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153 条记录 (耗时 0.023 秒)

    Semiconductor device and method for fabricating the same
    2.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09214468B2

    公开(公告)日：2015-12-15

    申请号：US13447034

    申请日：2012-04-13

    申请人： Seung Hwan Kim

    发明人： Seung Hwan Kim

    IPC分类号： H01L21/28 ,  H01L27/108 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

    CPC分类号： H01L27/10876 ,  H01L27/10823 ,  H01L27/10885 ,  H01L29/41741 ,  H01L29/456 ,  H01L29/66666 ,  H01L29/7827

    摘要： A semiconductor device and a method for fabricating the same are provided to enable a bit line to be formed easily, increase a bit line process margin and reduce capacitance between the adjacent bit lines. The semiconductor device comprises: a first pillar and a second pillar each extended vertically from a semiconductor substrate and including a vertical channel region; a first bit line located in the lower portion of the vertical channel region inside the first pillar and the second pillar; and an interlayer insulating film located between the first pillar and the second pillar that include the first bit line.

    摘要翻译： 提供一种半导体器件及其制造方法，以便能够容易地形成位线，增加位线处理余量并减小相邻位线之间的电容。 半导体器件包括：第一柱和第二柱，每个第一柱和第二柱各自从半导体衬底垂直延伸并且包括垂直沟道区; 位于所述第一柱和所述第二柱内的所述垂直沟道区的下部的第一位线; 以及位于包括第一位线的第一柱和第二柱之间的层间绝缘膜。

    Smart card-based browsing system and smart card-based browsing method and smart card for the same
    4.
    发明授权
    Smart card-based browsing system and smart card-based browsing method and smart card for the same 有权
    基于智能卡的浏览系统和基于智能卡的浏览方式和智能卡相同

    公开(公告)号：US08579202B2

    公开(公告)日：2013-11-12

    申请号：US13128850

    申请日：2010-07-08

    申请人： Seung Hwan Kim

    发明人： Seung Hwan Kim

    IPC分类号： G06K19/06

    CPC分类号： G06F9/54 ,  G06F17/30861 ,  H04L67/02

    摘要： Disclosed are a smart card-based browsing system, a smart card-based browsing method, and smart card for the same. A browser is installed in the smart card to form a direct connection path with an SCWS installed in the smart card. The number of sockets for HTTP request/response required to be as many as the number of contents for services between the smart card and the user terminal is reduced, so that the services can be smoothly provided through a rapid and effective interface. A web service can be provided to various multimedia appliances compatible with the smart card regardless of the existence of the browser on the user terminal and the type and version of the browser.

    摘要翻译： 公开了基于智能卡的浏览系统，基于智能卡的浏览方法和用于其的智能卡。 智能卡中安装了浏览器，以形成与智能卡中安装的SCWS的直接连接路径。 用于HTTP请求/响应的套接字的数量减少到与智能卡和用户终端之间的服务的内容数量一样多，从而可以通过快速有效的界面平滑地提供服务。 可以将web服务提供给与智能卡兼容的各种多媒体设备，而不管用户终端上是否存在浏览器以及浏览器的类型和版本。

    HIGH THROUGHPUT BINARIZATION (HTB) METHOD FOR CABAC IN HEVC
    5.
    发明申请
    HIGH THROUGHPUT BINARIZATION (HTB) METHOD FOR CABAC IN HEVC 有权
    HEV中CABAC的高通量分化（HTB）方法

    公开(公告)号：US20130188734A1

    公开(公告)日：2013-07-25

    申请号：US13354272

    申请日：2012-01-19

    申请人： Seung-Hwan Kim ,  Kiran Misra ,  Louis Joseph Kerofsky ,  Christopher A. Segall

    发明人： Seung-Hwan Kim ,  Kiran Misra ,  Louis Joseph Kerofsky ,  Christopher A. Segall

    IPC分类号： H04N7/64 ,  H03M7/34 ,  H04N7/26 ,  H03M7/30

    CPC分类号： H03M7/4018 ,  H04N19/13 ,  H04N19/21 ,  H04N19/91

    摘要： An electronic device configured for high throughput binarization mode is described. The electronic device includes a processor and instructions stored in memory that is in electronic communication with the processor. The electronic device obtains a block of transformed and quantized coefficients (TCQs). The electronic device determines whether a high throughput binarization mode condition is met. If the condition is met, the electronic device uses the high throughput binarization mode to process the block. If the condition is not met, the electronic device does not use the high throughput binarization mode to process the block. The electronic device transmits the generated first or second bitstream to a decoder.

