-
1.发明申请公开(公告)号：US20120058432A1
公开(公告)日：2012-03-08
申请号：US13219579
申请日：2011-08-26
Applicant: Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
Inventor： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
IPC: G03F7/20
Abstract: A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.
Abstract translation: 形成半导体器件的方法可以包括基于用于形成掩模的最终图案来确定包括多个镜头的镜头组。 包括在多个镜头中的拍摄可以被分类为处于第一传球镜头或第二镜头组中的每一个，其中每个镜头可以包括多个非直接相邻镜头。 可以执行第一遍曝光以辐射掩模版以提供第一遍照射设置，并且可以执行第二曝光曝光以辐射掩模版以提供第二遍照射设置。
-
公开(公告)号：US20100266959A1
公开(公告)日：2010-10-21
申请号：US12662402
申请日：2010-04-15
Applicant: Sang-Hee Lee , Jin Choi , Byung-Gook Kim , Hee-Bom Kim
Inventor： Sang-Hee Lee , Jin Choi , Byung-Gook Kim , Hee-Bom Kim
IPC: G03F7/20
CPC classification number: B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174 , H01J2237/0451 , H01J2237/0458 , H01J2237/15 , H01J2237/31771 , H01J2237/31776
Abstract: A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.
Abstract translation: 图案形成方法包括提供抗蚀剂，将第一电子束照射到抗蚀剂的第一区域，并且将第二电子束照射到沿着抗蚀剂的第一区域的边界限定的第二区域，其中第一电子 梁具有具有多边形形状的第一横截面，并且第二电子束具有具有多边形形状的第二横截面。
-
3.发明授权Methods of forming semiconductor devices using photolithographic shot grouping 有权使用光刻射击分组形成半导体器件的方法公开(公告)号：US08475980B2
公开(公告)日：2013-07-02
申请号：US13219579
申请日：2011-08-26
Applicant: Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
Inventor： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
Abstract: A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.
Abstract translation: 形成半导体器件的方法可以包括基于用于形成掩模的最终图案来确定包括多个镜头的镜头组。 包括在多个镜头中的拍摄可以被分类为处于第一传球镜头或第二镜头组中的每一个，其中每个镜头可以包括多个非直接相邻镜头。 可以执行第一遍曝光以辐射掩模版以提供第一遍照射设置，并且可以执行第二曝光曝光以辐射掩模版以提供第二遍照射设置。
-
公开(公告)号：US08329381B2
公开(公告)日：2012-12-11
申请号：US13399090
申请日：2012-02-17
Applicant: Jin Choi , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
Inventor： Jin Choi , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
IPC: G03C5/00
CPC classification number: H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
Abstract: A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.
Abstract translation: 图案形成方法包括：提供具有第一孔的第一掩模，通过照射通过第一孔的第一电子束，在抗蚀剂上形成第一转印图案，第一转印图案沿着第一方向延伸并沿着其圆周具有边界 并且所述第一电子束在从所述第一孔出射时具有第一正方形的横截面，并且通过照射通过所述第一孔的第二电子束在所述抗蚀剂上形成第二转移图案，所述第二转移图案沿所述第一方向延伸 并且当从第一孔径出现时，与第一转印图案的边界的一部分重叠，并且第二电子束具有第二正方形的横截面。
-
5.发明授权公开(公告)号：US08673522B2
公开(公告)日：2014-03-18
申请号：US13571043
申请日：2012-08-09
Applicant: Jin Choi , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
Inventor： Jin Choi , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
IPC: G03F1/38
CPC classification number: G03F1/44
Abstract: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.
Abstract translation: 光掩模的制造方法包括在基板上形成光致抗蚀剂膜，在光致抗蚀剂膜上形成缺陷检测图案。 缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案，并且在与第一方向不同的第二方向上延伸。 使用由同一放大器衍射的电子束（e-beam）形成第一图案和第二图案。
-
Patent Agency Ranking
公开(公告)号：US08817234B2
公开(公告)日：2014-08-26
申请号：US13180776
申请日：2011-07-12
Applicant: Jin Choi , Byung-gook Kim
Inventor： Jin Choi , Byung-gook Kim
CPC classification number: G02B3/0062 , G02B3/0056 , G02B5/1885 , G02B27/0905 , G02B27/0944 , G02B27/425 , G02B27/4277 , G02B27/50 , G02F1/29 , G02F1/31 , G03F7/70208 , G03F7/70275
Abstract: An optical device for splitting a single beam to a plurality of beams and an exposure apparatus including the optical device are disclosed. The optical device includes a first DOE lens array including a plurality of first diffractive optical element (DOE) lenses that are two-dimensionally arranged on a first plane and a second lens array including a plurality of second DOE lenses arranged on a second plane parallel to the first plane so as to respectively correspond to the plurality of first DOE lenses. The first DOE lens array splits a first parallel beam into a plurality of second beams by condensing the first parallel beam and the second DOE lens array modifies the plurality of second beams into a plurality of third beams.
