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    Semiconductor devices having resistors
    2.
    发明授权
    Semiconductor devices having resistors 有权
    具有电阻器的半导体器件

    公开(公告)号：US08143674B2

    公开(公告)日：2012-03-27

    申请号：US12973253

    申请日：2010-12-20

    申请人： Dae-Won Ha ,  Sang-Yoon Kim

    发明人： Dae-Won Ha ,  Sang-Yoon Kim

    IPC分类号： H01L23/62

    CPC分类号： H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233

    摘要： A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over the semiconductor substrate. A first hole passing through the lower interlayer insulating layer in the first circuit region and a second hole passing through the lower interlayer insulating layer in the second circuit region are provided. A first semiconductor pattern and a second semiconductor pattern are sequentially stacked in the first hole. A first resistor having the same crystalline structure as the second semiconductor pattern is provided in the second hole.

    摘要翻译： 提供了具有电阻器的半导体器件及其制造方法。 半导体器件包括具有第一电路区域和第二电路区域的半导体衬底。 在半导体衬底上设置下层层间绝缘层。 提供穿过第一电路区域中的下层间绝缘层的第一孔和穿过第二电路区域中的下层间绝缘层的第二孔。 第一半导体图案和第二半导体图案依次堆叠在第一孔中。 具有与第二半导体图案相同的晶体结构的第一电阻器设置在第二孔中。

    Methods of fabricating semiconductor devices having resistors
    3.
    发明授权
    Methods of fabricating semiconductor devices having resistors 有权
    制造具有电阻器的半导体器件的方法

    公开(公告)号：US07871890B2

    公开(公告)日：2011-01-18

    申请号：US12248470

    申请日：2008-10-09

    申请人： Dae-Won Ha ,  Sang-Yoon Kim

    发明人： Dae-Won Ha ,  Sang-Yoon Kim

    IPC分类号： H01L21/20

    CPC分类号： H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233

    摘要： A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over the semiconductor substrate. A first hole passing through the lower interlayer insulating layer in the first circuit region and a second hole passing through the lower interlayer insulating layer in the second circuit region are provided. A first semiconductor pattern and a second semiconductor pattern are sequentially stacked in the first hole. A first resistor having the same crystalline structure as the second semiconductor pattern is provided in the second hole.

    摘要翻译： 提供了具有电阻器的半导体器件及其制造方法。 半导体器件包括具有第一电路区域和第二电路区域的半导体衬底。 在半导体衬底上设置下层层间绝缘层。 提供穿过第一电路区域中的下层间绝缘层的第一孔和穿过第二电路区域中的下层间绝缘层的第二孔。 第一半导体图案和第二半导体图案依次堆叠在第一孔中。 具有与第二半导体图案相同的晶体结构的第一电阻器设置在第二孔中。

    ANTICANCER PRODRUG SENSITIVE TO TARGET PROTEASE
    4.
    发明申请
    ANTICANCER PRODRUG SENSITIVE TO TARGET PROTEASE 审中-公开

    公开(公告)号：US20100184955A1

    公开(公告)日：2010-07-22

    申请号：US12355833

    申请日：2009-01-19

    申请人： Sang-Yoon Kim ,  Beom-Suk Lee ,  Ick-Chan Kwon ,  Kui-Won Choi ,  Kwang-Meyng Kim ,  Ju-Hee Ryu ,  Seul-Ki Lee

    发明人： Sang-Yoon Kim ,  Beom-Suk Lee ,  Ick-Chan Kwon ,  Kui-Won Choi ,  Kwang-Meyng Kim ,  Ju-Hee Ryu ,  Seul-Ki Lee

    IPC分类号： C07K14/76

    CPC分类号： A61K47/643 ,  A61K47/58 ,  A61K47/59 ,  A61K47/60 ,  A61K47/61 ,  A61K47/65

    摘要： Provided is an anticancer prodrug sensitive to a target protease. The anticancer prodrug includes an anticancer drug, peptide that is specifically decomposed by the target protease excessively secreted by cancer cells, and a polymer that is specifically accumulated at a target cancer site. When the inactive anticancer prodrug is administered, the anticancer prodrug is accumulated at the target caner site and then the peptide is decomposed by irradiation of radioactive rays, thereby releasing an active anticancer drug at the target caner site. Accordingly, destruction of normal cells can be minimized and a high anticancer therapeutic effect can be obtained by using a small amount of the anticancer drug administered and a small amount of radioactive rays irradiated.

    摘要翻译： 提供对靶蛋白酶敏感的抗癌药物。 抗癌药物包括抗癌药物，被癌细胞过度分泌的靶蛋白酶特异性分解的肽以及特异性聚集在靶癌部位的聚合物。 当施用无活性抗癌前药时，抗癌前药在靶标位点处积聚，然后通过放射线照射分解肽，从而在靶标位点释放活性抗癌药物。 因此，通过使用少量施用的抗癌药物和少量的放射线照射，可以使正常细胞的破坏最小化，可以获得高抗癌治疗效果。

    SEMICONDUCTOR DEVICES HAVING RESISTORS
    7.
    发明申请
    SEMICONDUCTOR DEVICES HAVING RESISTORS 有权
    具有电阻器的半导体器件

    公开(公告)号：US20110084361A1

    公开(公告)日：2011-04-14

    申请号：US12973253

    申请日：2010-12-20

    申请人： Dae-Won Ha ,  Sang-Yoon Kim

    发明人： Dae-Won Ha ,  Sang-Yoon Kim

    IPC分类号： H01L27/06

    CPC分类号： H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233

    摘要： A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over the semiconductor substrate. A first hole passing through the lower interlayer insulating layer in the first circuit region and a second hole passing through the lower interlayer insulating layer in the second circuit region are provided. A first semiconductor pattern and a second semiconductor pattern are sequentially stacked in the first hole. A first resistor having the same crystalline structure as the second semiconductor pattern is provided in the second hole.

