公开(公告)号：US20130143150A1

公开(公告)日：2013-06-06

申请号：US13571043

申请日：2012-08-09

Applicant: JIN CHOI ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

Inventor： JIN CHOI ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

IPC: G03F1/44

CPC classification number: G03F1/44

Abstract: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

Abstract translation: 光掩模的制造方法包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成缺陷检测图案。 缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案，并且在与第一方向不同的第二方向上延伸。 使用由同一放大器衍射的电子束（e-beam）形成第一图案和第二图案。

公开(公告)号：US20100266959A1

公开(公告)日：2010-10-21

申请号：US12662402

申请日：2010-04-15

Applicant: Sang-Hee Lee ,  Jin Choi ,  Byung-Gook Kim ,  Hee-Bom Kim

Inventor： Sang-Hee Lee ,  Jin Choi ,  Byung-Gook Kim ,  Hee-Bom Kim

IPC: G03F7/20

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/0451 ,  H01J2237/0458 ,  H01J2237/15 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.

Abstract translation: 图案形成方法包括提供抗蚀剂，将第一电子束照射到抗蚀剂的第一区域，并且将第二电子束照射到沿着抗蚀剂的第一区域的边界限定的第二区域，其中第一电子 梁具有具有多边形形状的第一横截面，并且第二电子束具有具有多边形形状的第二横截面。

公开(公告)号：US08673522B2

公开(公告)日：2014-03-18

申请号：US13571043

申请日：2012-08-09

Applicant: Jin Choi ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

Inventor： Jin Choi ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

IPC: G03F1/38

CPC classification number: G03F1/44

Abstract: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

Abstract translation: 光掩模的制造方法包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成缺陷检测图案。 缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案，并且在与第一方向不同的第二方向上延伸。 使用由同一放大器衍射的电子束（e-beam）形成第一图案和第二图案。

公开(公告)号：US08329381B2

公开(公告)日：2012-12-11

申请号：US13399090

申请日：2012-02-17

Applicant: Jin Choi ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

Inventor： Jin Choi ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

IPC: G03C5/00

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

Abstract: A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.

Abstract translation: 图案形成方法包括：提供具有第一孔的第一掩模，通过照射通过第一孔的第一电子束，在抗蚀剂上形成第一转印图案，第一转印图案沿着第一方向延伸并沿着其圆周具有边界 并且所述第一电子束在从所述第一孔出射时具有第一正方形的横截面，并且通过照射通过所述第一孔的第二电子束在所述抗蚀剂上形成第二转移图案，所述第二转移图案沿所述第一方向延伸 并且当从第一孔径出现时，与第一转印图案的边界的一部分重叠，并且第二电子束具有第二正方形的横截面。

公开(公告)号：US20120148959A1

公开(公告)日：2012-06-14

申请号：US13399090

申请日：2012-02-17

Applicant: Jin CHOI ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

Inventor： Jin CHOI ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Sang-Hee Lee

IPC: G03F7/22 ,  G03F7/20

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

Abstract: A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.

Abstract translation: 图案形成方法包括：提供具有第一孔的第一掩模，通过照射通过第一孔的第一电子束，在抗蚀剂上形成第一转印图案，第一转印图案沿着第一方向延伸并沿着其圆周具有边界 并且所述第一电子束在从所述第一孔出射时具有第一正方形的横截面，并且通过照射通过所述第一孔的第二电子束在所述抗蚀剂上形成第二转移图案，所述第二转移图案沿所述第一方向延伸 并且当从第一孔径出现时，与第一转印图案的边界的一部分重叠，并且第二电子束具有第二正方形的横截面。

公开(公告)号：US20120314198A1

公开(公告)日：2012-12-13

申请号：US13486064

申请日：2012-06-01

Applicant: Sang-Hee Lee ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Soo-Young Lee ,  Qing Dai

Inventor： Sang-Hee Lee ,  Byung-Gook Kim ,  Hee-Bom Kim ,  Soo-Young Lee ,  Qing Dai

IPC: G03B27/32

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31769

Abstract: In a method of estimating a PSF in the electron-beam lithography process, a linear resist test pattern may be formed on a substrate. A line response function (LRF) may be determined using a cross-sectional profile of the linear resist test pattern. A development rate distribution in a first direction, the first direction may be substantially perpendicular to an extending direction of the linear resist test pattern, may be calculated using the LRF. A line spread function (LSF), which may represent an exposure distribution in the first direction, may be calculated using the development rate distribution. The PSF may be estimated using the LSF.

