公开(公告)号：US20080241983A1

公开(公告)日：2008-10-02

申请号：US12073393

申请日：2008-03-05

申请人： Satoshi Komada ,  Atsushi Ogawa ,  Hiroki Takaoka

发明人： Satoshi Komada ,  Atsushi Ogawa ,  Hiroki Takaoka

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： Provided is a method of manufacturing a nitride semiconductor light-emitting device including the step of contacting a surfactant material with the surface of an n-type nitride semiconductor layer or the surface of a p-type nitride semiconductor layer before the growth of an active layer, or, with a grown crystal surface during or after the growth of the active layer. According to this manufacturing method, a nitride semiconductor light-emitting device having higher light-emitting efficiency can be obtained.

摘要翻译： 提供一种制造氮化物半导体发光器件的方法，其包括在活性层生长之前使表面活性剂材料与n型氮化物半导体层的表面或p型氮化物半导体层的表面接触的步骤 ，或者在活性层生长期间或之后具有生长的晶体表面。 根据该制造方法，可以获得具有较高发光效率的氮化物半导体发光器件。

公开(公告)号：US07807491B2

公开(公告)日：2010-10-05

申请号：US12073393

申请日：2008-03-05

申请人： Satoshi Komada ,  Atsushi Ogawa ,  Hiroki Takaoka

发明人： Satoshi Komada ,  Atsushi Ogawa ,  Hiroki Takaoka

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： Provided is a method of manufacturing a nitride semiconductor light-emitting device including the step of contacting a surfactant material with the surface of an n-type nitride semiconductor layer or the surface of a p-type nitride semiconductor layer before the growth of an active layer, or, with a grown crystal surface during or after the growth of the active layer. According to this manufacturing method, a nitride semiconductor light-emitting device having higher light-emitting efficiency can be obtained.

摘要翻译： 提供一种制造氮化物半导体发光器件的方法，其包括在活性层生长之前使表面活性剂材料与n型氮化物半导体层的表面或p型氮化物半导体层的表面接触的步骤 ，或者在活性层生长期间或之后具有生长的晶体表面。 根据该制造方法，可以获得具有较高发光效率的氮化物半导体发光器件。

公开(公告)号：US07968360B2

公开(公告)日：2011-06-28

申请号：US12213229

申请日：2008-06-17

申请人： Atsushi Ogawa ,  Satoshi Komada ,  Hiroki Takaoka ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Satoshi Komada ,  Hiroki Takaoka ,  Hiroshi Nakatsu

IPC分类号： H01L21/00

CPC分类号： H01L33/0075 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

摘要： In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer (105) held between an n-type nitride semiconductor layer (103, 104) and a p-type nitride semiconductor layer (106 to 108) on a substrate (101), at least any one of the n-type layer, the active layer and the p-type layer includes a multilayer film structure, and a surfactant material is supplied to a crystal growth surface just before, during or after crystal growth of a layer included in the multilayer film structure.

摘要翻译： 在制造氮化物半导体发光器件的方法中，该氮化物半导体发光器件包括在n型氮化物半导体层（103,104）和p型氮化物半导体层（106至108）之间保持的氮化物半导体有源层（105） 衬底（101）中，n型层，有源层和p型层中的至少任一层包括多层膜结构，并且表面活性剂材料在晶体生长之前，期间或之后提供给晶体生长表面 包含在多层膜结构中的层。

公开(公告)号：US20080311695A1

公开(公告)日：2008-12-18

申请号：US12213229

申请日：2008-06-17

申请人： Atsushi Ogawa ,  Satoshi Komada ,  Hiroki Takaoka ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Satoshi Komada ,  Hiroki Takaoka ,  Hiroshi Nakatsu

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

摘要： In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer (105) held between an n-type nitride semiconductor layer (103, 104) and a p-type nitride semiconductor layer (106 to 108) on a substrate (101), at least any one of the n-type layer, the active layer and the p-type layer includes a multilayer film structure, and a surfactant material is supplied to a crystal growth surface just before, during or after crystal growth of a layer included in the multilayer film structure.

摘要翻译： 在制造氮化物半导体发光器件的方法中，该氮化物半导体发光器件包括在n型氮化物半导体层（103,104）和p型氮化物半导体层（106至108）之间保持的氮化物半导体有源层（105） 衬底（101）中，n型层，有源层和p型层中的至少任一层包括多层膜结构，并且表面活性剂材料在晶体生长之前，期间或之后提供给晶体生长表面 包含在多层膜结构中的层。

公开(公告)号：US07893446B2

公开(公告)日：2011-02-22

申请号：US12022066

申请日：2008-01-29

申请人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/14 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.

摘要翻译： 氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层， 具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。 金属层优选由储氢合金制成。

公开(公告)号：US20080179608A1

公开(公告)日：2008-07-31

申请号：US12022066

申请日：2008-01-29

申请人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/14 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.

