公开(公告)号：US07968360B2

公开(公告)日：2011-06-28

申请号：US12213229

申请日：2008-06-17

申请人： Atsushi Ogawa ,  Satoshi Komada ,  Hiroki Takaoka ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Satoshi Komada ,  Hiroki Takaoka ,  Hiroshi Nakatsu

IPC分类号： H01L21/00

CPC分类号： H01L33/0075 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

摘要： In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer (105) held between an n-type nitride semiconductor layer (103, 104) and a p-type nitride semiconductor layer (106 to 108) on a substrate (101), at least any one of the n-type layer, the active layer and the p-type layer includes a multilayer film structure, and a surfactant material is supplied to a crystal growth surface just before, during or after crystal growth of a layer included in the multilayer film structure.

摘要翻译： 在制造氮化物半导体发光器件的方法中，该氮化物半导体发光器件包括在n型氮化物半导体层（103,104）和p型氮化物半导体层（106至108）之间保持的氮化物半导体有源层（105） 衬底（101）中，n型层，有源层和p型层中的至少任一层包括多层膜结构，并且表面活性剂材料在晶体生长之前，期间或之后提供给晶体生长表面 包含在多层膜结构中的层。

公开(公告)号：US20080311695A1

公开(公告)日：2008-12-18

申请号：US12213229

申请日：2008-06-17

申请人： Atsushi Ogawa ,  Satoshi Komada ,  Hiroki Takaoka ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Satoshi Komada ,  Hiroki Takaoka ,  Hiroshi Nakatsu

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

摘要： In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer (105) held between an n-type nitride semiconductor layer (103, 104) and a p-type nitride semiconductor layer (106 to 108) on a substrate (101), at least any one of the n-type layer, the active layer and the p-type layer includes a multilayer film structure, and a surfactant material is supplied to a crystal growth surface just before, during or after crystal growth of a layer included in the multilayer film structure.

摘要翻译： 在制造氮化物半导体发光器件的方法中，该氮化物半导体发光器件包括在n型氮化物半导体层（103,104）和p型氮化物半导体层（106至108）之间保持的氮化物半导体有源层（105） 衬底（101）中，n型层，有源层和p型层中的至少任一层包括多层膜结构，并且表面活性剂材料在晶体生长之前，期间或之后提供给晶体生长表面 包含在多层膜结构中的层。

公开(公告)号：US07893446B2

公开(公告)日：2011-02-22

申请号：US12022066

申请日：2008-01-29

申请人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/14 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.

摘要翻译： 氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层， 具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。 金属层优选由储氢合金制成。

公开(公告)号：US20080179608A1

公开(公告)日：2008-07-31

申请号：US12022066

申请日：2008-01-29

申请人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

发明人： Atsushi Ogawa ,  Akio Aioi ,  Satoshi Komada ,  Hiroshi Nakatsu

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/14 ,  H01L33/32

摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.

摘要翻译： 氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层， 具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。 金属层优选由储氢合金制成。

公开(公告)号：US07166865B2

公开(公告)日：2007-01-23

申请号：US10957614

申请日：2004-10-05

申请人： Takahisa Kurahashi ,  Tetsurou Murakami ,  Shouichi Ohyama ,  Hiroshi Nakatsu

发明人： Takahisa Kurahashi ,  Tetsurou Murakami ,  Shouichi Ohyama ,  Hiroshi Nakatsu

IPC分类号： H01L29/15

CPC分类号： H01L33/30 ,  H01L33/0079

摘要： There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based semiconductor light emitting device having a contact layer 8 made of (AlyGa1−y)zIn1−zP (0≦y≦1, 0

摘要翻译： 以低成本和高产率提供和制造半导体发光器件，该半导体发光器件不仅可以从其顶表面而且从侧表面提取在发射极层中产生的光并且具有高亮度。 一种AlGaInP基半导体发光器件，其具有由（Al x Ga 1-x Y z）1 In 1中的接触层8制成的接触层8 设置在从发射极层3发射的波长透明的发射极层3和透明基板2之间的-z P（0 <= y <= 1,0

公开(公告)号：US06924502B2

公开(公告)日：2005-08-02

申请号：US10270593

申请日：2002-10-16

申请人： Takahisa Kurahashi ,  Hiroshi Nakatsu ,  Hiroyuki Hosoba ,  Tetsurou Murakami

发明人： Takahisa Kurahashi ,  Hiroshi Nakatsu ,  Hiroyuki Hosoba ,  Tetsurou Murakami

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/28 ,  H01L33/30 ,  H01L33/46 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/10

摘要： A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2λ/n or less, where λ is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2π. The semiconductor light emitting device stably obtains a specified peak wavelength even when there is slight variance in the distance between the upper surface of the multilayer reflection film and the lower surface of the quantum well active layer.

