公开(公告)号：US09136400B2

公开(公告)日：2015-09-15

申请号：US12934199

申请日：2009-02-27

申请人： Satoshi Tanimoto ,  Norihiko Kiritani ,  Toshiharu Makino ,  Masahiko Ogura ,  Norio Tokuda ,  Hiromitsu Kato ,  Hideyo Okushi ,  Satoshi Yamasaki

发明人： Satoshi Tanimoto ,  Norihiko Kiritani ,  Toshiharu Makino ,  Masahiko Ogura ,  Norio Tokuda ,  Hiromitsu Kato ,  Hideyo Okushi ,  Satoshi Yamasaki

IPC分类号： H01L21/00 ,  H01L29/861 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872

CPC分类号： H01L29/861 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/47 ,  H01L29/475 ,  H01L29/872

摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.

摘要翻译： 在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔 半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响 的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。 本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝 氮化物（AlN）或氮化硼（BN）。 本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料， 只要在如此低的温度下进行操作即可使热激发能足够小。

公开(公告)号：US08624263B2

公开(公告)日：2014-01-07

申请号：US12988089

申请日：2009-03-06

申请人： Hiromitsu Kato ,  Toshiharu Makino ,  Masahiko Ogura ,  Hideyo Okushi ,  Satoshi Yamasaki

发明人： Hiromitsu Kato ,  Toshiharu Makino ,  Masahiko Ogura ,  Hideyo Okushi ,  Satoshi Yamasaki

IPC分类号： H01L29/16 ,  H01L21/02

CPC分类号： C30B29/04 ,  C30B25/02 ,  C30B25/105 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/041 ,  H01L21/042

摘要： The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same. That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the direction while doping with impurities and burying the recessed portion.

摘要翻译： 本发明预期用于提供金刚石半导体器件，其中杂质掺杂的金刚石半导体被埋在所选择的区域中，及其制造方法。 也就是说，具有掺杂金刚石区域的金刚石半导体器件选择性地埋在形成在金刚石衬底中的凹陷部分中; 以及制造金刚石半导体器件的方法，包括以下步骤：在{100}面金刚石半导体衬底上选择性地形成凹陷部分，其中凹陷部分的底面由{100}面和侧面 凹陷部分被{110}面围绕，并且通过在<111>方向外延生长金刚石并掺杂杂质并埋入凹陷部分而形成杂质掺杂金刚石区域。

公开(公告)号：US20120116633A1

公开(公告)日：2012-05-10

申请号：US13354059

申请日：2012-01-19

申请人： Hiromitsu KATO ,  Akitoshi Shimura ,  Eriko Ando ,  Takeiki Aizono

发明人： Hiromitsu KATO ,  Akitoshi Shimura ,  Eriko Ando ,  Takeiki Aizono

IPC分类号： G06F17/00 ,  H04L12/26

CPC分类号： H04L41/0893 ,  H04L12/40006 ,  H04L12/4625 ,  H04L63/102 ,  H04L67/12 ,  H04L69/08 ,  H04L2012/40215 ,  H04L2012/40273 ,  H04W4/12 ,  H04W24/00 ,  H04W74/00 ,  H04W88/16

摘要： An on-vehicle gateway device connected to an information system network and a control system network of a vehicle executes monitoring the status of an information system via an information system access circuit taking charge of message transmission and reception to and from the information system network, and an information system management step to manage information acquired by the information system monitoring, monitoring the status of a control system via a control system access circuit taking charge of message transmission and reception to and from the control system network, and a control system management step to manage information acquired by the control system monitoring, managing policies for access control by the access control circuit controlling data flows between the information system access circuit and the control system access circuit, and determining whether or not to update the policies managed by policy management and to update the policies.

摘要翻译： 连接到信息系统网络和车辆的控制系统网络的车载网关装置通过负责向信息系统网络发送和接收消息的信息系统接入电路执行监视信息系统的状态，以及 信息系统管理步骤，用于管理由信息系统监视获取的信息，并经由控制系统接入电路监控控制系统的状态，该控制系统接入电路负责向控制系统网络发送和接收消息，以及控制系统管理步骤， 管理由控制系统监视获取的信息，控制由访问控制电路访问控制的策略，控制信息系统访问电路与控制系统访问电路之间的数据流，并确定是否更新策略管理所管理的策略，以及 更新策略。

公开(公告)号：US20110175109A1

公开(公告)日：2011-07-21

申请号：US13074284

申请日：2011-03-29

申请人： Hiromitsu KATO ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu KATO ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： H01L29/16

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

公开(公告)号：US20100001292A1

公开(公告)日：2010-01-07

申请号：US12438396

申请日：2007-08-13

申请人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

发明人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

IPC分类号： H01L33/00

CPC分类号： H01L33/34 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/38

摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

摘要翻译： 提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极 用于将电流注入有源层或有源区，内部量子效率为10％以上。

公开(公告)号：US07310812B2

公开(公告)日：2007-12-18

申请号：US10717346

申请日：2003-11-18

申请人： Hiromitsu Kato ,  Shigetoshi Sameshima ,  Katsumi Kawano ,  Takeshi Miyao

发明人： Hiromitsu Kato ,  Shigetoshi Sameshima ,  Katsumi Kawano ,  Takeshi Miyao

IPC分类号： G06F7/04 ,  G06F17/30 ,  G06K9/00 ,  H04L9/32 ,  H04L9/00 ,  H03M1/68 ,  H04K1/00

CPC分类号： G06F21/6218

摘要： A system allows a user to select a service on a device and request a service executing function of a server to carry out the service. An authentication function authenticates the user and searches the functions of devices required in the requested service within the authority given to the user. The function acquires and registers the right to use in a device-configuration managing function through a right-to-use managing function. An adaptor delivering function delivers specifications for setting connections between functions required for execution of the service and a group encryption key generated by a key-generating function to devices. Device coordinating functions set device-embedded functions based on the received specifications. The functions conduct cipher communication with other devices using the key and carry out the service.

