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1.发明授权Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process 有权使用原子层沉积（ALD）工艺在衬底上形成含钛层的方法公开(公告)号：US08853075B2
公开(公告)日：2014-10-07
申请号：US12920026
申请日：2009-02-13
申请人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
发明人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
IPC分类号： H01L21/4763 , H01J31/12 , H01J29/86
CPC分类号： H01J29/86 , C07F17/00 , C23C16/405 , C23C16/409 , C23C16/45553 , H01J31/127 , H01J2201/30469
摘要： Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.
摘要翻译： 公开了在基底上形成含钛层的方法。 在所公开的方法中，提供了具有式Ti（Me 5 C p）（OR）3的前体化合物的蒸气，其中R选自甲基，乙基或异丙基。 根据原子层沉积工艺使蒸气与基底反应，以在基底表面上形成含钛复合物。
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2.发明申请METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS 有权使用原子层沉积（ALD）工艺在基板上形成含钛的层的方法公开(公告)号：US20110275215A1
公开(公告)日：2011-11-10
申请号：US12920026
申请日：2009-02-13
申请人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
发明人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
IPC分类号： H01L21/3205
CPC分类号： H01J29/86 , C07F17/00 , C23C16/405 , C23C16/409 , C23C16/45553 , H01J31/127 , H01J2201/30469
摘要： A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me5Cp)(OR)3 (I), wherein R is selected in the group consisting in methyl, ethyl, isopropyl; or of the formula Ti(R1Cp)(OR2)3 (II), wherein R1 is selected from the group consisting in H, methyl, ethyl, isopropyl and R2 is independently selected from the group consisting in methyl, ethyl, isopropyl or tert-butyl; b) reacting the vapor comprising the at least one compound of formula (I) or (II) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.
摘要翻译： 一种在基材上形成含钛层的方法，所述方法至少包括以下步骤：a）提供包含至少一种式Ti（Me 5 C p）（OR）3（I）的前体化合物的蒸气，其中R 选自甲基，乙基，异丙基; 其中R 1选自H，甲基，乙基，异丙基和R 2独立地选自甲基，乙基，异丙基或叔丁基， 丁基; b）根据原子层沉积工艺使包含至少一种式（I）或（II）化合物的蒸气与基材反应，以在所述基材的至少一个表面上形成含钽复合物层 。
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公开(公告)号：US10648087B2
公开(公告)日：2020-05-12
申请号：US15774892
申请日：2016-09-01
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Clément Lansalot-Matras , Jooho Lee , Jean-Marc Girard , Nicolas Blasco , Satoko Gatineau
IPC分类号： C23F1/12 , H01L21/311 , H01L21/3213 , H01L21/67 , C23C8/80 , H01L21/02 , B08B9/08
摘要： Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MFx(adduct)n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.
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公开(公告)号：US08367531B1
公开(公告)日：2013-02-05
申请号：US13041154
申请日：2011-03-04
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01J37/3171 , H01L21/26506 , H01L21/26566 , H01L21/2658
摘要： The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
摘要翻译： 本发明提供了可用于半导体材料中的铝植入物的分子。 分子可用于各种掺杂技术，例如离子注入，等离子体掺杂或衍生物方法。
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公开(公告)号：US08343860B1
公开(公告)日：2013-01-01
申请号：US13041127
申请日：2011-03-04
IPC分类号： H01L21/425
CPC分类号： H01L21/2658 , H01L21/26506 , H01L21/26513 , H01L21/26566
摘要： The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
摘要翻译： 本发明为半导体材料中的含碳种类植入物提供具有高碳含量的分子。 分子可用于各种掺杂技术，例如离子注入，等离子体掺杂或衍生物方法。
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6.发明授权公开(公告)号：US10309010B2
公开(公告)日：2019-06-04
申请号：US14765090
申请日：2014-01-31
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Satoko Gatineau , Changhee Ko , Jean-Marc Girard , Julien Gatineau
IPC分类号： C23C16/06 , C07F15/06 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/42 , C23C16/455 , C23C16/28 , H01L21/285 , H01L21/768
摘要： Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R1, R2, R3, R4 and R5 is independently selected from the group consisting of hydrogen and linear, cyclic, or branched hydrocarbon groups; provided that (a) R1≠R2 and/or R3 when R1 and R2 and R3 are a hydrocarbon group; (b) R1 and R2 are a hydrocarbon group when R3 is H; or (c) R1 is a C2-C4 hydrocarbon group when R2 and R3 are H.
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公开(公告)号：US20060198958A1
公开(公告)日：2006-09-07
申请号：US10553573
申请日：2004-04-08
IPC分类号： C23C16/34
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02208 , H01L21/02271 , H01L21/3185
摘要： Methods for the production of silicon nitride films by vapor-phase growth. A hydrazine gas and at least one precursor gas are fed into a reaction chamber containing a substrate. The precursor gas is either a trisilylamine gas or a silylhydrazine gas. A silicone nitride film is formed through the reaction of the hydrazine gas and the precursor gas.
摘要翻译： 通过气相生长生产氮化硅膜的方法。 将肼气体和至少一种前体气体进料到含有底物的反应室中。 前体气体是三甲基胺气体或甲硅烷基肼气体。 通过肼气体和前体气体的反应形成氮化硅膜。
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公开(公告)号：US08357430B2
公开(公告)日：2013-01-22
申请号：US11573727
申请日：2005-08-17
IPC分类号： C23C16/34
CPC分类号： C23C16/345 , H01L21/3185
摘要： (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.
摘要翻译： （问题）为了提供通过气相沉积制造氮化硅膜的方法，在使用三甲胺作为前体的同时，可以生产出显示出优异的膜性能的氮化硅膜，并且可以在相对较低的温度和较高的生长速率下进行。 （溶液）氮化硅膜的制造方法，其特征在于，供给气态三甲胺和气态氮源，所述气态三甲胺和气态氮源包含至少两种选自式（1）的胺类化合物的胺类化合物：NR1R2R3（R1，R2和R3分别为 各自独立地选自氢和C 1-6烃基）转化成反应室，其保持至少一个基底并通过使三甲胺和所述氮源反应在所述至少一个基底上形成氮化硅膜。
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公开(公告)号：US07482286B2
公开(公告)日：2009-01-27
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/469 , H01L21/8242 , H01L21/31 , H01L21/38 , H01L21/22 , H01L21/4763
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译： 通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化 试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。 可以获得MsiN，MSI和/或MSION膜。 这些膜可用作高k电介质膜。
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公开(公告)号：US20080121249A1
公开(公告)日：2008-05-29
申请号：US10583641
申请日：2004-12-10
IPC分类号： B08B5/00
CPC分类号： B08B7/00 , C23C14/564 , C23C16/4405 , C23C16/4412
摘要： To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide.A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.
摘要翻译： 为了提供一种清洁成膜装置的有效方法，以便在所述装置用于形成包含钌或固体氧化钌的膜之后，去除位于成膜装置的构成部件上的钌型沉积物，其中在 钌型沉积物的表面区域最少包含固体氧化钌。 至少其表面区域为固体氧化钌的钌型沉积物与含有包含氢或氢原子的还原物质的还原气体接触，由此将固体氧化钌转化为金属钌。 通过使钌金属与包含含氧化合物的氧化物质的氧化气体接触，随后将该钌金属转化为挥发性氧化钌，并且从成膜设备中除去该挥发性氧化钌。
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