公开(公告)号：US5757038A

公开(公告)日：1998-05-26

申请号：US554558

申请日：1995-11-06

Applicant: Sandip Tiwari ,  Samuel Jonas Wind

Inventor： Sandip Tiwari ,  Samuel Jonas Wind

IPC: H01L21/336 ,  H01L29/786 ,  H01L31/0328 ,  H01L29/80 ,  H01L31/0336

CPC classification number: H01L29/7827 ,  B82Y10/00 ,  H01L29/66666 ,  H01L29/78609 ,  H01L29/78642 ,  H01L21/2815 ,  H01L29/42376 ,  H01L29/7613 ,  H01L29/775

Abstract: A dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in the range from 2.5 nm to 100 nm.

Abstract translation: 具有基本上均匀宽度的超薄通道的双栅场效应晶体管通过自对准工艺形成，其利用不同材料之间的选择性蚀刻或受控氧化形成在源区和漏区之间延伸的垂直沟道，其厚度范围为 2.5nm至100nm。

公开(公告)号：US5739057A

公开(公告)日：1998-04-14

申请号：US634342

申请日：1996-04-18

Applicant: Sandip Tiwari ,  Samuel Jonas Wind

Inventor： Sandip Tiwari ,  Samuel Jonas Wind

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/338

CPC classification number: H01L29/7827 ,  B82Y10/00 ,  H01L29/66666 ,  H01L29/78609 ,  H01L29/78642 ,  H01L21/2815 ,  H01L29/42376 ,  H01L29/7613 ,  H01L29/775

Abstract: A dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in the range from 2.5 nm to 100 nm.

Abstract translation: 具有基本上均匀宽度的超薄通道的双栅场效应晶体管通过自对准工艺形成，其利用不同材料之间的选择性蚀刻或受控氧化形成在源区和漏区之间延伸的垂直沟道，其厚度范围为 2.5nm至100nm。

公开(公告)号：US08168534B2

公开(公告)日：2012-05-01

申请号：US12945424

申请日：2010-11-12

Applicant: Jinyao Tang ,  Samuel Jonas Wind

Inventor： Jinyao Tang ,  Samuel Jonas Wind

IPC: H01L21/441 ,  H01L51/40

CPC classification number: H01L51/102 ,  H01L21/31683 ,  H01L51/0083 ,  H01L51/0545 ,  Y10S977/89 ,  Y10S977/893 ,  Y10T29/49117

Abstract: The present invention relates to methods for fabricating nanoscale electrodes separated by a nanogap, wherein the gap size may be controlled with high precision using a self-aligning aluminum oxide mask, such that the gap width depends upon the thickness of the aluminum oxide mask. The invention also provides methods for using the nanoscale electrodes.

Abstract translation: 本发明涉及用纳米隙分离的纳米尺度电极的制造方法，其中使用自对准氧化铝掩模可以高精度地控制间隙尺寸，使得间隙宽度取决于氧化铝掩模的厚度。 本发明还提供了使用纳米级电极的方法。

公开(公告)号：US09108850B2

公开(公告)日：2015-08-18

申请号：US13299875

申请日：2011-11-18

Applicant: Stephen O'Brien ,  Limin Huang ,  Brian Edward White ,  Samuel Jonas Wind

Inventor： Stephen O'Brien ,  Limin Huang ,  Brian Edward White ,  Samuel Jonas Wind

IPC: B05D3/02 ,  C01B31/02 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C01B31/0233 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/34 ,  C01B2202/36 ,  Y10T428/24802

Abstract: Apparatus and methods for forming the apparatus include nanoparticles, catalyst nanoparticles, carbon nanotubes generated from catalyst nanoparticles, and methods of fabrication of such nanoparticles and carbon nanotubes.

Abstract translation: 用于形成装置的装置和方法包括纳米颗粒，催化剂纳米颗粒，由催化剂纳米颗粒产生的碳纳米管，以及制备这种纳米颗粒和碳纳米管的方法。

公开(公告)号：US6035113A

公开(公告)日：2000-03-07

申请号：US002841

申请日：1998-01-05

Applicant: Porter Dean Gerber ,  Samuel Jonas Wind

Inventor： Porter Dean Gerber ,  Samuel Jonas Wind

IPC: H01J37/302 ,  G06F17/50

CPC classification number: H01J37/3023 ,  H01J2237/31769

Abstract: A method for formulating an exposure dose for an electron beam on a resist film for a pattern of geometric shapes which compensates for electron scattering effects utilizing hierarchial design data which is preserved to as great as an extent as possible in the computation of the exposure dose. The exposure dose is corrected for both the forward scatter and backscatter effects of the electron beam in which the design data is modified for interactions of shapes which are affected only over the forward scatter range. In another version of the method, a multiple Gaussian approximation is used where the short term Gaussian terms are treated as the forward scatter terms and the long term Gaussian terms are treated as the back scatter terms.

Abstract translation: 用于在抗蚀剂膜上形成用于几何形状图案的电子束的曝光剂量的方法，其利用在计算曝光剂量时尽可能地保持尽可能大的程度的层次设计数据来补偿电子散射效应。 电子束的前向散射和反向散射效应的曝光剂量被校正，其中设计数据被修改用于仅在前向散射范围内影响的形状的相互作用。 在该方法的另一个版本中，使用多高斯近似，其中短期高斯项被视为前向散射项，长期高斯项被视为后向散射项。

公开(公告)号：US20110268884A1

公开(公告)日：2011-11-03

申请号：US13098957

申请日：2011-05-02

Applicant: Samuel Jonas Wind ,  Jinyao Tang ,  James C. Hone ,  Yuyao Shan

Inventor： Samuel Jonas Wind ,  Jinyao Tang ,  James C. Hone ,  Yuyao Shan

IPC: B05D3/14 ,  B82Y40/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/102

Abstract: A first single-wall carbon nanotube can be electrically coupled to a first electrode, and a second single-wall carbon nanotube electrically coupled to a second electrode. In an example, the first and second single-wall carbon nanotubes are laterally separated by a nanoscale gap, such as sized and shaped for insertion of a single molecule.

Abstract translation: 第一单壁碳纳米管可以电耦合到第一电极和电耦合到第二电极的第二单壁碳纳米管。 在一个实例中，第一和第二单壁碳纳米管被纳米级间隙横向分开，例如尺寸和形状以插入单个分子。

公开(公告)号：US20110111178A1

公开(公告)日：2011-05-12

申请号：US12936025

申请日：2009-04-02

Applicant: Samuel Jonas Wind ,  Michael P. Sheetz ,  Teresa Anne Fazio

Inventor： Samuel Jonas Wind ,  Michael P. Sheetz ,  Teresa Anne Fazio

IPC: B32B3/30 ,  G21G5/00

CPC classification number: C08J7/123 ,  C08J2383/04 ,  Y10T428/24595

Abstract: In various embodiments, the properties of a cross-linkable polymer can be changed by modifying the degree of cross-linking. The degree of cross-linking can be modified on a localized basis using lithographic patterns in which the cross-linkable polymer can be selectively and controllably subjected to charged particles or electromagnetic radiation. The modification of the degree of cross-linking can be applied to substrates having surfaces with varying geometric forms.

Abstract translation: 在各种实施方案中，可交联聚合物的性质可以通过改变交联度来改变。 可以使用其中可交联聚合物可选择性且可控地经受带电粒子或电磁辐射的光刻图案在局部基础上修饰交联度。 交联度的改进可以应用于具有不同几何形状的表面的基材。