摘要翻译： 半导体发光器件依次在半导体衬底上，多层反射膜，半导体层和量子阱活性层上。 多层反射膜的上表面和量子阱活性层的下表面之间的距离为λλ/ n以下，其中λ为发光波长，n为设置在该多层反射膜之间的半导体层的平均折射率 多层反射膜和量子阱活性层。 由多层反射膜反射的反射光和来自量子阱活性层的发射光之间的相位差为2pi的倍数。 即使在多层反射膜的上表面和量子阱活性层的下表面之间的距离稍微变化的情况下，半导体发光器件也稳定地获得规定的峰值波长。

公开(公告)号：US06501101B2

公开(公告)日：2002-12-31

申请号：US09883367

申请日：2001-06-19

申请人： Tetsurou Murakami ,  Takahisa Kurahashi ,  Shouichi Ohyama ,  Hiroshi Nakatsu

发明人： Tetsurou Murakami ,  Takahisa Kurahashi ,  Shouichi Ohyama ,  Hiroshi Nakatsu

IPC分类号： H01L3112

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/10 ,  H01L33/30

摘要： A light emitting diode comprising a multiple quantum well (MQW) layer as an active layer and a reflecting layer below the active layer, wherein the number and/or total thickness of well layers in the MQW layer is determined such that the MQW layer shows an external quantum efficiency higher than that of an MQW layer including a single well layer.

摘要翻译： 一种包括多量子阱（MQW）层作为有源层的发光二极管和在有源层下面的反射层，其中确定MQW层中的阱层的数量和/或总厚度，使得MQW层显示出 外部量子效率高于包含单一阱层的MQW层的外部量子效率。

公开(公告)号：US06465812B1

公开(公告)日：2002-10-15

申请号：US09671777

申请日：2000-09-27

申请人： Hiroyuki Hosoba ,  Hiroshi Nakatsu ,  Takahisa Kurahashi ,  Tetsuroh Murakami ,  Kazuaki Sasaki ,  Junichi Nakamura

发明人： Hiroyuki Hosoba ,  Hiroshi Nakatsu ,  Takahisa Kurahashi ,  Tetsuroh Murakami ,  Kazuaki Sasaki ,  Junichi Nakamura

IPC分类号： H01L3300

CPC分类号： H01L33/16 ,  H01L33/30 ,  H01S5/3202

摘要： A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of AlaGatIn1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.

摘要翻译： 本发明的半导体发光器件至少包括：主面从[011]取向的（100）面倾斜的GaAs衬底; 设置在GaAs衬底的主平面上的Al x Ga 1-x As（0 <= x <= 1）的第一缓冲层; 设置在第一缓冲层上的AlyGaxIn1-y-zP（0 <= y <= 1和0 <= z <= 1）的第二缓冲层; 提供在第二缓冲层上的AlaGatIn1-a-tP（0≤s≤1且0 <= t <= 1）的第一包层; 设置在所述第一包层上的有源层; 以及设置在所述有源层上的第二覆层，其中所述第一包层的Al含量s大于所述第二缓冲层的Al含量y。

公开(公告)号：US06236477B1

公开(公告)日：2001-05-22

申请号：US09481430

申请日：2000-01-12

申请人： Takehisa Ishihara ,  Hideki Miyuki ,  Kazuhito Nagura ,  Kentaro Terashioma ,  Hiroshi Nakatsu

发明人： Takehisa Ishihara ,  Hideki Miyuki ,  Kazuhito Nagura ,  Kentaro Terashioma ,  Hiroshi Nakatsu

IPC分类号： G02B2712

CPC分类号： G02B27/126 ,  G02B5/045 ,  G02B6/34 ,  G02B6/4206 ,  G02B6/4246 ,  G02B6/4292

摘要： An optical transmission and receiving module includes a light source; a light receiving element; and a light branching element for causing signal light from the light source to be incident on an optical fiber and causing signal light output from the optical fiber to be incident on the light receiving element. The light branching element includes a prism array including a plurality of triangular prisms arranged at substantially an identical pitch on a plane extending substantially perpendicular to an imaginary line connecting the light source and the light receiving element.

摘要翻译： 光传输和接收模块包括光源; 光接收元件; 以及用于使来自光源的信号光入射到光纤上并使得从光纤输出的信号光入射到光接收元件上的光分支元件。 光分支元件包括棱镜阵列，其包括在基本上垂直于连接光源和光接收元件的假想线延伸的平面上以基本相同的间距布置的多个三角棱镜。

公开(公告)号：US5854089A

公开(公告)日：1998-12-29

申请号：US673263

申请日：1996-06-28

申请人： Hiroshi Nakatsu

发明人： Hiroshi Nakatsu

IPC分类号： H01L21/205 ,  C23C16/04 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30 ,  H01L33/34 ,  H01L33/38 ,  H01L21/00

CPC分类号： H01L33/20 ,  C23C16/047 ,  H01L33/0062 ,  Y10S438/956 ,  Y10S438/965 ,  Y10S438/978

摘要： A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconductor layer formed on a region of the substrate shaded by the step portion.

摘要翻译： 一种半导体结构，包括：具有台阶部分的基板; 形成在基板的区域上的第一半导体层，所述第一半导体层通过使用所述台阶部分作为掩模，以与所述突出部分成一定角度的光选择性地照射; 以及形成在由所述台阶部分遮蔽的所述基板的区域上的第二半导体层。