公开(公告)号：US11652125B2

公开(公告)日：2023-05-16

申请号：US16997351

申请日：2020-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Bumsuk Kim ,  Eun Sub Shim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface with a pixel region having photoelectric conversion regions, a gate electrode disposed on the pixel region and adjacent to the first surface, a first isolation structure extending from the first surface toward the second surface, the first isolation structure comprising a first pixel isolation pattern enclosing the pixel region, and a first inner isolation pattern spaced apart from the first pixel isolation pattern and positioned between the photoelectric conversion regions, and a second isolation structure extending from the second surface toward the first surface with a top surface vertically spaced apart from at least a portion of a bottom surface of the first isolation structure. The bottom surface of the first isolation structure is closer to the second surface of the semiconductor substrate than to the first surface thereof.

公开(公告)号：US11469266B2

公开(公告)日：2022-10-11

申请号：US17037819

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim

IPC: H01L27/146 ,  H01L27/118

Abstract: An image sensor is provided comprising a substrate comprising first and second surfaces opposite to each other. A first isolation layer is disposed on the substrate and forms a boundary of a sensing region. A second isolation layer is disposed at least partially in the substrate within the sensing region and has a closed line shape. A photoelectric conversion device is disposed within the closed line shape of the second isolation layer, and a color filter is disposed on the first surface of the substrate.

公开(公告)号：US11375148B2

公开(公告)日：2022-06-28

申请号：US16730420

申请日：2019-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim ,  Kyung Ho Lee

IPC: H04N5/378 ,  H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

公开(公告)号：US11121157B2

公开(公告)日：2021-09-14

申请号：US16711987

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/369

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20230224607A1

公开(公告)日：2023-07-13

申请号：US18180904

申请日：2023-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim ,  Kyung Ho Lee

IPC: H04N5/335 ,  H01L27/146

CPC classification number: H04N25/75 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14603

Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.

公开(公告)号：US11575846B2

公开(公告)日：2023-02-07

申请号：US17370191

申请日：2021-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim

IPC: H04N5/353 ,  H04N5/341 ,  H04N5/355 ,  H04N5/357 ,  H04N5/3745

Abstract: An image sensor including: a pixel array including a plurality of pixels connected to a plurality of row lines and a plurality of column lines, each of the plurality of pixels including a photodiode for generating an electric charge in response to light, and a pixel circuit having a floating diffusion for storing the electric charge; and a controller configured to adjust a capacitance of the floating diffusion to a first value and obtain a first pixel signal from the pixel circuit during a first time period, adjust the capacitance of the floating diffusion to a second value greater than the first value and obtain a second pixel signal from the pixel circuit during a second time period subsequent to the first time period, and generate a result image using the first pixel signal and the second pixel signal.

公开(公告)号：US11082644B2

公开(公告)日：2021-08-03

申请号：US16674478

申请日：2019-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim

IPC: H04N5/353 ,  H04N5/341 ,  H04N5/355 ,  H04N5/357 ,  H04N5/3745

Abstract: An image sensor including: a pixel array including a plurality of pixels connected to a plurality of row lines and a plurality of column lines, each of the plurality of pixels including a photodiode for generating an electric charge in response to light, and a pixel circuit having a floating diffusion for storing the electric charge; and a controller configured to adjust a capacitance of the floating diffusion to a first value and obtain a first pixel signal from the pixel circuit during a first time period, adjust the capacitance of the floating diffusion to a second value greater than the first value and obtain a second pixel signal from the pixel circuit during a second time period subsequent to the first time period, and generate a result image using the first pixel signal and the second pixel signal.

公开(公告)号：US20180294297A1

公开(公告)日：2018-10-11

申请号：US15862013

申请日：2018-01-04

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N5/369 ,  H04N5/37457

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US12279058B2

公开(公告)日：2025-04-15

申请号：US18118307

申请日：2023-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim

IPC: H04N5/335 ,  H04N25/709 ,  H04N25/78

Abstract: An image sensor includes: a pixel including a boosting capacitor with one electrode connected to a first node to which a charge generated from a photoelectric element is transmitted, and outputting a pixel voltage based on the first node; a row driver outputting a reset-signal that resets the first node, a boosting control-signal applied to the other electrode, and a transmission-signal transmitting the charge to the first node; a read-out-circuit receiving the pixel voltage as a first-signal before the transmission-signal is output to the pixel, and receiving the pixel voltage as a second-signal after the transmission-signal is output to the pixel. A controller controlling the row driver to change the boosting control-signal from a first-level to a second-level lower than the first-level after changing the reset-signal from an enable to a disable, and controlling the read-out-circuit to receive the first-signal and the second-signal during which the boosting control-signal is at the second-level.

公开(公告)号：US12255212B2

公开(公告)日：2025-03-18

申请号：US17845547

申请日：2022-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taeyoung Song ,  Eun Sub Shim ,  Changhyun Park

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a pixel array of pixels arranged in a row and column directions. A first pixel provided in a first row of the pixel array includes a first sub-pixel connected with a first metal line, a second sub-pixel connected with a second metal line, a third sub-pixel connected with a third metal line, and a fourth sub-pixel connected with a fourth metal line. When a read-out operation is performed on the first pixel, signals applied to the first through fourth metal lines are sequentially enabled. Based on the applied signals, at least a part of charges accumulated in the first through fourth sub-pixels is diffused to a first floating diffusion node. The first sub-pixel and the third sub-pixel are adjacent in the column direction, and the first sub-pixel and the second sub-pixel are adjacent in the row direction.