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13 条记录 (耗时 0.029 秒)

    Expanding vascular stent
    1.
    发明授权
    Expanding vascular stent 有权
    扩张血管支架

    公开(公告)号：US08882824B2

    公开(公告)日：2014-11-11

    申请号：US12922676

    申请日：2010-04-20

    申请人： Sang-Ho Kim ,  Jong-Chae Park ,  Eun-Jin Kim ,  Il-Gyun Shin ,  Dong-Gon Kim ,  Han-Ki Kim

    发明人： Sang-Ho Kim ,  Jong-Chae Park ,  Eun-Jin Kim ,  Il-Gyun Shin ,  Dong-Gon Kim ,  Han-Ki Kim

    IPC分类号： A61F2/06 ,  A61F2/915

    CPC分类号： A61F2/915 ,  A61F2002/91525 ,  A61F2002/91575 ,  A61F2230/0013

    摘要： An expanding vascular stent is disclosed that is inserted into a blood vessel in the human body and expands the blood vessel. The stent is configured in such a way that adjacent rows, each of which is comprised of a plurality of identical cells, are symmetrically arranged, in an out of phase manner. When the stent is expanded in the radial direction, the adjacent rows are expanded in opposite directions, maintaining their linearly symmetrical state. Therefore, the reduction in the length of the stent can be minimized. Since the stent has also a great degree of flexibility, when it is inserted into the blood vessel, it can minimize the damage to the blood vessel wall.

    摘要翻译： 公开了一种扩张的血管支架，其被插入到人体的血管中并使血管膨胀。 支架被配置成使得相邻的行由各个相同的单元构成，以相位方式对称地排列。 当支架在径向方向上扩张时，相邻排沿相反方向膨胀，保持其线性对称状态。 因此，可以使支架长度的减小最小化。 由于支架也具有很大的灵活性，所以当插入到血管中时，可以使对血管壁的损伤最小化。

    Expanding Vascular Stent
    2.
    发明申请
    Expanding Vascular Stent 有权
    扩张血管支架

    公开(公告)号：US20110257727A1

    公开(公告)日：2011-10-20

    申请号：US12922676

    申请日：2010-04-20

    申请人： Sang-Ho Kim ,  Jong-Chae Park ,  Eun-Jin Kim ,  Il-Gyun Shin ,  Dong-Gon Kim ,  Han-Ki Kim

    发明人： Sang-Ho Kim ,  Jong-Chae Park ,  Eun-Jin Kim ,  Il-Gyun Shin ,  Dong-Gon Kim ,  Han-Ki Kim

    IPC分类号： A61F2/82

    CPC分类号： A61F2/915 ,  A61F2002/91525 ,  A61F2002/91575 ,  A61F2230/0013

    摘要： An expanding vascular stent is disclosed that is inserted into a blood vessel in the human body and expands the blood vessel. The stent is configured in such a way that adjacent rows, each of which is comprised of a plurality of identical cells, are symmetrically arranged, in an out of phase manner. When the stent is expanded in the radial direction, the adjacent rows are expanded in opposite directions, maintaining their linearly symmetrical state. Therefore, the reduction in the length of the stent can be minimized. Since the stent has also a great degree of flexibility, when it is inserted into the blood vessel, it can minimize the damage to the blood vessel wall.

    摘要翻译： 公开了一种扩张的血管支架，其被插入到人体的血管中并使血管膨胀。 支架被配置成使得相邻的行由各个相同的单元构成，以相位方式对称地排列。 当支架在径向方向上扩张时，相邻排沿相反方向膨胀，保持其线性对称状态。 因此，可以使支架长度的减小最小化。 由于支架也具有很大的灵活性，所以当插入到血管中时，可以使对血管壁的损伤最小化。

    Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same
    4.
    发明申请
    Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same 有权
    催化剂增强化学气相沉积装置及其沉积方法

    公开(公告)号：US20060254513A1

    公开(公告)日：2006-11-16

    申请号：US11405552

    申请日：2006-04-18

    申请人： Hee-Cheol Kang ,  Kazuo Furuno ,  Han-Ki Kim ,  Myoung-Soo Kim

    发明人： Hee-Cheol Kang ,  Kazuo Furuno ,  Han-Ki Kim ,  Myoung-Soo Kim

    IPC分类号： C23C16/00

    CPC分类号： C23C16/44 ,  C23C16/46

    摘要： A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.

