公开(公告)号：US09443827B2

公开(公告)日：2016-09-13

申请号：US14521181

申请日：2014-10-22

申请人： SPANSION LLC

发明人： Kouichi Meguro

IPC分类号： H01L21/8238 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/48 ,  H01L21/50 ,  H01L25/065 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/48 ,  H01L25/10 ,  H01L25/00 ,  H01L21/304 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L21/304 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/481 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/82 ,  H01L24/85 ,  H01L24/91 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13147 ,  H01L2224/16054 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1713 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48096 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/49112 ,  H01L2224/49173 ,  H01L2224/73265 ,  H01L2224/85001 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/18165 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A semiconductor device includes a first semiconductor chip having a pad electrode formed on an upper surface thereof; a resin section sealing the first semiconductor chip with the upper surface and a side surface of the first semiconductor chip being covered and a lower surface of the first semiconductor chip being exposed; a columnar electrode communicating between the upper surface and the lower surface of the resin section with the upper surface and the lower surface of the columnar electrode being exposed on the resin section and at least a part of the side surface of the columnar electrode being covered; and a bonding wire connecting the pad electrode and the columnar electrode with a part of the bonding wire being embedded in the columnar electrode as one end of the bonding wire being exposed on the lower surface of the columnar electrode and the remaining part of the bonding wire being covered with the resin section, and a method for manufacturing the same.

摘要翻译： 半导体器件包括：第一半导体芯片，其具有形成在其上表面上的焊盘电极; 将所述第一半导体芯片与所述第一半导体芯片的上表面和所述第一半导体芯片的侧面进行封装而使所述第一半导体芯片的下表面露出的树脂部， 柱状电极在树脂部分的上表面和下表面之间连通，柱状电极的上表面和下表面暴露在树脂部分上，并且柱状电极的侧表面的至少一部分被覆盖; 以及连接焊盘电极和柱状电极的接合线，一部分接合线被埋入柱状电极中，一方的接合线的一端露出在柱状电极的下表面上，接合线的其余部分 被树脂部覆盖的方法及其制造方法。

公开(公告)号：US20150380344A1

公开(公告)日：2015-12-31

申请号：US14844427

申请日：2015-09-03

申请人： Semiconductor Components Industries, LLC

发明人： Takeshi Susaki ,  Masahito Shindo ,  Kazumi Onda

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49541 ,  B23K20/005 ,  B23K20/106 ,  B23K2101/42 ,  H01L21/4842 ,  H01L21/565 ,  H01L21/82 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49575 ,  H01L23/49589 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/0655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/85099 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00012

摘要： The invention is directed to firm bonding between semiconductor dies etc bonded to a lead frame and wire-bonding portions of the lead frame by ultrasonic Al wire bonding, and the prevention of shortcircuit between the semiconductor dies etc due to a remaining portion of the outer frame of the lead frame after the outer frame is cut. By extending the wire-bonding portion etc on the lead frame in a wire-bonding direction and connecting the wire-bonding portion etc to the outer frame of the lead frame through a connection lead etc, the ultrasonic vibration force in the ultrasonic Al wire bonding is prevented from dispersing and the Al wire and the wire-bonding portion etc are firmly bonded. The outer frame is cut after a resin sealing process is completed. Even when a portion of the outer frame remains on the side surface of the resin package, connection between the connection lead etc and other hanging lead etc are prevented by providing a notch etc in the outer frame between the connection lead etc and the hanging lead etc.

摘要翻译： 本发明涉及通过超声波铝线接合将结合到引线框架和引线框架的引线接合部分的半导体管芯等之间的牢固结合，以及由于外部框架的剩余部分而防止半导体管芯之间的短路 在外框被切割之后的引线框架。 通过在引线框架上引线接合方向延伸引线接合部等，并通过连接引线等将导线接合部等连接到引线框架的外框架上，超声波Al引线接合中的超声波振动力 防止分散，并且Al线和引线接合部等牢固地结合。 在树脂密封过程完成后，外框被切割。 即使当外框的一部分保留在树脂封装的侧表面上时，通过在连接引线等与悬挂引线等之间的外框架中设置切口等来防止连接引线等与其它悬挂引线之间的连接 。

公开(公告)号：US09224677B1

公开(公告)日：2015-12-29

申请号：US13937051

申请日：2013-07-08

申请人： Marvell International Ltd.

