公开(公告)号：US11581344B2

公开(公告)日：2023-02-14

申请号：US17399282

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/374

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20180294297A1

公开(公告)日：2018-10-11

申请号：US15862013

申请日：2018-01-04

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N5/369 ,  H04N5/37457

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US11121157B2

公开(公告)日：2021-09-14

申请号：US16711987

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/369

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US11817465B2

公开(公告)日：2023-11-14

申请号：US18155785

申请日：2023-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N25/70 ,  H04N25/778

CPC classification number: H01L27/14605 ,  H01L27/14627 ,  H01L27/14641 ,  H04N25/70 ,  H04N25/778

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US20210375965A1

公开(公告)日：2021-12-02

申请号：US17399282

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US11011559B2

公开(公告)日：2021-05-18

申请号：US16712020

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/357

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US10950639B2

公开(公告)日：2021-03-16

申请号：US16712039

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/357

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

公开(公告)号：US10573676B2

公开(公告)日：2020-02-25

申请号：US15862013

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.