公开(公告)号：US20180294297A1

公开(公告)日：2018-10-11

申请号：US15862013

申请日：2018-01-04

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N5/369 ,  H04N5/37457

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US12151617B2

公开(公告)日：2024-11-26

申请号：US17840033

申请日：2022-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook Lim ,  Young Gu Jin

IPC: H04N5/335 ,  B60R1/22 ,  H01L27/146

Abstract: A unit pixel includes a first photoelectric converter, a first transfer transistor disposed between to the first photoelectric converter and a first node, a connection transistor disposed between and connected to a second node and the first node, a second transfer transistor disposed between and connected to a third node and the second node, a second photoelectric converter connected to the third node, and a storage metal-oxide semiconductor (MOS) capacitor connected to the third node. The storage MOS capacitor stores charges from the second photoelectric converter. For a first time period, first charges accumulated in the first photoelectric converter are transferred to the first node, for a second time period, second charges accumulated in the first photoelectric converter are transferred to the first node and the second node, and for a third time period, third charges accumulated in the second photoelectric converter are transferred to the first to third nodes.

公开(公告)号：US11581344B2

公开(公告)日：2023-02-14

申请号：US17399282

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/374

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US11011559B2

公开(公告)日：2021-05-18

申请号：US16712020

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/357

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US10950639B2

公开(公告)日：2021-03-16

申请号：US16712039

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/357

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US10887536B2

公开(公告)日：2021-01-05

申请号：US16115987

申请日：2018-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook Lim ,  Eun Sub Shim ,  Kyung Ho Lee

IPC: H04N5/225 ,  H04N5/357 ,  H01L27/146 ,  H04N5/355 ,  H04N5/378

Abstract: An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.

公开(公告)号：US10573676B2

公开(公告)日：2020-02-25

申请号：US15862013

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US11917311B2

公开(公告)日：2024-02-27

申请号：US17743109

申请日：2022-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook Lim

IPC: H04N25/616 ,  H04N25/79 ,  H04N25/709 ,  H04N25/767 ,  H04N25/771 ,  H01L27/146 ,  H04N25/59

CPC classification number: H04N25/616 ,  H04N25/709 ,  H04N25/767 ,  H04N25/771 ,  H04N25/79 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14643 ,  H04N25/59

Abstract: An image sensor with improved image quality is provided. An image sensor includes a pixel array including a plurality of unit pixels. Each of the unit pixels includes a first photoelectric converter configured to convert received light into charges, a first transfer transistor electrically connected between the first photoelectric converter and a first node, a connection transistor disposed connected to a second node and the first node, a dual conversion transistor electrically connected between a third node and the second node, a second transfer transistor electrically connected between a fourth node and the third node, a second photoelectric converter electrically connected to the fourth node and configured to convert the received light into charges, a first switch electrically connected to the second photoelectric converter and the fourth node, a first capacitor electrically connected to the fourth node, and a electrically second capacitor connected to the third node.

公开(公告)号：US11121157B2

公开(公告)日：2021-09-14

申请号：US16711987

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/369

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US12289551B2

公开(公告)日：2025-04-29

申请号：US18068781

申请日：2022-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook Lim

IPC: H04N25/77 ,  H04N25/47 ,  H04N25/709

Abstract: A unit pixel includes a first photoelectric conversion unit configured to generate first charges in response to a first incident light, a first transfer transistor connected between the first photoelectric conversion unit and a first node, a connecting transistor connected between a second node and the first node, a second photoelectric conversion unit configured to generate second charges in response to a second incident light, a second transfer transistor connected between a second photoelectric conversion unit and a third node, a switch transistor connected between the third node and the second node, a source follower connected to the first node, a selection transistor connected to the source follower, an overflow transistor connecting the first photoelectric conversion unit and a power supply voltage, and a comparator configured to turn on the overflow transistor.