发明人： Shiann-Ming Liou ,  Chenglin Liu

IPC分类号： H01L23/02 ,  H01L23/495 ,  H01L21/50

CPC分类号： H01L23/49575 ,  H01L21/50 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49537 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/49425 ,  H01L2224/49429 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： Semiconductor packages and associated techniques are described. A described semiconductor package includes a lead frame; a first wire bond; a second wire bond; a first voltage source to provide a first voltage; a second voltage source to provide a second voltage; a first die pad coupled with the first voltage source via the first wire bond; a second die pad coupled with the second voltage source via the second wire bond; a first die disposed on the first die pad; a second die disposed on the second die pad; and an encapsulant. The first die pad and the second die pad can be electrically isolated from each other such that the first die pad is maintainable at a first potential associated with the first voltage source and the second die pad is maintainable at a second potential associated with the second voltage source.

摘要翻译： 描述了半导体封装和相关技术。 所描述的半导体封装包括引线框架; 第一个线接; 第二个线接; 提供第一电压的第一电压源; 第二电压源以提供第二电压; 经由所述第一引线接合与所述第一电压源耦合的第一管芯焊盘; 通过所述第二引线键与所述第二电压源耦合的第二管芯焊盘; 设置在所述第一管芯焊盘上的第一管芯; 设置在所述第二管芯焊盘上的第二管芯; 和密封剂。 第一管芯焊盘和第二管芯焊盘可以彼此电隔离使得第一管芯焊盘可维持在与第一电压源相关联的第一电位，并且第二管芯焊盘可维持在与第二电压相关联的第二电位 资源。

公开(公告)号：US09159663B2

公开(公告)日：2015-10-13

申请号：US13113560

申请日：2011-05-23

申请人： Satoshi Isa ,  Hiromasa Takeda ,  Kouji Sato

发明人： Satoshi Isa ,  Hiromasa Takeda ,  Kouji Sato

IPC分类号： A63F9/02 ,  A63B71/14 ,  H01L23/498 ,  H01L21/683 ,  H01L23/13 ,  H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49838 ,  H01L21/6836 ,  H01L23/13 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06156 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/49 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06558 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/78 ,  H01L2924/00012

摘要： A semiconductor device comprises a substrate, pluralities of first and second external electrodes formed in two end portions of one surface of the substrate, a first semiconductor chip mounted on the other surface of the substrate, the first semiconductor chip having an electrode pad row formed in one end portion of one surface of the first semiconductor chip and electrically connected to the first external electrodes, the first semiconductor chip being disposed so that the one end portion of the first semiconductor chip is positioned on an end portion on which the first external electrodes of the substrate are formed, and a second semiconductor chip mounted on the first semiconductor chip, the second semiconductor chip having an electrode pad row formed in one end portion of one surface of the second semiconductor chip and electrically connected to the second external electrode, the second semiconductor chip being disposed so that the one end portion of the second semiconductor chip is positioned on an end portion on which the second external electrodes of the substrate are formed.

摘要翻译： 半导体器件包括：衬底，形成在衬底的一个表面的两个端部中的多个第一和第二外部电极，安装在衬底的另一个表面上的第一半导体芯片，第一半导体芯片，其形成有电极焊盘排 第一半导体芯片的一个表面的一个端部电连接到第一外部电极，第一半导体芯片被布置成使得第一半导体芯片的一个端部位于第一半导体芯片的第一外部电极 形成基板，并且安装在第一半导体芯片上的第二半导体芯片，第二半导体芯片具有形成在第二半导体芯片的一个表面的一个端部中并电连接到第二外部电极的电极焊盘列，第二半导体芯片 半导体芯片被布置成使得第二半导体芯片i的一个端部 s位于其上形成有基板的第二外部电极的端部。

