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    Three dimensional semiconductor on insulator substrate
    2.
    发明授权
    Three dimensional semiconductor on insulator substrate 失效
    三维半导体绝缘体基板

    公开(公告)号：US4834809A

    公开(公告)日：1989-05-30

    申请号：US96758

    申请日：1987-09-09

    申请人： Yoshinobu Kakihara

    发明人： Yoshinobu Kakihara

    IPC分类号： H01L27/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/762 ,  H01L21/84

    CPC分类号： H01L21/02381 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/76294 ,  Y10S148/011 ,  Y10S148/025 ,  Y10S148/071 ,  Y10S148/09 ,  Y10S148/152 ,  Y10S438/967

    摘要： A semiconductor substrate includes: a first monocrystalline semiconductive layer formed on the surface of a crystalline silicon substrate with the intervension of a first insulation film; a second insulation film set to the upper surface of the first monocrystalline semiconductive layer and provided with a plurality of apertures each having a specific pattern; and a second monocrystalline semiconductive layer which is epitaxially grown by the seed crystallization process and provided with the same crystalline characteristics as that of the first monocrystalline semiconductive layer.Accordingly, the preferred embodiment of the present invention provides an extremely useful semiconductor substrate which easily isolates the elements of semiconductor devices between layers of insulating film described above.

    摘要翻译： 半导体衬底包括：第一单晶半导体层，其形成在晶体硅衬底的表面上，并具有第一绝缘膜; 第二绝缘膜，其设置在所述第一单晶半导体层的上表面，并且设置有多个具有特定图案的孔; 以及第二单晶半导体层，其通过晶种结晶工艺外延生长并具有与第一单晶半导体层相同的结晶特性。 因此，本发明的优选实施例提供了一种非常有用的半导体衬底，其容易地隔离上述绝缘膜层之间的半导体器件的元件。

    ZnS:Mn Thin-film electroluminescent element with memory function
    3.
    发明授权
    ZnS:Mn Thin-film electroluminescent element with memory function 失效
    ZnS：Mn具有记忆功能的薄膜电致发光元件

    公开(公告)号：US4394601A

    公开(公告)日：1983-07-19

    申请号：US798008

    申请日：1977-05-18

    申请人： Mikio Takeda ,  Yoshinobu Kakihara ,  Masaru Yoshida ,  Yukihiko Nakata

    发明人： Mikio Takeda ,  Yoshinobu Kakihara ,  Masaru Yoshida ,  Yukihiko Nakata

    IPC分类号： C09K11/57 ,  H05B33/14 ,  H05B33/18 ,  H05B33/22

    CPC分类号： H05B33/14 ,  C09K11/574

    摘要： A ZnS thin-film electroluminescent element which exhibits the hysteresis phenomenon within the light emission versus applied voltage characteristics, the electric current versus applied alternating voltage characteristics, or the electric current phase versus applied alternating voltage characteristics. The ZnS element comprises a ZnS EL thin-film including Mn serving as a luminescent center with a concentration of 0.05-5.0 wt. %, and a pair of dielectric layers made of rare earth oxides or oxides groups of III, IV and V of the Periodic Table. The EL thin-film is sandwiched between the pair of the dielectric layers. The ZnS EL thin-film is made by applying the electron-beam heating evaporation technology to a ZnS pellet.

    摘要翻译： 一种ZnS薄膜电致发光元件，其在发光与施加的电压特性，电流对施加的交流电压特性或电流相位与施加的交变电压特性之间呈现滞后现象。 ZnS元素包括ZnS EL薄膜，其包含Mn作为浓度为0.05-5.0重量％的发光中心。 ％，以及由周期表的III，IV和V族的稀土氧化物或氧化物基团构成的一对电介质层。 EL薄膜夹在该对电介质层之间。 ZnS EL薄膜通过将电子束加热蒸发技术应用于ZnS颗粒而制成。