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公开(公告)号：US07449944B2
公开(公告)日：2008-11-11
申请号：US11321873
申请日：2005-12-30
Applicant: Sang-Jin Byeon , Jae-Jin Lee
Inventor： Sang-Jin Byeon , Jae-Jin Lee
CPC classification number: G11C5/145 , G11C11/401 , G11C11/4074 , G11C29/02 , G11C29/021 , G11C29/028
Abstract: An internal voltage generator includes a high efficient charge pump. The internal voltage generator includes an oscillation signal generator for receiving a reference voltage and a pumping voltage to thereby output an oscillation signal, a pump control logic for outputting a pumping control signal and a precharge signal in response to the oscillation signal, and a charge pump for precharging the pair of bootstrapping node by connecting the pair of bootstrapping node in response to the precharge signal to thereby generate the pumping voltage of a predetermined level after precharging the pair of bootstrapping node into a level of the power supply voltage and charge sharing the pair of bootstrapping node and the pumping voltage in response to the precharge signal. Herein, the pumping control signal controls a pumping operation and the precharge signal precharges a pair of bootstrapping node for generating the pumping voltage by pumping a power supply voltage.
Abstract translation: 内部电压发生器包括高效电荷泵。 内部电压发生器包括用于接收参考电压和泵浦电压从而输出振荡信号的振荡信号发生器，用于响应于振荡信号输出泵控制信号和预充电信号的泵控制逻辑，以及电荷泵 用于通过响应于预充电信号连接一对自举节点来预充电一对自举节点，从而在将一对自举节点预充电到电源电压的电平和电荷共享对之后产生预定电平的泵浦电压 的自举节点和响应于预充电信号的抽运电压。 这里，泵送控制信号控制泵送操作，并且预充电信号通过泵送电源电压来预充电一对自举节点以产生泵送电压。
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公开(公告)号：US20060244518A1
公开(公告)日：2006-11-02
申请号：US11321873
申请日：2005-12-30
Applicant: Sang-Jin Byeon , Jae-Jin Lee
Inventor： Sang-Jin Byeon , Jae-Jin Lee
IPC: G05F1/10
CPC classification number: G11C5/145 , G11C11/401 , G11C11/4074 , G11C29/02 , G11C29/021 , G11C29/028
Abstract: The present invention provides an internal voltage generator including a high efficient charge pump. The internal voltage generator includes an oscillation signal generator for receiving a reference voltage and a pumping voltage to thereby output an oscillation signal, a pump control logic for outputting a pumping control signal and a precharge signal in response to the oscillation signal, and a charge pump for precharging the pair of bootstrapping node by connecting the pair of bootstrapping node in response to the precharge signal to thereby generate the pumping voltage of a predetermined level after precharging the pair of bootstrapping node into a level of the power supply voltage and charge sharing the pair of bootstrapping node and the pumping voltage in response to the precharge signal. Herein, the pumping control signal controls a pumping operation and the precharge signal precharges a pair of bootstrapping node for generating the pumping voltage by pumping a power supply voltage.
Abstract translation: 本发明提供一种包括高效电荷泵的内部电压发生器。 内部电压发生器包括用于接收参考电压和泵浦电压从而输出振荡信号的振荡信号发生器，用于响应于振荡信号输出泵控制信号和预充电信号的泵控制逻辑，以及电荷泵 用于通过响应于预充电信号连接一对自举节点来预充电一对自举节点，从而在将一对自举节点预充电到电源电压的电平和电荷共享对之后产生预定电平的泵浦电压 的自举节点和响应于预充电信号的抽运电压。 这里，泵送控制信号控制泵送操作，并且预充电信号通过泵送电源电压来预充电一对自举节点以产生泵送电压。
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公开(公告)号：US08350362B2
公开(公告)日：2013-01-08
申请号：US12831341
申请日：2010-07-07
Applicant: Sang-Jin Byeon , Jun-Gi Choi
Inventor： Sang-Jin Byeon , Jun-Gi Choi
IPC: H01L29/40
CPC classification number: H01L21/76879 , H01L23/481 , H01L23/5256 , H01L25/0657 , H01L2225/06527 , H01L2225/06544 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor integrated circuit includes: a semiconductor chip; a through-chip via passing through a conductive pattern disposed in the semiconductor chip and cutting the conductive pattern; and an insulation pattern disposed on an outer circumference surface of the through-chip via to insulate the conductive pattern from the through-chip via.
Abstract translation: 半导体集成电路包括：半导体芯片; 通过芯片穿过设置在半导体芯片中的导电图案并切割导电图案; 以及设置在贯通芯片通孔的外周面上的绝缘图案，以使导电图案与贯通芯片通孔绝缘。
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4.发明授权Internal voltage generator and semiconductor memory device including the same 有权内部电压发生器和包括其的半导体存储器件公开(公告)号：US08274856B2
公开(公告)日：2012-09-25
申请号：US12165057
申请日：2008-06-30
Applicant: Sang-Jin Byeon
Inventor： Sang-Jin Byeon
IPC: G11C5/14
CPC classification number: G11C5/147
Abstract: A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage.
Abstract translation: 提供一种半导体器件，其包括内部电压发生器电路，其根据操作速度提供具有不同电平的内部电压。 半导体器件包括内部电压发生器电路，其被配置为接收操作速度信息以根据操作速度产生具有不同电平的内部电压; 以及使用内部电压工作的内部电路。
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公开(公告)号：US07907462B2
公开(公告)日：2011-03-15
申请号：US12005506
申请日：2007-12-26
Applicant: Sang-Jin Byeon
Inventor： Sang-Jin Byeon
CPC classification number: G11C7/04 , G11C5/147 , G11C7/08 , G11C11/4074 , G11C11/4091
Abstract: A core voltage discharger is capable of adjusting an amount of a current discharged according to temperature. The discharger for decreasing a level of a predetermined voltage receives temperature information from an on die thermal sensor and discharges a different amount of current in response to the temperature information.