Abstract translation: 在电子束光刻工艺中估计PSF的方法中，可以在衬底上形成线性抗蚀剂测试图案。 线路响应函数（LRF）可以使用线性抗蚀剂测试图案的横截面轮廓来确定。 可以使用LRF计算第一方向上的显影速率分布，第一方向可以基本上垂直于线性抗蚀剂测试图案的延伸方向。 可以使用开发速率分布来计算可以表示第一方向上的曝光分布的线扩展函数（LSF）。 可以使用LSF估计PSF。

公开(公告)号：US20100111427A1

公开(公告)日：2010-05-06

申请号：US12607238

申请日：2009-10-28

Applicant: Hee-Bom Kim ,  Myoung-Soo Lee ,  Young-Su Sung

Inventor： Hee-Bom Kim ,  Myoung-Soo Lee ,  Young-Su Sung

IPC: G06K9/68

CPC classification number: G06T7/0006 ,  G03F1/86 ,  G03F7/70625 ,  G06T2207/30148

Abstract: A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.

Abstract translation: 用于检查光掩模图案的CD（CD）的均匀性的方法提高了产量。 该方法通过使用电子显微镜精确测量光掩模来获得CD。 然后，通过光学显微镜高速拍摄光掩模，获得具有形成在光掩模中的多个图案的测量图像。 当测量图像的开放密度相对较低时，通过仅捕获测量图像中的图案区域来计算基于CD的灰度级，并且获得估计值和相关系数。 因此，对于具有较低开放密度的测量图像的高速测量，可以更清楚地确认CD的均匀性。

公开(公告)号：US07745068B2

公开(公告)日：2010-06-29

申请号：US11446980

申请日：2006-06-06

Applicant: Jin-Sik Jung ,  Hee-Bom Kim ,  Woo-Sung Han ,  Sung-Min Huh

Inventor： Jin-Sik Jung ,  Hee-Bom Kim ,  Woo-Sung Han ,  Sung-Min Huh

IPC: G03F1/14

CPC classification number: G03F1/29

Abstract: A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

Abstract translation: 提供了具有改进的分辨率的二进制光掩模及其制造方法。 二元光掩模可以包括基板，形成在基板上以限定电路图案的传输防止图案，以及补偿层，其被配置为基于补偿层的拓扑来改变透射二进制光掩模的光，并布置在透射 - 防止层和/或基板。

公开(公告)号：US20080145771A1

公开(公告)日：2008-06-19

申请号：US12002275

申请日：2007-12-13

Applicant: Gi-Sung Yoon ,  Hee-Bom Kim ,  Sun-Young Choi

Inventor： Gi-Sung Yoon ,  Hee-Bom Kim ,  Sun-Young Choi

IPC: G03F1/00

CPC classification number: G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80

Abstract: In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes. Accordingly, the intensity deviation between 0th and 1st order beams may be decreased, to thereby improve the processing margin of the exposure process.

Abstract translation: 在衰减相移掩模（PSM）及其形成方法中，相移层和遮光层依次层叠在透明基板上。 从基板顺序地移除相移层和遮光层，以形成包括第一开口和相移图案的遮光图案，该图案包括连接到第一开口的第二开口，并且部分地曝光 透明基板。 然后，通过部分去除遮光图案，通过遮光图案形成发送部。 发射部分包括形成有透射率控制器的相移图案的至少一部分。 在一个实施例中，透射率控制器包括具有高吸收系数的金属，并且通过溅射和扩散工艺形成。 因此，可以减小第0和第1级次级光束之间的强度偏差，从而改善曝光处理的处理余量。

公开(公告)号：US20070125948A1

公开(公告)日：2007-06-07

申请号：US11434142

申请日：2006-05-16

Applicant: Yo-Han Choi ,  Hee-Bom Kim

Inventor： Yo-Han Choi ,  Hee-Bom Kim

IPC: G21K7/00

CPC classification number: H01J37/265 ,  H01J37/222 ,  H01J2237/221 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2485 ,  H01J2237/2817

Abstract: A method and apparatus for measuring a critical dimension (CD) are provided. Image data of a measurement pattern are generated. The measurement pattern may include a first surface and a second surface facing each other. The image data may include a first side and a second side corresponding to the first surface and the second surface of the measurement pattern, respectively. The image data may be edited to increase an overlap length of the first and second sides. A measurement window crossing the first and second sides in the edited image data is set. A distance between the first and second sides in the measurement window is measured.

Abstract translation: 提供了一种用于测量临界尺寸（CD）的方法和装置。 产生测量图案的图像数据。 测量图案可以包括彼此面对的第一表面和第二表面。 图像数据可以分别包括对应于测量图案的第一表面和第二表面的第一侧和第二侧。 可以编辑图像数据以增加第一和第二侧的重叠长度。 设置与编辑图像数据中的第一和第二边交叉的测量窗口。 测量测量窗口中的第一和第二侧之间的距离。