NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE
    1.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE 审中-公开
    氮化物半导体发光二极管

    公开(公告)号:US20080054271A1

    公开(公告)日:2008-03-06

    申请号:US11692660

    申请日:2007-03-28

    IPC分类号: H01L33/00

    CPC分类号: H01L33/32 H01L33/02

    摘要: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

    摘要翻译: 氮化物半导体发光二极管(LED)包括n型氮化物半导体层; 形成在所述n型氮化物半导体层上的电子发射层,所述电子发射层由包含III族过渡元素的氮化物半导体层组成; 形成在电子发射层上的有源层; 以及形成在有源层上的p型氮化物半导体层。

    CHEMICAL VAPOR DEPOSITION APPARATUS
    4.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS 有权
    化学蒸气沉积装置

    公开(公告)号:US20090165713A1

    公开(公告)日:2009-07-02

    申请号:US12259709

    申请日:2008-10-28

    IPC分类号: C23C16/54

    摘要: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

    摘要翻译: 提供了一种化学气相沉积设备。 该装置包括反应室,气体引入单元和排气单元。 反应室包括其上装载有晶片的基座和通过化学气相沉积处理晶片的反应炉。 气体引入单元设置在反应室的外壁处,以将反应气体从反应炉的外部供应到反应炉的中心部分。 在反应气体用于反应炉中的反应之后,排气单元设置在反应室的中心部分,以将反应气体排出到反应室的上部或下部。 因此,即使当生长高温沉积层的工艺压力增加时,室内的气体密度也可以保持在基本均匀的状态。