ANTENNA DEVICE OF MOBILE TERMINAL
    1.
    发明申请
    ANTENNA DEVICE OF MOBILE TERMINAL 有权
    天线手机终端

    公开(公告)号:US20120212378A1

    公开(公告)日:2012-08-23

    申请号:US13458453

    申请日:2012-04-27

    IPC分类号: H01Q1/24

    摘要: An antenna device of a mobile terminal that can secure radiation performance is provided. The antenna device having a battery cover composed of a metal material includes a radiation unit for transmitting and receiving a signal, a feeding unit formed at an end portion of a first side of the radiation unit for electrically connecting the radiation unit to a Printed Circuit Board (PCB), and a ground part disposed a predetermined distance from the feeding unit and formed at a second side of the radiation unit. When the battery cover is fastened to the mobile terminal, the ground part contacts a first side of the battery cover.

    摘要翻译: 提供了可以确保辐射性能的移动终端的天线装置。 具有由金属材料构成的电池盖的天线装置包括用于发送和接收信号的辐射单元,形成在辐射单元的第一侧的端部处的馈电单元,用于将辐射单元电连接到印刷电路板 (PCB),以及配置在距离供电单元预定距离并形成在辐射单元的第二侧的接地部分。 当电池盖固定到移动终端时,接地部分接触电池盖的第一侧。

    ANTENNA DEVICE OF MOBILE TERMINAL
    2.
    发明申请
    ANTENNA DEVICE OF MOBILE TERMINAL 有权
    天线手机终端

    公开(公告)号:US20090315789A1

    公开(公告)日:2009-12-24

    申请号:US12489044

    申请日:2009-06-22

    IPC分类号: H01Q1/48 H01Q1/24

    摘要: An antenna device of a mobile terminal that can secure radiation performance is provided. The antenna device having a battery cover composed of a metal material includes a radiation unit for transmitting and receiving a signal, a feeding unit formed at an end portion of a first side of the radiation unit for electrically connecting the radiation unit to a Printed Circuit Board (PCB), and a ground part disposed a predetermined distance from the feeding unit and formed at a second side of the radiation unit. When the battery cover is fastened to the mobile terminal, the ground part contacts a first side of the battery cover.

    摘要翻译: 提供了可以确保辐射性能的移动终端的天线装置。 具有由金属材料构成的电池盖的天线装置包括用于发送和接收信号的辐射单元,形成在辐射单元的第一侧的端部处的馈电单元,用于将辐射单元电连接到印刷电路板 (PCB),以及配置在距离供电单元预定距离并形成在辐射单元的第二侧的接地部分。 当电池盖固定到移动终端时,接地部分接触电池盖的第一侧。

    MOBILE TERMINAL HAVING METAL CASE AND ANTENNA STRUCTURE
    3.
    发明申请
    MOBILE TERMINAL HAVING METAL CASE AND ANTENNA STRUCTURE 有权
    具有金属外壳和天线结构的移动终端

    公开(公告)号:US20090278757A1

    公开(公告)日:2009-11-12

    申请号:US12419503

    申请日:2009-04-07

    IPC分类号: H01Q13/10

    CPC分类号: H01Q1/243 H01Q13/106

    摘要: A mobile terminal including a metal case and an antenna structure that can exhibit optimum radiation performance is provided. The antenna structure includes an antenna having a radiation unit for transmitting and for receiving electric waves, a Printed Circuit Board (PCB) to which the antenna is mechanically coupled at one surface thereof and having a power supply unit electrically coupled to the radiation unit, and a case constructed using a metal material within which the PCB is disposed, wherein the case has at least one slot formed in a surface thereof opposite to the surface to which the PCB is fastened and adjacent to the radiation unit.

    摘要翻译: 提供一种包括金属外壳和能够呈现最佳辐射性能的天线结构的移动终端。 天线结构包括具有用于发送和接收电波的辐射单元的天线,天线在其一个表面机械耦合并具有电耦合到辐射单元的电源单元的印刷电路板(PCB),以及 使用其中布置有PCB的金属材料构造的壳体,其中所述壳体具有形成在其与所述PCB被紧固并邻近所述辐射单元的表面相对的表面中的至少一个槽。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20130105875A1

    公开(公告)日:2013-05-02

    申请号:US13447034

    申请日:2012-04-13

    申请人: Seung Hwan KIM

    发明人: Seung Hwan KIM

    IPC分类号: H01L27/108

    摘要: A semiconductor device and a method for fabricating the same are provided to enable a bit line to be formed easily, increase a bit line process margin and reduce capacitance between the adjacent bit lines. The semiconductor device comprises: a first pillar and a second pillar each extended vertically from a semiconductor substrate and including a vertical channel region; a first bit line located in the lower portion of the vertical channel region inside the first pillar and the second pillar; and an interlayer insulating film located between the first pillar and the second pillar that include the first bit line.