    摘要翻译： 催化剂增强化学气相沉积（CECVD）装置和沉积方法，其中向催化剂丝施加张力以防止催化剂丝由于热变形而下垂，并且使用另外的气体来防止异物 生成。 CECVD装置可以构造有处理室，将工艺气体引入处理室的喷头，设置在处理室中的分解从喷头引入的气体的拉伸催化剂丝线结构以及由其分解的气体 催化剂丝线结构被沉积，使得张力被施加到催化剂丝上，以防止催化剂丝由于热变形而下垂，并且使用额外的气体来防止产生异物，从而消除不均匀的发生 底物的温度和不均匀的膜生长，并且伴随地提高催化剂丝的耐久性。

    Catalytic enhanced chemical vapor deposition apparatus having efficient filament arrangement structure
    5.
    发明申请
    Catalytic enhanced chemical vapor deposition apparatus having efficient filament arrangement structure 有权
    催化增强化学气相沉积装置具有有效的灯丝排列结构

    公开(公告)号：US20060269671A1

    公开(公告)日：2006-11-30

    申请号：US11439350

    申请日：2006-05-24

    申请人： Han-Ki Kim ,  Myung-Soo Huh ,  Myoung-Soo Kim ,  Kyu-Sung Lee

    发明人： Han-Ki Kim ,  Myung-Soo Huh ,  Myoung-Soo Kim ,  Kyu-Sung Lee

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/44

    摘要： The present invention provides a catalytic enhanced chemical vapor deposition (CVD) apparatus capable of maximizing efficiency of gas use to 80% or more, and obtaining a uniform thin film by efficiently arranging filaments mounted on a shower head of the catalytic enhanced CVD apparatus, thereby uniformly decomposing a deposition source gas. The present invention also provides a method for fabricating an organic electroluminescent device with an inorganic film formed through the catalytic enhanced CVD apparatus.

    摘要翻译： 本发明提供一种催化增强化学气相沉积（CVD）装置，其能够将气体使用效率最大化到80％以上，并且通过有效地布置安装在催化增强CVD装置的喷头上的细丝，获得均匀的薄膜，由此 均匀分解沉积源气体。 本发明还提供一种通过催化增强CVD装置形成无机膜的有机电致发光器件的制造方法。

    Method of manufacturing organic light emitting device by using mirror shaped target sputtering apparatus
    6.
    发明申请
    Method of manufacturing organic light emitting device by using mirror shaped target sputtering apparatus 审中-公开
    使用镜像靶溅射装置制造有机发光器件的方法

    公开(公告)号：US20060121816A1

    公开(公告)日：2006-06-08

    申请号：US11171498

    申请日：2005-07-01

    申请人： Kyu-Sung Lee ,  Han-Ki Kim ,  Do-Geun Kim ,  Myung-Soo Huh ,  Seok-Heon Jeong

    发明人： Kyu-Sung Lee ,  Han-Ki Kim ,  Do-Geun Kim ,  Myung-Soo Huh ,  Seok-Heon Jeong

    IPC分类号： H01J9/24 ,  H01J9/00

    CPC分类号： H01L51/5203 ,  C23C14/352 ,  H01L51/0008 ,  H01L51/0021

    摘要： A method of manufacturing an organic light emitting device by using a facing target sputtering apparatus is provided. The method includes forming a first electrode on a substrate; forming an organic film on the first electrode; and forming a second electrode on the organic film by using a facing target sputtering apparatus. Accordingly, an electrode film is formed on the organic light emitting device at a low temperature without deterioration of the electrode film due to plasma, it is possible to improve light emitting efficiency and electro-optical characteristics of the organic light emitting device.