公开(公告)号：US08966749B2

公开(公告)日：2015-03-03

申请号：US12510143

申请日：2009-07-27

申请人： Bong Young Kim

发明人： Bong Young Kim

IPC分类号： H05K3/30 ,  H01L23/00 ,  H01L21/683 ,  H05K3/00 ,  H05K3/28

CPC分类号： H01L24/85 ,  H01L21/6835 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48844 ,  H01L2224/83192 ,  H01L2224/85001 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/0052 ,  H05K3/007 ,  H05K3/284 ,  H05K3/305 ,  H05K2203/016 ,  H05K2203/049 ,  Y10T29/4913 ,  Y10T29/49146 ,  H01L2224/78 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/00012

摘要： A manufacturing method for a protection circuit module of a secondary battery is disclosed. The method includes mounting a die type circuit device to an FPCB. The mounting of the circuit device includes bonding the circuit device to the FPCB by wire bonding. The method may further include forming a protective layer on the FPCB to cover the circuit device. The protective layer may be formed by coating insulation resin on the FPCB.

摘要翻译： 公开了二次电池的保护电路模块的制造方法。 该方法包括将芯片型电路装置安装在FPCB上。 电路装置的安装包括通过引线接合将电路装置连接到FPCB。 该方法还可以包括在FPCB上形成保护层以覆盖电路器件。 保护层可以通过在FPCB上涂覆绝缘树脂来形成。

公开(公告)号：US08955219B2

公开(公告)日：2015-02-17

申请号：US12709552

申请日：2010-02-22

申请人： Roman Roth ,  Dirk Siepe

发明人： Roman Roth ,  Dirk Siepe

IPC分类号： H01R43/00 ,  H05K13/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48458 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/78 ,  H01L2224/83801 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85447 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19107 ,  H01L2924/2076 ,  Y10T29/49128 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49169 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2924/01006

摘要： The invention relates to a method for fabricating a bond by providing a body including a metallic surface provided with an inorganic, dielectric protective layer. The protective layer covers at least one surface zone of the metallic surface in which the metallic surface is to be electrically conductive bonded to a contact conductor. To fabricate the bond, a portion of a provided contact conductor above the surface zone is pressed on to the protective layer and the body so that the protective layer is destroyed above the surface zone in achieving an electrically conductive bond between the metallic surface and the contact conductor.

摘要翻译： 本发明涉及通过提供一种包括设置有无机介电保护层的金属表面的主体来制造接合的方法。 保护层覆盖金属表面的至少一个表面区域，其中金属表面将被导电地接合到接触导体。 为了制造粘结，在表面区域上方提供的接触导体的一部分被压到保护层和主体上，使得保护层在表面区域之上被破坏，从而实现金属表面和触点之间的导电结合 导体。

公开(公告)号：US08900993B2

公开(公告)日：2014-12-02

申请号：US13052865

申请日：2011-03-21

申请人： Kouichi Meguro

发明人： Kouichi Meguro

IPC分类号： H01L21/48 ,  H01L21/44 ,  H01L21/50 ,  H01L23/00 ,  H01L21/768 ,  H01L25/065 ,  H01L25/10 ,  H01L23/48 ,  H01L21/683 ,  H01L21/56 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/304 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/481 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/82 ,  H01L24/85 ,  H01L24/91 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13147 ,  H01L2224/16054 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1713 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48096 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/49112 ,  H01L2224/49173 ,  H01L2224/73265 ,  H01L2224/85001 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/18165 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A semiconductor device includes a first semiconductor chip having a pad electrode formed on an upper surface thereof; a resin section sealing the first semiconductor chip with the upper surface and a side surface of the first semiconductor chip being covered and a lower surface of die first semiconductor chip being exposed; a columnar electrode communicating between the upper surface and the lower surface of the resin section with the upper surface and the lower surface of the columnar electrode being exposed on the resin section and at least a part of the side surface of the columnar electrode being covered; and a bonding wire connecting the pad electrode and the columnar electrode with a part of the bonding wire being embedded in the columnar electrode as one end of the bonding wire being exposed on the lower surface of the columnar electrode and the remaining part of the bonding wire being covered with the resin section, and a method for manufacturing the same.