    摘要翻译： 提供了具有电阻器的半导体器件及其制造方法。 半导体器件包括具有第一电路区域和第二电路区域的半导体衬底。 在半导体衬底上设置下层层间绝缘层。 提供穿过第一电路区域中的下层间绝缘层的第一孔和穿过第二电路区域中的下层间绝缘层的第二孔。 第一半导体图案和第二半导体图案依次堆叠在第一孔中。 具有与第二半导体图案相同的晶体结构的第一电阻器设置在第二孔中。

    Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same
    9.
    发明授权
    Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same 有权
    具有凸起的半导体图案的有源元件的半导体器件及其制造方法

    公开(公告)号：US07923810B2

    公开(公告)日：2011-04-12

    申请号：US12288280

    申请日：2008-10-17

    申请人： Dae-Won Ha ,  Sang-Yoon Kim

    发明人： Dae-Won Ha ,  Sang-Yoon Kim

    IPC分类号： H01L21/70

    CPC分类号： H01L27/0629 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0635

    摘要： A semiconductor device may include a semiconductor region of a semiconductor substrate wherein a P-N junction is defined between the semiconductor region and a bulk of the semiconductor substrate. An insulating isolation structure in the semiconductor substrate may surround sidewalls of the semiconductor region. An interlayer insulating layer may be on the semiconductor substrate, on the semiconductor region, and on the insulating isolation structure, and the interlayer insulating layer may have first and second spaced apart element holes exposing respective first and second portions of the semiconductor region. A first semiconductor pattern may be in the first element hole on the first exposed portion of the semiconductor region, and a second semiconductor pattern may be in the second element hole on the second exposed portion of the semiconductor region. A surface portion of the first semiconductor pattern opposite the semiconductor substrate and a surface portion of the second semiconductor pattern opposite the semiconductor substrate may have a same conductivity type. Related methods are also discussed.

    摘要翻译： 半导体器件可以包括半导体衬底的半导体区域，其中在半导体区域和半导体衬底的主体之间限定P-N结。 半导体衬底中的绝缘隔离结构可以围绕半导体区域的侧壁。 层间绝缘层可以在半导体衬底上，半导体区域上和绝缘隔离结构上，并且层间绝缘层可以具有暴露半导体区域的相应第一和第二部分的第一和第二间隔开的元件孔。 第一半导体图案可以在半导体区域的第一暴露部分上的第一元件孔中，并且第二半导体图案可以位于半导体区域的第二暴露部分上的第二元件孔中。 与半导体衬底相对的第一半导体图案的表面部分和与半导体衬底相对的第二半导体图案的表面部分可以具有相同的导电类型。 还讨论了相关方法。

    Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same
    10.
    发明申请
    Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same 有权
    具有凸起的半导体图案的有源元件的半导体器件及其制造方法

    公开(公告)号：US20090102012A1

    公开(公告)日：2009-04-23

    申请号：US12288280

    申请日：2008-10-17

    申请人： Dae-Won Ha ,  Sang-Yoon Kim

    发明人： Dae-Won Ha ,  Sang-Yoon Kim

    IPC分类号： H01L27/082

    CPC分类号： H01L27/0629 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0635

    摘要： A semiconductor device may include a semiconductor region of a semiconductor substrate wherein a P-N junction is defined between the semiconductor region and a bulk of the semiconductor substrate. An insulating isolation structure in the semiconductor substrate may surround sidewalls of the semiconductor region. An interlayer insulating layer may be on the semiconductor substrate, on the semiconductor region, and on the insulating isolation structure, and the interlayer insulating layer may have first and second spaced apart element holes exposing respective first and second portions of the semiconductor region. A first semiconductor pattern may be in the first element hole on the first exposed portion of the semiconductor region, and a second semiconductor pattern may be in the second element;hole on the second exposed portion of the semiconductor region. A surface portion of the first semiconductor pattern opposite the semiconductor substrate and a surface portion of the second semiconductor pattern opposite the semiconductor substrate may have a same conductivity type. Related methods are also discussed.

    摘要翻译： 半导体器件可以包括半导体衬底的半导体区域，其中在半导体区域和半导体衬底的主体之间限定P-N结。 半导体衬底中的绝缘隔离结构可以围绕半导体区域的侧壁。 层间绝缘层可以在半导体衬底上，半导体区域上和绝缘隔离结构上，并且层间绝缘层可以具有暴露半导体区域的相应第一和第二部分的第一和第二间隔开的元件孔。 第一半导体图案可以位于半导体区域的第一暴露部分的第一元件孔中，并且第二半导体图案可以在第二元件中;半导体区域的第二暴露部分上的孔。 与半导体衬底相对的第一半导体图案的表面部分和与半导体衬底相对的第二半导体图案的表面部分可以具有相同的导电类型。 还讨论了相关方法。