公开(公告)号：US5506088A

公开(公告)日：1996-04-09

申请号：US336234

申请日：1994-11-03

申请人： Koji Nozaki ,  Ryosuke Tokutomi ,  Yuko Kaimoto ,  Satoshi Takechi

发明人： Koji Nozaki ,  Ryosuke Tokutomi ,  Yuko Kaimoto ,  Satoshi Takechi

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03C1/73

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/143

摘要： Improved chemically amplified resist is provided that comprises 100 parts by weight of a copolymer produced from a first monomer unit having a recurrent acid labile pendant group that changes the polarity of the polymer and a second monomer unit having an alkali-soluble group and 1 to 20 parts by weight of a photo acid generator.

摘要翻译： 提供了改进的化学放大抗蚀剂，其包含100重量份由具有改变聚合物极性的反复酸性不稳定侧基的第一单体单元和具有碱溶性基团的第二单体单元和1至20 重量份的光酸产生剂。

公开(公告)号：US5585219A

公开(公告)日：1996-12-17

申请号：US438916

申请日：1995-05-10

申请人： Yuko Kaimoto ,  Koji Nozaki

发明人： Yuko Kaimoto ,  Koji Nozaki

IPC分类号： G03F7/004 ,  G03F7/027 ,  G03F7/029 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027 ,  G03C1/492

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111 ,  Y10S430/143 ,  Y10S430/146 ,  Y10S430/167 ,  Y10S430/168

摘要： A resist composition and a process for forming a resist pattern using a resist composition are disclosed. The present composition includes 100 parts by weight of a copolymer of a 2-norbornene-2-substituent unit and an acrylic acid ester unit of the formula I; ##STR1## wherein, X is a cyano or chloro group, R is tert-butyl, dimethylbenzyl, or tetrahydropyranyl, m is an integer of 9 to 2390, and n is an integer of 21 to 5180, and 1 to 20 parts by weight of a photo acid generator. A finely-resolved resist pattern with high sensitivity and good dry etch resistance is obtained by the present composition and present process for forming the resist pattern.

摘要翻译： 公开了抗蚀剂组合物和使用抗蚀剂组合物形成抗蚀剂图案的工艺。 本发明的组合物包括100重量份的2-降冰片烯-2-取代基单元和式I的丙烯酸酯单元的共聚物; （I）其中X为氰基或氯基，R为叔丁基，二甲基苄基或四氢吡喃基，m为9〜2390的整数，n为21〜5180的整数，1〜20 重量份的光酸产生剂。 通过本发明的组合物和形成抗蚀剂图案的本发明方法获得了具有高灵敏度和良好的耐干蚀刻电阻的精细分辨的抗蚀剂图案。

公开(公告)号：US5585222A

公开(公告)日：1996-12-17

申请号：US945909

申请日：1992-09-17

申请人： Yuko Kaimoto ,  Koji Nozaki

发明人： Yuko Kaimoto ,  Koji Nozaki

IPC分类号： G03F7/004 ,  G03F7/027 ,  G03F7/029 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027 ,  G03F7/30 ,  G03C5/00 ,  G03F7/38

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111 ,  Y10S430/143 ,  Y10S430/146 ,  Y10S430/167 ,  Y10S430/168

摘要： A resist composition and a process for forming a resist pattern using a resist composition are disclosed. The present composition includes 100 parts by weight of a copolymer of a 2-norbornene-2-substituent unit and an acrylic acid ester unit of the formula I; ##STR1## wherein, X is a cyano or chloro group, R is tert-butyl, dimethylbenzyl, or tetrahydropyranyl, m is an integer of 9 to 2390, and n is an integer of 21 to 5180, and 1 to 20 parts by weight of a photo acid generator. A finely-resolved resist pattern with high sensitivity and good dry etch resistance is obtained by the present composition and present process for forming the resist pattern.

公开(公告)号：US5968713A

公开(公告)日：1999-10-19

申请号：US896833

申请日：1997-07-18

申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

公开(公告)号：US06013416A

公开(公告)日：2000-01-11

申请号：US673739

申请日：1996-06-27

申请人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

发明人： Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Kuramitsu ,  Satoshi Takechi ,  Akiko Kotachi ,  Makoto Takahashi

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.

