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公开(公告)号:US20080054271A1
公开(公告)日:2008-03-06
申请号:US11692660
申请日:2007-03-28
申请人: Sang-Yeob SONG , Ji Hye SHIM , Bum Joon KIM
发明人: Sang-Yeob SONG , Ji Hye SHIM , Bum Joon KIM
IPC分类号: H01L33/00
摘要: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
摘要翻译: 氮化物半导体发光二极管(LED)包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层,所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。
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公开(公告)号:US20140193936A1
公开(公告)日:2014-07-10
申请号:US13955569
申请日:2013-07-31
申请人: Hyun Ju CHOI , CHANG HO LEE , ILSOO OH , HeeJoo KO , DAE YUP SHIN , KeonHa CHOI , CHANGMIN LEE , INJAE LEE , Pyungeun JEON , SEJIN CHO , JinYoung YUN , Bora LEE , BEOMJOON KIM , Yeon woo LEE , Ji Hye SHIM , Joongwon SIM
发明人: Hyun Ju CHOI , CHANG HO LEE , ILSOO OH , HeeJoo KO , DAE YUP SHIN , KeonHa CHOI , CHANGMIN LEE , INJAE LEE , Pyungeun JEON , SEJIN CHO , JinYoung YUN , Bora LEE , BEOMJOON KIM , Yeon woo LEE , Ji Hye SHIM , Joongwon SIM
IPC分类号: H01L51/56
CPC分类号: H01L51/5056 , H01L51/0012
摘要: A method of fabricating an organic light emitting device includes forming a first electrode layer on a substrate, surface-treating the first electrode layer with CF4 plasma, forming a first common layer containing pentacene on the surface-treated first electrode layer, forming an organic light emitting layer on the first common layer, forming a second common layer on the organic light emitting layer, and forming a second electrode layer on the second common layer. The CF4 plasma treatment enhances the luminous efficiency of the organic light emitting device.
摘要翻译: 一种制造有机发光器件的方法包括在衬底上形成第一电极层,用CF 4等离子体对第一电极层进行表面处理,在表面处理的第一电极层上形成含有并五苯的第一公共层,形成有机光 在第一公共层上形成第二公共层,在第二公共层上形成第二电极层。 CF4等离子体处理提高了有机发光器件的发光效率。
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公开(公告)号:US20130076193A1
公开(公告)日:2013-03-28
申请号:US13338634
申请日:2011-12-28
CPC分类号: H01F3/08 , H02K1/02 , H02K1/04 , Y10T29/49009
摘要: Disclosed herein is a laminated core used for a motor including an electric motor, wherein the core is formed of a soft magnetic composite and has a structure in which one or more unit laminates are laminated. Since the core is fabricated by laminating soft magnetic composites, the mechanical strength of the core formed of the soft magnetic composites can be improved.
摘要翻译: 本文公开了一种用于包括电动机的电动机的层叠铁芯,其中芯由软磁性复合材料形成,并且具有其中层压有一个或多个单元层叠体的结构。 由于芯是通过层叠软磁复合材料制成的,所以可以提高由软磁性复合材料形成的芯的机械强度。
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公开(公告)号:US20090165713A1
公开(公告)日:2009-07-02
申请号:US12259709
申请日:2008-10-28
申请人: Changsung Sean KIM , Sam Duk YOO , Jong Pa HONG , Ji Hye SHIM , Won Shin LEE
发明人: Changsung Sean KIM , Sam Duk YOO , Jong Pa HONG , Ji Hye SHIM , Won Shin LEE
IPC分类号: C23C16/54
CPC分类号: C23C16/45508 , C23C16/4412 , C23C16/45504 , C23C16/45574 , C23C16/4558 , C23C16/45582 , C23C16/45591 , C23C16/4584
摘要: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.
摘要翻译: 提供了一种化学气相沉积设备。 该装置包括反应室,气体引入单元和排气单元。 反应室包括其上装载有晶片的基座和通过化学气相沉积处理晶片的反应炉。 气体引入单元设置在反应室的外壁处,以将反应气体从反应炉的外部供应到反应炉的中心部分。 在反应气体用于反应炉中的反应之后,排气单元设置在反应室的中心部分,以将反应气体排出到反应室的上部或下部。 因此,即使当生长高温沉积层的工艺压力增加时,室内的气体密度也可以保持在基本均匀的状态。
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