun BYUN , Hyeonjin SHIN , Ahrum SOHN , Jaehwan JUNG
IPC分类号： H01L21/02
摘要： Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.
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10.发明申请公开(公告)号：US20190035635A1
公开(公告)日：2019-01-31
申请号：US16036113
申请日：2018-07-16
发明人： Sangwon KIM , Changsik SONG , Dongcheol JEONG , Minsu SEOL , Hyeonjin SHIN , Dongwook LEE , Taewoo KIM , Juhyen LEE , Hyejin CHO
IPC分类号： H01L21/308 , G03F7/004 , H01L21/311 , G03F7/16 , H01L29/16 , G03F7/027 , C07B37/12
摘要： Provided are a hardmask composition, a method of forming a pattern using the hardmask composition, and a hardmask formed using the hardmask composition. The hardmask composition includes a polar nonaqueous organic solvent and one of: i) a mixture of graphene quantum dots and at least one selected from a diene and a dienophile, ii) a Diels-Alder reaction product of the graphene quantum dots and the at least one selected from a diene and a dienophile, iii) a thermal treatment product of the Diels-Alder reaction product of graphene quantum dots and the at least one selected from a diene and a dienophile, or iv) a combination thereof.
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