    摘要翻译： 提供了一种通过使用面对靶溅射装置制造有机发光器件的方法。 该方法包括在基板上形成第一电极; 在第一电极上形成有机膜; 以及通过使用面对靶溅射装置在所述有机膜上形成第二电极。 因此，在低温下在有机发光器件上形成电极膜，而不会由于等离子体而导致电极膜的劣化，可以提高有机发光器件的发光效率和电光特性。

    Method of fabricating organic light emitting device
    8.
    发明申请
    Method of fabricating organic light emitting device 有权

    公开(公告)号：US20060228827A1

    公开(公告)日：2006-10-12

    申请号：US11400474

    申请日：2006-04-06

    申请人： Han-Ki Kim ,  Myung-Soo Huh ,  Myoung-Soo Kim ,  Kyu-Sung Lee

    发明人： Han-Ki Kim ,  Myung-Soo Huh ,  Myoung-Soo Kim ,  Kyu-Sung Lee

    IPC分类号： H01L21/00 ,  H01L51/40

    CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01L51/5253

    摘要： Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

    Method of fabricating organic light emitting device
    9.
    发明授权
    Method of fabricating organic light emitting device 有权
    制造有机发光装置的方法

    公开(公告)号：US08383208B2

    公开(公告)日：2013-02-26

    申请号：US11400474

    申请日：2006-04-06

    申请人： Han-Ki Kim ,  Myung-Soo Huh ,  Myoung-Soo Kim ,  Kyu-Sung Lee

    发明人： Han-Ki Kim ,  Myung-Soo Huh ,  Myoung-Soo Kim ,  Kyu-Sung Lee

    IPC分类号： H05H1/24 ,  C23C16/00 ,  H05B3/00

    CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01L51/5253

    摘要： Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

    摘要翻译： 提供了使用等离子体和/或热分解制造有机发光器件的方法。 通过使第一和第二自由基反应形成绝缘层。 通过使第一气体通过等离子体生成区域和加热体而形成第一基团，通过使第二气体通过加热体而形成第二自由基。 该方法通过基本分解源气体来改善所得绝缘层的特性并提高源气体的使用效率。 绝缘层可以是形成在有机发光器件上的钝化层。 该方法使用诸如感应耦合等离子体化学气相沉积（ICP-CVD）装置或等离子体增强化学气相沉积（PECVD）装置之类的等离子体装置。

    Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same
    10.
    发明授权
    Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same 有权
    催化剂增强化学气相沉积装置及其沉积方法

    公开(公告)号：US08052795B2

    公开(公告)日：2011-11-08

    申请号：US11405552

    申请日：2006-04-18

    申请人： Hee-Cheol Kang ,  Kazuo Furuno ,  Han-Ki Kim ,  Myoung-Soo Kim

    发明人： Hee-Cheol Kang ,  Kazuo Furuno ,  Han-Ki Kim ,  Myoung-Soo Kim

    IPC分类号： C23C16/00

    CPC分类号： C23C16/44 ,  C23C16/46

    摘要： A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.

    摘要翻译： 催化剂增强化学气相沉积（CECVD）装置和沉积方法，其中向催化剂丝施加张力以防止催化剂丝由于热变形而下垂，并且使用另外的气体来防止异物 生成。 CECVD装置可以构造有处理室，将工艺气体引入处理室的喷头，设置在处理室中的分解从喷头引入的气体的拉伸催化剂丝线结构以及由其分解的气体 催化剂丝线结构被沉积，使得张力被施加到催化剂丝上，以防止催化剂丝由于热变形而下垂，并且使用额外的气体来防止产生异物，从而消除不均匀的发生 底物的温度和不均匀的膜生长，并且伴随地提高催化剂丝的耐久性。