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    METHOD OF FORMING A TANTALUM-CONTAINING LAYER ON A SUBSTRATE
    3.
    发明申请
    METHOD OF FORMING A TANTALUM-CONTAINING LAYER ON A SUBSTRATE 有权
    在基材上形成含钽的层的方法

    公开(公告)号：US20110244681A1

    公开(公告)日：2011-10-06

    申请号：US13056934

    申请日：2009-07-15

    申请人： Nicolas Blasco ,  Anthony Correia-Anacleto ,  Audrey Pinchart ,  Andreas Zauner ,  Ziyun Wang

    发明人： Nicolas Blasco ,  Anthony Correia-Anacleto ,  Audrey Pinchart ,  Andreas Zauner ,  Ziyun Wang

    IPC分类号： H01L21/3205

    CPC分类号： C23C16/45553 ,  C23C16/18

    摘要： A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Cp(R1)mTa(NR22)2(═NR3) (I): wherein: R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.

    摘要翻译： 一种在基底上形成含钽层的方法，所述方法至少包括以下步骤：a）提供包含至少一种式Cp（R1）mTa（NR22）2（= NR3）（= I）：其中：R 1是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R2是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R3是选自H，包含1至6个碳原子的直链或支链烃基的有机配体; b）根据原子层沉积方法使包含至少一种式（I）化合物的蒸气与基材反应，以在所述基材的至少一个表面上形成含钽复合物层。

    Method of forming a tantalum-containing layer on a substrate
    4.
    发明授权
    Method of forming a tantalum-containing layer on a substrate 有权
    在基板上形成含钽层的方法

    公开(公告)号：US09085823B2

    公开(公告)日：2015-07-21

    申请号：US13056934

    申请日：2009-07-15

    申请人： Nicolas Blasco ,  Anthony Correia-Anacleto ,  Audrey Pinchart ,  Andreas Zauner ,  Ziyun Wang

    发明人： Nicolas Blasco ,  Anthony Correia-Anacleto ,  Audrey Pinchart ,  Andreas Zauner ,  Ziyun Wang

    IPC分类号： H01L21/3205 ,  C23C16/455 ,  C23C16/18

    CPC分类号： C23C16/45553 ,  C23C16/18

    摘要： A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Cp(R1)mTa(NR22)2(═NR3) (I): wherein: R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.

    摘要翻译： 一种在基底上形成含钽层的方法，所述方法至少包括以下步骤：a）提供包含至少一种式Cp（R1）mTa（NR22）2（= NR3）（= I）：其中：R 1是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R2是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R3是选自H，包含1至6个碳原子的直链或支链烃基的有机配体; b）根据原子层沉积方法使包含至少一种式（I）化合物的蒸气与基材反应，以在所述基材的至少一个表面上形成含钽复合物层。

    Niobium and vanadium organometallic precursors for thin film deposition
    5.
    发明授权
    Niobium and vanadium organometallic precursors for thin film deposition 有权
    铌和钒有机金属前体用于薄膜沉积

    公开(公告)号：US08460989B2

    公开(公告)日：2013-06-11

    申请号：US13123013

    申请日：2009-10-06

    申请人： Nicolas Blasco ,  Anthony Correia-Anacleto ,  Audrey Pinchart ,  Andreas Zauner

    发明人： Nicolas Blasco ,  Anthony Correia-Anacleto ,  Audrey Pinchart ,  Andreas Zauner

    IPC分类号： H01L21/8238 ,  H01L21/4763 ,  C23C16/00 ,  C07F9/00

    CPC分类号： H01L21/02205 ,  C07F9/00 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/3141

    摘要： Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt2)2; (Cp)V(=NtBu)(NMe2)2; (Cp)V(=NtBu)(NEtMe)2; (Cp)V(═NiPr)(NEt2)2; (Cp)V(═NiPr)(NMe2)2; (Cp)V(═NiPr)(NEtMe)2; (Cp)V(═NC5H11)(NEt2)2; (Cp)V(═NC5H11)(NMe2)2; (Cp)V(═NC5H11)(NEtMe)2; (Cp)Nb(=NtBu)(NEt2)2; (Cp)Nb(=NtBu)(NMe2)2; (Cp)Nb(=NtBu)(NEtMe)2; (Cp)Nb(═NiPr)(NEt2)2; (Cp)Nb(═NiPr)(NMe2)2; (Cp)Nb(═NiPr)(NEtMe)2; (Cp)Nb(═NC5H11)(NEt2)2; (Cp)Nb(═NC5H11)(NMe2)2; and (Cp)Nb(═NC5H11)(NEtMe)2 is provided. At least one reaction gas selected from the group consisting of ozone and water is provided. The vapor and the reaction gas react with the substrate according to a deposition process to form the metal-containing layer on at least one surface of the substrate.

    摘要翻译： 公开了在基板上形成含金属层的方法。 包含至少一种选自（Cp）V（= NtBu）（NEt2）2）的前体化合物的蒸气; （Cp）V（= NtBu）（NMe2）2; （Cp）V（= NtBu）（NEtMe）2; （Cp）V（= NiPr）（NEt2）2; （Cp）V（= NiPr）（NMe2）2; （Cp）V（= NiPr）（NEtMe）2; （Cp）V（= NC5H11）（NEt2）2; （Cp）V（= NC5H11）（NMe2）2; （Cp）V（= NC5H11）（NEtMe）2; （Cp）Nb（= NtBu）（NEt2）2; （Cp）Nb（= NtBu）（NMe2）2; （Cp）Nb（= NtBu）（NEtMe）2; （Cp）Nb（= NiPr）（NEt2）2; （Cp）Nb（= NiPr）（NMe2）2; （Cp）Nb（= NiPr）（NEtMe）2; （Cp）Nb（= NC5H11）（NEt2）2; （Cp）Nb（= NC5H11）（NMe2）2; 和（Cp）Nb（= NC5H11）（NEtMe）2。 提供至少一种选自臭氧和水的反应气体。 蒸汽和反应气体根据沉积工艺与基底反应，以在基底的至少一个表面上形成含金属层。

    NIOBIUM AND VANADIUM ORGANOMETALLIC PRECURSORS FOR THIN FILM DEPOSITION
    6.
    发明申请
    NIOBIUM AND VANADIUM ORGANOMETALLIC PRECURSORS FOR THIN FILM DEPOSITION 有权
    用于薄膜沉积的NIOBIUM和VANADIUM ORGANOMETALLIC PRECURSORS

    公开(公告)号：US20110195574A1

    公开(公告)日：2011-08-11

    申请号：US13123013

    申请日：2009-10-06

    申请人： Nicolas Blasco ,  Anthony Correia-Anacleto ,  Audrey Pinchart ,  Andreas Zauner

    发明人： Nicolas Blasco ,  Anthony Correia-Anacleto ,  Audrey Pinchart ,  Andreas Zauner

    IPC分类号： H01L21/3205 ,  C07F9/92

    CPC分类号： H01L21/02205 ,  C07F9/00 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/3141

    摘要： Compound of the formula Cp(R1)mM(NR22)2(═NR3) (I): Wherein: M is a metal independently selected from Vanadium (V) or Niobium (Nb) and m≦5; R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom.

    摘要翻译： 式（Cp）（R1）mM（NR22）2（= NR3）（I）的化合物：其中：M是独立地选自钒（V​​）或铌（Nb）和m＆lt; 1E; 5; R1是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R2是有机配体，每个独立地选自H，包含1至6个碳原子的直链或支链烃基; R3是选自H，包含1至6个碳原子的直链或支链烃基的有机配体。