    摘要翻译： 描述了配置用于高吞吐量二值化模式的电子设备。 电子设备包括处理器和存储在与处理器电子通信的存储器中的指令。 电子设备获得变换和量化系数块（TCQ）。 电子设备确定是否满足高吞吐量二值化模式条件。 如果满足条件，电子设备使用高吞吐量二值化模式来处理该块。 如果不满足条件，则电子设备不使用高吞吐量二值化模式来处理该块。 电子设备将生成的第一或第二比特流发送到解码器。

    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130105875A1

    公开(公告)日：2013-05-02

    申请号：US13447034

    申请日：2012-04-13

    申请人： Seung Hwan KIM

    发明人： Seung Hwan KIM

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10876 ,  H01L27/10823 ,  H01L27/10885 ,  H01L29/41741 ,  H01L29/456 ,  H01L29/66666 ,  H01L29/7827

    摘要： A semiconductor device and a method for fabricating the same are provided to enable a bit line to be formed easily, increase a bit line process margin and reduce capacitance between the adjacent bit lines. The semiconductor device comprises: a first pillar and a second pillar each extended vertically from a semiconductor substrate and including a vertical channel region; a first bit line located in the lower portion of the vertical channel region inside the first pillar and the second pillar; and an interlayer insulating film located between the first pillar and the second pillar that include the first bit line.

    摘要翻译： 提供一种半导体器件及其制造方法，以便能够容易地形成位线，增加位线处理余量并减小相邻位线之间的电容。 半导体器件包括：第一柱和第二柱，每个第一柱和第二柱各自从半导体衬底垂直延伸并且包括垂直沟道区; 位于所述第一柱和所述第二柱内的所述垂直沟道区的下部的第一位线; 以及位于包括第一位线的第一柱和第二柱之间的层间绝缘膜。

    APPARATUS FOR ADJUSTING POLARIZATION CHARACTERISTICS, AND ULTRA-SHORT ULTRA-HIGH INTENSITY PULSE LASER GENERATOR COMPRISING SAME
    8.
    发明申请
    APPARATUS FOR ADJUSTING POLARIZATION CHARACTERISTICS, AND ULTRA-SHORT ULTRA-HIGH INTENSITY PULSE LASER GENERATOR COMPRISING SAME 有权
    用于调整偏振特性的装置和包含其的超高强度脉冲激光发生器

    公开(公告)号：US20130003763A1

    公开(公告)日：2013-01-03

    申请号：US13634540

    申请日：2011-03-11

    申请人： Nam-Soo Myung ,  Seung-Hwan Kim

    发明人： Nam-Soo Myung ,  Seung-Hwan Kim

    IPC分类号： H01S3/10

    CPC分类号： H01S3/00 ,  H01S3/0014 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/0085 ,  H01S3/08054 ,  H01S3/10 ,  H01S3/10061 ,  H01S3/1301 ,  H01S3/1308 ,  H01S3/2366 ,  H01S3/2383

    摘要： The present invention relates to an apparatus for generating an ultra-short ultra-high intensity pulse laser, comprising: a pulse laser providing unit which generates an ultra-short ultra-high intensity pulse laser, stretches pulse width, then selects and provides only a pulse laser having a predetermined polarizing angle; a polarization characteristic adjusting unit which divides the pulse laser provided by the pulse laser providing unit into S-polarizing component light and P-polarizing component light, varies the phase difference and amplitude difference between the S-polarizing component light and the P-polarizing component light, and combines the two types of light to generate a pulse laser with varied polarization characteristics; and a pulse compression unit which compresses the pulse width of the pulse laser, the polarization characteristics of which are varied by the polarization characteristic adjusting unit, and outputs the pulse laser.

    摘要翻译： 本发明涉及一种用于产生超短超高强度脉冲激光器的装置，包括：脉冲激光提供单元，其生成超短超高强度脉冲激光器，延伸脉冲宽度，然后选择并提供一个 具有预定偏振角的脉冲激光; 将由脉冲激光提供单元提供的脉冲激光分割为S偏振分量光和P偏振分量光的偏振特性调整单元改变S偏振分量光和P偏振分量之间的相位差和振幅差 并组合两种类型的光以产生具有变化的偏振特性的脉冲激光; 以及脉冲压缩单元，其压缩脉冲激光器的脉冲宽度，其偏振特性由偏振特性调整单元改变，并输出脉冲激光器。