摘要翻译： 半导体器件包括：第一半导体芯片，其具有形成在其上表面上的焊盘电极; 密封第一半导体芯片与上表面和第一半导体芯片的侧表面被覆盖并且裸片第一半导体芯片的下表面被暴露的树脂部分; 柱状电极在树脂部分的上表面和下表面之间连通，柱状电极的上表面和下表面暴露在树脂部分上，并且柱状电极的侧表面的至少一部分被覆盖; 以及连接焊盘电极和柱状电极的接合线，一部分接合线被埋入柱状电极中，一方的接合线的一端露出在柱状电极的下表面上，接合线的其余部分 被树脂部覆盖的方法及其制造方法。

公开(公告)号：US20140206146A1

公开(公告)日：2014-07-24

申请号：US14221667

申请日：2014-03-21

申请人： Siliconware Precision Industries Co., Ltd.

发明人： Pang-Chun Lin ,  Chun-Yuan Li ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC分类号： H01L21/56 ,  H01L21/78

CPC分类号： H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/85001 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

摘要翻译： 具有电连接结构的半导体封装包括：具有管芯焊盘和围绕管芯焊盘的迹线的导电层; 一个芯片 接合线; 具有多个空腔的密封剂，其深度大于管芯焊盘的厚度，以及用于将管芯焊盘和其中的迹线嵌入其中的迹线，以及暴露管芯焊盘和迹线的空腔; 形成在所述空腔中的焊料掩模层，并且具有用于暴露所述迹线端部和所述管芯焊盘的一部分的多个开口; 以及形成在开口中并电连接到迹线端的焊球。 将焊料掩模层与密封剂接合，增强了焊料掩模层的粘合强度，从而延长了水分渗透路径并提高了封装的可靠性。

公开(公告)号：US08785252B2

公开(公告)日：2014-07-22

申请号：US13757231

申请日：2013-02-01

申请人： Masafumi Matsumoto ,  Tatsuya Iwasa ,  Junji Yamada ,  Masaru Furukawa

发明人： Masafumi Matsumoto ,  Tatsuya Iwasa ,  Junji Yamada ,  Masaru Furukawa

IPC分类号： H01L23/00

CPC分类号： H01L24/43 ,  H01L23/053 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/43 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A semiconductor device includes a thermoplastic resin case, a semiconductor chip mounted within the thermoplastic resin case, a metal terminal having a wire bonding surface and an opposing contact surface, and a wire connected between the wire bonding surface and the semiconductor chip. The contact surface of the metal terminal is thermoplastically bonded at an area to the inside of the thermoplastic resin case.

摘要翻译： 半导体器件包括热塑性树脂壳体，安装在热塑性树脂壳体内的半导体芯片，具有引线接合表面和相对接触表面的金属端子，以及连接在引线接合表面和半导体芯片之间的线。 金属端子的接触表面在与热塑性树脂外壳的内侧的区域热塑性地结合。

公开(公告)号：US08759970B2

公开(公告)日：2014-06-24

申请号：US12546463

申请日：2009-08-24

申请人： Salman Akram

发明人： Salman Akram

IPC分类号： H01L23/48

CPC分类号： H01L24/85 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L24/86 ,  H01L2224/02166 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48881 ,  H01L2224/85375 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48781 ,  H01L2224/48681 ,  H01L2224/29099

摘要： An improved wire bond is provided with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductive lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond is described wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

摘要翻译： 改进的引线键合设置有半导体器件的接合焊盘和引线框架的引线指，或者TAB带的改进的导电引线与半导体器件的焊盘焊接。 更具体地，描述了改进的引线键合，其中半导体器件的表面上的接合焊盘包括铜层和至少一层金属和/或至少在铜层和一层之间的材料阻挡层 铜层上的金属形成接合垫。