Abstract translation: 公开了一种用于将单个光束分割成多个光束的光学装置和包括该光学装置的曝光装置。 光学装置包括第一DOE透镜阵列，其包括二维地布置在第一平面上的多个第一衍射光学元件（DOE）透镜和第二透镜阵列，所述第二透镜阵列包括布置在平行于第二平面的第二平面上的多个第二DOE透镜 第一平面，以分别对应于多个第一DOE透镜。 第一DOE透镜阵列通过聚焦第一平行光束将第一平行光束分成多个第二光束，并且第二DOE透镜阵列将多个第二光束修改成多个第三光束。
-
公开(公告)号：US09671686B2
公开(公告)日：2017-06-06
申请号：US14693429
申请日：2015-04-22
Applicant: Jin Choi , In-kyun Shin , Byoung-sup Ahn , Sang-hee Lee
Inventor： Jin Choi , In-kyun Shin , Byoung-sup Ahn , Sang-hee Lee
Abstract: Disclosed are an exposure method and a method of manufacturing a mask and a semiconductor device using the same, which minimize time taken by mask data preparation (MDP) to optimize a total exposure process and enhance a quality of a pattern by using an inverse solution concept, based on a multi-beam mask writer. The exposure method includes receiving mask tape output (MTO) design data obtained through optical proximity correction (OPC), preparing mask data, including a job deck, for the MTO design data without a data format conversion, performing complex correction, including proximity effect correction (PEC) of an error caused by an e-beam proximity effect and mask process correction (MPC) of an error caused by an exposure process, on the mask data, generating pixel data, based on data for which the complex correction is performed, and performing e-beam writing on a substrate for a mask, based on the pixel data.
-
8.发明授权Method for manufacturing semiconductor device by correcting overlapping shots based on a radiation influenced pattern 有权通过基于辐射影响图案校正重叠拍摄来制造半导体器件的方法公开(公告)号：US08458624B2
公开(公告)日：2013-06-04
申请号：US13192124
申请日：2011-07-27
Applicant: Jin Choi , Sang-hee Lee , Seong-june Min
Inventor： Jin Choi , Sang-hee Lee , Seong-june Min
IPC: G06F17/50
CPC classification number: G03F1/78 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776
Abstract: A method of manufacturing semiconductor devices is disclosed. The method includes determining fractured shots that do not overlap each other based on a final pattern; determining overlapping shots that are shots that overlap each other based on the final pattern; generating area difference data by comparing the areas of the overlapping shots and the fractured shots with each other; calculating a radiation influenced pattern based on the area difference data; and correcting the overlapping shots based on the radiation influenced pattern.
Abstract translation: 公开了制造半导体器件的方法。 该方法包括基于最终模式确定彼此不重叠的断裂射击; 确定基于最终模式重叠的重叠拍摄; 通过比较重叠射击和断裂射击的面积来产生区域差异数据; 基于面积差异数据计算辐射影响模式; 并基于辐射影响模式校正重叠拍摄。
-
公开(公告)号：US08133640B2
公开(公告)日：2012-03-13
申请号：US12230473
申请日：2008-08-29
Applicant: Sang-hee Lee , Jin Choi
Inventor： Sang-hee Lee , Jin Choi
CPC classification number: G03F1/64 , Y10T156/1744
Abstract: An apparatus and a method for mounting a pellicle includes a pellicle compression plate formed to apply a plurality of particular pressures to a plurality of points or areas of a region of the reticle where a pellicle frame of the pellicle contacts a reticle.
Abstract translation: 一种用于安装防护薄膜组件的装置和方法包括形成为对掩模版区域的多个点或区域施加多个特定压力的防护薄片组件压缩板，其中防护薄膜组件的防护薄膜框架接触掩模版。
-
公开(公告)号：US20120047474A1
公开(公告)日：2012-02-23
申请号：US13192124
申请日：2011-07-27
Applicant: Jin Choi , Sang-hee Lee , Seong-june Min
Inventor： Jin Choi , Sang-hee Lee , Seong-june Min
IPC: G06F17/50
CPC classification number: G03F1/78 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776
Abstract: A method of manufacturing semiconductor devices is disclosed. The method includes determining fractured shots that do not overlap each other based on a final pattern; determining overlapping shots that are shots that overlap each other based on the final pattern; generating area difference data by comparing the areas of the overlapping shots and the fractured shots with each other; calculating a radiation influenced pattern based on the area difference data; and correcting the overlapping shots based on the radiation influenced pattern.
Abstract translation: 公开了制造半导体器件的方法。 该方法包括基于最终模式确定彼此不重叠的断裂射击; 确定基于最终模式重叠的重叠拍摄; 通过比较重叠射击和断裂射击的面积来产生区域差异数据; 基于面积差异数据计算辐射影响模式; 并基于辐射影响模式校正重叠拍摄。
-
-
-
-
-
-
-
-
-
Search Results
95
records
(took 0.025 seconds)
