公开(公告)号：US20090127693A1

公开(公告)日：2009-05-21

申请号：US12271398

申请日：2008-11-14

申请人： Satoshi NORO ,  Tomofumi Watanabe

发明人： Satoshi NORO ,  Tomofumi Watanabe

IPC分类号： H01L23/498 ,  H01L31/00

CPC分类号： H04N5/2253 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0652 ,  H01L25/18 ,  H01L27/14618 ,  H01L2224/05553 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2225/0651 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a semiconductor module including multiple semiconductor devices, a signal that flows through a bonding wire connected to one semiconductor device is prevented from acting as noise which affects another semiconductor device, thereby improving the operation reliability of the semiconductor module. A second semiconductor device provided alongside a first semiconductor device includes a current output electrode via which large current is output. The current output electrode is electrically connected to a substrate electrode provided to a first wiring layer via a bonding wire such as a gold wire or the like. The bonding wire is provided across the side E2 which differs from the side E1 that faces the side face F1 of the first semiconductor device. Furthermore, the current output electrode is provided along the side E2.

摘要翻译： 在包括多个半导体器件的半导体模块中，防止流过连接到一个半导体器件的接合线的信号作为影响另一半导体器件的噪声，从而提高半导体模块的操作可靠性。 设置在第一半导体器件旁边的第二半导体器件包括输出大电流的电流输出电极。 电流输出电极通过诸如金线等的接合线电连接到设置在第一布线层上的基板电极。 接合线设置在与面向第一半导体器件的侧面F1的侧面E1不同的侧面E2上。 此外，电流输出电极沿着侧面E2设置。

公开(公告)号：US20090127694A1

公开(公告)日：2009-05-21

申请号：US12271459

申请日：2008-11-14

申请人： Satoshi NORO ,  Tomofumi Watanabe

发明人： Satoshi NORO ,  Tomofumi Watanabe

IPC分类号： H01L23/498 ,  H01L31/00

CPC分类号： H04N5/23248 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/05553 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49175 ,  H01L2224/85 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H04N5/2253 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor module including multiple semiconductor devices prevents a signal that flows through a bonding wire connected to one semiconductor device from acting as noise which affects the other semiconductor devices, thereby improving the operation reliability of the semiconductor module. A second semiconductor device layered on a first semiconductor device includes a current output electrode via which large current is output. The current output electrode is electrically connected to a substrate electrode provided to a first wiring layer via a bonding wire. The bonding wire is provided across the side E1 of the second semiconductor device. A bonding wire connected to the first semiconductor device is provided across a side of the first semiconductor device other than the side F1 that corresponds to the side E1 of the second semiconductor device, i.e., across the side F2, F3, or F4 of the first semiconductor device.

摘要翻译： 包括多个半导体器件的半导体模块防止流过连接到一个半导体器件的接合线的信号作为影响其它半导体器件的噪声，从而提高半导体模块的操作可靠性。 层叠在第一半导体器件上的第二半导体器件包括输出大电流的电流输出电极。 电流输出电极通过接合线电连接到设置到第一布线层的基板电极。 接合线设置在第二半导体器件的E1侧。 连接到第一半导体器件的接合线设置在第一半导体器件的除了与第二半导体器件的侧面E1对应的侧面F1以外的侧面之间，即跨越第一半导体器件的第一半导体器件的侧面F2，F3或F4 半导体器件。