摘要翻译： 氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层， 具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。 金属层优选由储氢合金制成。

公开(公告)号：US08350278B2

公开(公告)日：2013-01-08

申请号：US12950747

申请日：2010-11-19

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/382 ,  H01L33/22 ,  H01L33/46

摘要： A nitride semiconductor light-emitting device includes an n type nitride semiconductor layer, a light-emitting layer formed on the n type nitride semiconductor layer, a first p type nitride semiconductor layer formed on the light-emitting layer, an intermediate layer formed on the first p type nitride semiconductor layer to alternately cover and expose a surface of the first p type nitride semiconductor layer, and a second p type nitride semiconductor layer formed on the intermediate layer. The intermediate layer is made of a compound containing Si and N as constituent elements.

摘要翻译： 氮化物半导体发光器件包括n型氮化物半导体层，形成在n型氮化物半导体层上的发光层，形成在发光层上的第一p型氮化物半导体层，形成在该氮化物半导体层上的中间层 第一p型氮化物半导体层，交替地覆盖和暴露第一p型氮化物半导体层的表面，以及形成在中间层上的第二p型氮化物半导体层。 中间层由含有Si和N作为构成元素的化合物制成。

公开(公告)号：US08211726B2

公开(公告)日：2012-07-03

申请号：US11707058

申请日：2007-02-16

申请人： Satoshi Komada ,  Mayuko Fudeta

发明人： Satoshi Komada ,  Mayuko Fudeta

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/0422 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.

摘要翻译： 本发明的目的是提供一种制造具有高发光输出并允许正向电压（Vf）降低的氮化物半导体发光器件的方法。 本发明涉及一种制造氮化物半导体发光器件的方法，所述氮化物半导体发光器件至少包括形成在n型氮化物半导体和p型氮化物半导体之间的n型氮化物半导体，p型氮化物半导体和有源层 其中，所述n型氮化物半导体至少包括n型接触层和n侧GaN层，所述n侧GaN层由单个或多个未掺杂的和/或n型层构成， 方法包括通过有机金属气相沉积形成n侧GaN层的步骤，其生长温度设定在500至1000℃的范围内，使得n侧GaN层形成在n型接触层 和活性层。

公开(公告)号：US08084764B2

公开(公告)日：2011-12-27

申请号：US12076812

申请日：2008-03-24

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L29/06

CPC分类号： H01L33/02 ,  H01L33/04 ,  H01L33/32

摘要： The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer and the active layer, and a second p-type semiconductor layer on the opposite side of the first p-type semiconductor layer from the active layer. Further, the present invention is a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a nitride semiconductor active layer, a first p-type nitride semiconductor layer between the n-type nitride semiconductor layer and the nitride semiconductor active layer, and a second p-type nitride semiconductor layer on the opposite side of the first p-type nitride semiconductor layer from the nitride semiconductor active layer.

摘要翻译： 本发明是一种半导体发光器件，其包括在n型半导体层和有源层之间的n型半导体层，有源层，第一p型半导体层和第二p型半导体层， 第一p型半导体层与有源层相对的一侧。 此外，本发明是一种氮化物半导体发光器件，其包括在n型氮化物半导体层和氮化物半导体有源层之间的n型氮化物半导体层，氮化物半导体有源层，第一p型氮化物半导体层， 以及与所述氮化物半导体活性层在所述第一p型氮化物半导体层相反一侧的第二p型氮化物半导体层。

公开(公告)号：US20080217646A1

公开(公告)日：2008-09-11

申请号：US12073215

申请日：2008-03-03

申请人： Satoshi Komada

发明人： Satoshi Komada

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/025

摘要： The present invention presents a nitride semiconductor light emitting device including a substrate, a first n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer, and a second n-type semiconductor layer, in which the p-type and n-type nitride semiconductor tunnel junction layers form a tunnel junction, at least one of the p-type and n-type nitride semiconductor tunnel junction layers contains In, at least one of In-containing layers contacts with a layer having a larger band gap than the In-containing layer, and at least one of shortest distances between an interface of the In-containing layer and the layer having a larger band gap and an interface of the p-type and n-type nitride semiconductor tunnel junction layers is less than 40 nm.

摘要翻译： 本发明提供一种氮化物半导体发光器件，其包括衬底，第一n型氮化物半导体层，发光层，p型氮化物半导体层，p型氮化物半导体隧道结层，n型 氮化物半导体隧道结层和第二n型半导体层，其中p型和n型氮化物半导体隧道结层形成隧道结，p型和n型氮化物半导体隧道中的至少一种 接合层包含In，所述含In层中的至少一个与具有比所述含In层更大的带隙的层接触，并且所述含In层的界面与所述含有层的层之间的最短距离中的至少一个 较大的带隙和p型和n型氮化物半导体隧道结层的界面小于40nm。