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Patent Agency Ranking
公开(公告)号：US07889574B2
公开(公告)日：2011-02-15
申请号：US12219572
申请日：2008-07-24
Applicant: Sang-Jin Byeon , Kang-Seol Lee
Inventor： Sang-Jin Byeon , Kang-Seol Lee
IPC: G11C7/10
Abstract: A semiconductor memory device employs a clamp for preventing latch up. For the purpose, the semiconductor memory device includes a precharging/equalizing unit for precharging and equalizing a pair of bit lines, and a control signal generating unit for producing a control signal which controls enable and disable of the precharging/equalizing unit, wherein the control signal generating unit includes a clamping unit to clamp its source voltage to a voltage level lower than that of its bulk bias.
Abstract translation: 半导体存储器件采用夹具来防止闩锁。 为此，半导体存储器件包括用于对一对位线进行预充电和均衡的预充电/均衡单元，以及用于产生控制预充电/均衡单元的使能和禁能的控制信号的控制信号产生单元，其中控制 信号发生单元包括钳位单元，用于将其源极电压钳位到低于其体积偏压的电压电平。
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公开(公告)号：US07545203B2
公开(公告)日：2009-06-09
申请号：US11526818
申请日：2006-09-26
Applicant: Sang-Jin Byeon , Seok-Cheol Yoon
Inventor： Sang-Jin Byeon , Seok-Cheol Yoon
CPC classification number: G11C5/145
Abstract: An inter voltage generation circuit includes a pumping voltage generator to generate a pumping voltage, a level comparator to compare the pumping voltage level with a peripheral voltage level and output an enable signal depending on the comparison result, and a peripheral voltage generator to output a pumping enable signal according to the enable signal and generate a peripheral voltage according to the enable signal.
Abstract translation: 电压产生电路包括产生泵浦电压的泵浦电压发生器，用于将泵浦电压电平与外围电压电平进行比较的电平比较器，并根据比较结果输出使能信号;以及外围电压发生器，输出泵浦 根据使能信号使能信号，并根据使能信号产生外设电压。
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公开(公告)号：US07420358B2
公开(公告)日：2008-09-02
申请号：US11319299
申请日：2005-12-27
Applicant: Sang-Jin Byeon , Seok-Cheol Yoon
Inventor： Sang-Jin Byeon , Seok-Cheol Yoon
CPC classification number: G05F3/30
Abstract: An internal voltage generating apparatus adaptive to a temperature change includes a reference voltage circuit including a complementary to absolute temperature (CTAT) type transistor and a proportional to absolute temperature (PTAT) type transistor for generating a first to a third initial reference voltage signals. A buffer circuit for buffering a first, a second and a third initial reference voltage signal is included to generate a first, a second, and a third reference voltage signal in response to enable signals. An internal voltage generating circuit is included to generate an internal voltage signal based on the first, the second and the third reference voltage signal by using an inputted power voltage.
Abstract translation: 适于温度变化的内部电压发生装置包括包括与绝对温度（CTAT）型晶体管互补的参考电压电路和用于产生第一至第三初始参考电压信号的绝对温度（PTAT）型晶体管的比例。 包括用于缓冲第一，第二和第三初始参考电压信号的缓冲电路，以响应于使能信号产生第一，第二和第三参考电压信号。 包括内部电压产生电路，以通过使用输入的电源电压来产生基于第一，第二和第三参考电压信号的内部电压信号。
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公开(公告)号：US20070080725A1
公开(公告)日：2007-04-12
申请号：US11528528
申请日：2006-09-28
Applicant: Sang-Jin Byeon , Seok-Cheol Yoon
Inventor： Sang-Jin Byeon , Seok-Cheol Yoon
IPC: H03L7/00
CPC classification number: G11C7/20 , G11C5/14 , G11C7/04 , H03K17/223
Abstract: A power-up signal generator of a semiconductor device includes a voltage dividing block, a level detection block, and an output block. The voltage dividing block outputs a divided voltage corresponding to a voltage level of an external power supply voltage. The level detection block is controlled according to the divided voltage, and comprises a pull-up unit and a pull-down unit. The output block outputs a power-up signal having a logic level corresponding to a voltage level of an output node of the level detection block. The pull-up unit and the pull-down unit have different threshold voltage levels with respect to a temperature change.
Abstract translation: 半导体器件的上电信号发生器包括分压块，电平检测块和输出块。 分压块输出对应于外部电源电压的电压电平的分压。 电平检测块根据分压控制，包括一个上拉单元和一个下拉单元。 输出块输出具有与电平检测块的输出节点的电压电平对应的逻辑电平的上电信号。 上拉单元和下拉单元相对于温度变化具有不同的阈值电压电平。
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公开(公告)号：US20070001753A1
公开(公告)日：2007-01-04
申请号：US11321420
申请日：2005-12-29
Applicant: Sang-Jin Byeon
Inventor： Sang-Jin Byeon
IPC: G05F1/10
CPC classification number: G05F1/465
Abstract: An internal voltage generation circuit of a semiconductor device includes: a comparator for comparing a reference voltage level with a detection voltage level to provide a comparison signal; an internal voltage output device for raising a voltage of an internal voltage output terminal to a predetermined level in response to the comparison signal; and an internal voltage output controller for controlling the internal voltage output terminal to be raised to a selected level. A voltage applied to the internal voltage output terminal is outputted as an internal voltage.
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