公开(公告)号：US08592824B2

公开(公告)日：2013-11-26

申请号：US12438396

申请日：2007-08-13

申请人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

发明人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

IPC分类号： H01L29/15

CPC分类号： H01L33/34 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/38

摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

摘要翻译： 提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极 用于将电流注入有源层或有源区，内部量子效率为10％以上。

公开(公告)号：US20100001292A1

公开(公告)日：2010-01-07

申请号：US12438396

申请日：2007-08-13

申请人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

发明人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

IPC分类号： H01L33/00

CPC分类号： H01L33/34 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/38

摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

摘要翻译： 提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极 用于将电流注入有源层或有源区，内部量子效率为10％以上。