摘要翻译： 碱可显影的化学放大抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性成膜化合物，其中所述受保护的碱溶性基团的保护部分在酸的作用下被切割 由与所述化合物组合使用的光致酸产生剂产生，从而从碱溶性基团释放保护部分并将所述化合物转化为碱溶性化合物，以及能够在曝光于图案化辐射时分解的光致酸产生剂 产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物特别适合于使用碱性显影剂的准分子激光光刻，并且所形成的抗蚀剂图案可以表现出高灵敏度和优异的耐干蚀刻性而不膨胀。

公开(公告)号：US06329125B2

公开(公告)日：2001-12-11

申请号：US09739259

申请日：2000-12-19

申请人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

发明人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.

公开(公告)号：US06200725B1

公开(公告)日：2001-03-13

申请号：US08969368

申请日：1997-11-28

申请人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

发明人： Satoshi Takechi ,  Akiko Kotachi ,  Koji Nozaki ,  Ei Yano ,  Keiji Watanabe ,  Takahisa Namiki ,  Miwa Igarashi ,  Yoko Makino ,  Makoto Takahashi

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.

摘要翻译： 碱可显影的化学增幅抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性化合物，其中所述被保护的碱溶性基团的保护部分含有与碳原子键合的脂环族烃基 其中R 1'是甲基，乙基，丙基或异丙​​基，并且所述碱溶性基团在与所述化合物组合使用的光致酸产生剂产生的酸作用下被切割，由此释放所述保护部分 从碱溶性基团中转化为碱溶性化合物，以及光致酸发生剂，其能够在暴露于图案化辐射时分解，从而产生能够导致所述保护部分裂解的酸。 抗蚀剂组合物可以表现出高灵敏度（不大于5mJ / cm 2），因此特别适用于ArF光刻，并且还可呈现稳定的图案化性能。

公开(公告)号：US08748077B2

公开(公告)日：2014-06-10

申请号：US13358892

申请日：2012-01-26

申请人： Koji Nozaki ,  Miwa Kozawa

发明人： Koji Nozaki ,  Miwa Kozawa

IPC分类号： G03F7/004 ,  G03F7/40

CPC分类号： H01L21/0273 ,  G03F7/405 ,  H01L21/31144 ,  H01L21/76802

摘要： To provide a resist pattern improving material, containing: water; and benzalkonium chloride represented by the following general formula (1): where n is an integer of 8 to 18.

摘要翻译： 提供抗蚀剂图案改善材料，含有：水; 和由以下通式（1）表示的苯扎氯铵：其中n为8至18的整数。

公开(公告)号：US08476346B2

公开(公告)日：2013-07-02

申请号：US12713876

申请日：2010-02-26

申请人： Miwa Kozawa ,  Koji Nozaki

发明人： Miwa Kozawa ,  Koji Nozaki

IPC分类号： C08K5/15

CPC分类号： H01L21/0273 ,  C08L5/16 ,  C08L29/04 ,  C09D105/16 ,  C09D129/04 ,  G03F7/40 ,  H01L21/31144 ,  H01L21/76816 ,  C08L31/04 ,  C08L39/06

摘要： A resist pattern thickening material containing a resin, a cyclic compound expressed by the general formula 1, at least one of compounds expressed by the general formulae 2 to 3, respectively, and water:

摘要翻译： 含有树脂的抗蚀剂图案增稠材料，由通式1表示的环状化合物，分别由通式2〜3表示的化合物和水中的至少一种：

公开(公告)号：US08449787B2

公开(公告)日：2013-05-28

申请号：US12035832

申请日：2008-02-22

申请人： Tadahiro Imada ,  Yoshihiro Nakata ,  Koji Nozaki

发明人： Tadahiro Imada ,  Yoshihiro Nakata ,  Koji Nozaki

IPC分类号： C03C15/00

CPC分类号： H01L21/67086 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/6708 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76825

摘要： A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution.

摘要翻译： 一种湿式蚀刻方法，其包括在基板上形成绝缘膜，并且在使用蚀刻溶液湿式蚀刻绝缘膜期间，将绝缘膜照射激光。