    摘要翻译: 提供一种半导体器件及其制造方法,以便能够容易地形成位线,增加位线处理余量并减小相邻位线之间的电容。 半导体器件包括:第一柱和第二柱,每个第一柱和第二柱各自从半导体衬底垂直延伸并且包括垂直沟道区; 位于所述第一柱和所述第二柱内的所述垂直沟道区的下部的第一位线; 以及位于包括第一位线的第一柱和第二柱之间的层间绝缘膜。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
    半导体器件及其制造方法

    公开(公告)号:US20120025296A1

    公开(公告)日:2012-02-02

    申请号:US12969537

    申请日:2010-12-15

    申请人: Seung Hwan KIM

    发明人: Seung Hwan KIM

    IPC分类号: H01L27/108 H01L21/28

    CPC分类号: H01L27/10826 H01L27/10885

    摘要: A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing the semiconductor device comprises: forming a plurality of first pillar patterns each of which includes a sidewall contact by selectively etching a semiconductor substrate; forming a buried bit line at a lower portion of a region between two neighboring first pillar patterns; forming a plurality of second pillar patterns by selectively etching upper portions of the first pillar patterns; and forming a gate coupling second pillar patterns arranged in a direction crossing the bit line, the gate enclosing the second pillar patterns.

    摘要翻译: 公开了一种半导体器件及其制造方法。 制造半导体器件的方法包括:通过选择性蚀刻半导体衬底,形成多个第一柱状图案,每个第一柱状图案包括侧壁接触; 在两个相邻的第一柱状图案之间的区域的下部形成掩埋位线; 通过选择性地蚀刻第一柱图案的上部来形成多个第二柱图案; 以及形成沿与所述位线交叉的方向布置的栅极耦合第二柱状图案,所述栅极包围所述第二柱状图案。

    APPARATUS FOR MATCHING GIGABIT ETHERNET (GbE) SIGNALS WITH OPTICAL TRANSPORT HIERARCHY (OTH)
    7.
    发明申请
    APPARATUS FOR MATCHING GIGABIT ETHERNET (GbE) SIGNALS WITH OPTICAL TRANSPORT HIERARCHY (OTH) 失效
    用于匹配光纤传输层级(OTH)的千兆以太网(GbE)信号的装置

    公开(公告)号:US20090154479A1

    公开(公告)日:2009-06-18

    申请号:US12184468

    申请日:2008-08-01

    IPC分类号: H04L12/56

    CPC分类号: H04L12/413

    摘要: Provided is an apparatus for matching Gigabit Ethernet (GbE) signals to an Optical Transport Hierarchy (OTH). The apparatus real-time records a source address and input port information of GbE Ethernet frames in a memory, compares a destination address of the Ethernet frame which is a payload of a GFP frame with memory table information, searches an output port location of the GbE, and interreceives GbE frames and Generic Frame Procedure (GFP) frames by multiplexing/demultiplexing.

    摘要翻译: 提供了一种用于将千兆以太网(GbE)信号与光传送层级(OTH)相匹配的装置。 该装置实时记录存储器中的GbE以太网帧的源地址和输入端口信息,将作为GFP帧的有效载荷的以太网帧的目的地地址与存储器表信息进行比较,搜索GbE的输出端口位置 ,并通过复用/解复用来互连GbE帧和通用帧过程(GFP)帧。

    SEMICONDUCTOR CELL AND SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR CELL AND SEMICONDUCTOR DEVICE 有权
    半导体单元和半导体器件

    公开(公告)号:US20120300557A1

    公开(公告)日:2012-11-29

    申请号:US13327458

    申请日:2011-12-15

    申请人: Seung Hwan KIM

    发明人: Seung Hwan KIM

    摘要: A technology is a semiconductor cell and a semiconductor device capable of reducing the coupling capacitance between adjacent bit lines by forming a bit line junction region in a separated island shape when forming a buried bit line, thereby improving characteristics of the semiconductor devices. The semiconductor cell includes a transistor including a gate and a gate junction region, a plurality of buried bit lines disposed to intersect the gate, and a plurality of bit line junction regions, each bit line junction region having an island shape formed between the buried bit lines and connected to the buried bit line.

    摘要翻译: 一种技术是通过在形成掩埋位线时形成分离岛形状的位线结区域,能够减小相邻位线之间的耦合电容,从而提高半导体器件的特性的半导体单元和半导体器件。 半导体单元包括晶体管,其包括栅极和栅极结区域,与栅极交叉设置的多个埋入位线以及多个位线结区域,每个位线结区域形成在掩埋位之间 线并连接到埋地线。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20120135586A1

    公开(公告)日:2012-05-31

    申请号:US13187175

    申请日:2011-07-20

    申请人: Seung Hwan KIM

    发明人: Seung Hwan KIM

    摘要: A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a conductive pattern between the silicon line patterns, forming a spacer over the substrate, forming an interlayer insulating layer between the silicon line patterns, removing the spacer on one side of the silicon line patterns to expose the conductive pattern, forming a bit line contact open region by removing the interlayer insulating layer, forming a polysilicon pattern to cover the bit line contact open region, and forming a junction region diffused to the silicon line pattern through the bit line contact open region. Thereby, a stacked structure of a titanium layer and a polysilicon layer are stably formed when forming a buried bit line and a bit line contact is formed using diffusion of the polysilicon layer to prevent leakage current.

    摘要翻译: 一种制造半导体器件的方法包括在半导体衬底中形成硅线图案,在硅线图形上形成绝缘层,在硅线图案之间形成导电图案,在衬底之上形成间隔物,在衬底之间形成层间绝缘层, 硅线图案,去除硅线图案一侧上的间隔物以暴露导电图案,通过去除层间绝缘层形成位线接触开放区域,形成覆盖位线接触开放区域的多晶硅图案,以及 通过位线接触开口区域形成扩散到硅线图形的结区域。 由此,当形成掩埋位线时,稳定地形成钛层和多晶硅层的堆叠结构,并且通过多晶硅层的扩散形成位线接触以防止漏电流。