摘要:
In a method of estimating a PSF in the electron-beam lithography process, a linear resist test pattern may be formed on a substrate. A line response function (LRF) may be determined using a cross-sectional profile of the linear resist test pattern. A development rate distribution in a first direction, the first direction may be substantially perpendicular to an extending direction of the linear resist test pattern, may be calculated using the LRF. A line spread function (LSF), which may represent an exposure distribution in the first direction, may be calculated using the development rate distribution. The PSF may be estimated using the LSF.
摘要:
A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.
摘要:
A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.
摘要:
A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.
摘要:
A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.
摘要:
A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.
摘要:
Systems, apparatus and methods are described including determining a first value by reducing a bit-length of a reference pixel value and adding a first predetermined value to the result and determining a second value by subtracting a residual pixel value from a current pixel value to generate a difference value, reducing a bit-length of the difference value and adding the first predetermined value to the result. The range of the second value may then be clipped by setting the second value to zero when the second value is equal to or less than a second predetermined value and setting the second value to a third predetermined value when the second value is equal to or greater than a fourth predetermined value. The first value and the second value may then be used for inter-layer residual prediction in Scalable Video Coding (SVC) systems.
摘要:
A shield cover for a braided wire shield that is capable of securely fixing a braided wire to a shield member through a single pressing operation. The shield cover having a mating end, an inner casing, an outer cover housing. and a securing section. The inner casing positioned at an end opposite the mating end and having a shield receiving passageway. The outer cover housing positioned at the mating end of the shield cover and forming a connector receiving passageway being wider than the shield receiving passageway. The securing section extends from the inner casing toward the mating end and positioned apart from the outer cover housing.
摘要:
A shield cover for a braided wire shield that is capable of securely fixing a braided wire to a shield member through a single pressing operation. The shield cover having a mating end, an inner casing, an outer cover housing. and a securing section. The inner casing positioned at an end opposite the mating end and having a shield receiving passageway. The outer cover housing positioned at the mating end of the shield cover and forming a connector receiving passageway being wider than the shield receiving passageway. The securing section extends from the inner casing toward the mating end and positioned apart from the outer cover housing.
摘要:
A liquid crystal display (LCD) including: a display panel; a backlight unit to radiate light to the display panel; a mold frame surrounding the backlight unit and supporting the display panel; a housing to receive the display panel, backlight unit, and mold frame; and a resin unit provided between the display panel and the housing. A receiving groove is formed below the resin unit, by sloped surfaces of the mold frame and side walls of the housing.