摘要翻译： 系统允许用户在设备上选择服务并请求服务器的服务执行功能来执行服务。 验证功能对用户进行认证，并在给予用户的权限内搜索所请求服务中所需设备的功能。 该功能通过权利使用的管理功能获取并注册在设备配置管理功能中使用的权利。 适配器传递功能提供用于设置执行服务所需功能之间的连接的规范和由产生密钥的功能生成的组加密密钥到设备。 设备协调功能根据接收到的规格设置设备嵌入功能。 该功能使用密钥与其他设备进行密码通信，并执行服务。

公开(公告)号：US08876973B2

公开(公告)日：2014-11-04

申请号：US13344104

申请日：2012-01-05

申请人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  B01J3/06 ,  B32B9/00 ,  C30B29/04 ,  C30B25/10 ,  C30B29/40 ,  C30B25/02 ,  C30B25/20 ,  H01L21/02 ,  C30B25/18

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

公开(公告)号：US08375074B2

公开(公告)日：2013-02-12

申请号：US11739120

申请日：2007-04-24

申请人： Hiromitsu Kato ,  Eriko Ando ,  Yasuko Fukuzawa

发明人： Hiromitsu Kato ,  Eriko Ando ,  Yasuko Fukuzawa

IPC分类号： G06F1/02

CPC分类号： G06F21/72 ,  H04L9/0662 ,  H04L9/0869 ,  H04L2209/84

摘要： A terminal to be connected to a network has: a data acquisition unit for acquiring first data from the network; an extraction unit for extracting second data regarding a physical quantity in accordance with the first data; a random number generation unit for generating a random number in accordance with the second data; and an enciphering unit for enciphering the first data in accordance with the random number. The terminal has further a counter unit for counting the number of the first data, wherein the random number generation unit generates a random number in accordance with the second data or a value counted by the counter unit.

摘要翻译： 要连接到网络的终端具有：数据获取单元，用于从网络获取第一数据; 提取单元，用于根据第一数据提取关于物理量的第二数据; 随机数生成单元，用于根据第二数据生成随机数; 以及用于根据随机数对第一数据进行加密的加密单元。 终端还具有用于对第一数据的数量进行计数的计数器单元，其中随机数生成单元根据第二数据或由计数器单元计数的值生成随机数。

公开(公告)号：US20110017991A1

公开(公告)日：2011-01-27

申请号：US12934199

申请日：2009-02-27

申请人： Satoshi Tanimoto ,  Norihiko Kiritani ,  Toshiharu Makino ,  Masahiko Ogura ,  Norio Tokuda ,  Hiromitsu Kato ,  Hideyo Okushi ,  Satoshi Yamasaki

发明人： Satoshi Tanimoto ,  Norihiko Kiritani ,  Toshiharu Makino ,  Masahiko Ogura ,  Norio Tokuda ,  Hiromitsu Kato ,  Hideyo Okushi ,  Satoshi Yamasaki

IPC分类号： H01L29/12 ,  H01L29/06 ,  H01L29/22 ,  H01L29/16 ,  H01L29/24 ,  H01L29/20

CPC分类号： H01L29/861 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/47 ,  H01L29/475 ,  H01L29/872

摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.

摘要翻译： 在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔 半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响 的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。 本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝 氮化物（AlN）或氮化硼（BN）。 本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料， 只要在如此低的温度下进行操作即可使热激发能足够小。

公开(公告)号：US07813852B2

公开(公告)日：2010-10-12

申请号：US11779371

申请日：2007-07-18

申请人： Hiromitsu Kato ,  Akitoshi Shimura ,  Takeiki Aizono ,  Toshiyuki Sakamoto

发明人： Hiromitsu Kato ,  Akitoshi Shimura ,  Takeiki Aizono ,  Toshiyuki Sakamoto

IPC分类号： G01M17/00

CPC分类号： G07C5/085 ,  G07C5/008 ,  G07C5/0808

摘要： In a navigation system integrated with a diagnostic device, an arithmetic and control unit for diagnostic communication makes an inquiry to electronic control units, such as an engine control unit, a transmission control unit and a brake control unit connected a CAN, about data which is used for the diagnosis of trouble causes based on setting information stored in a memory through diagnostic communication. An arithmetic and control unit for navigation system receives messages responding to the inquiry to sift through the data to be collected based on the setting information in the memory and stores the collected information in a hard disk drive device. The setting information is updated by making an inquiry to an external center via a mobile communication network.

摘要翻译： 在与诊断装置集成的导航系统中，用于诊断通信的算术和控制单元询问诸如发动机控制单元，发送控制单元和连接CAN的制动控制单元之类的电子控制单元，关于数据是 用于基于通过诊断通信存储在存储器中的设置信息来诊断故障原因。 用于导航系统的算术和控制单元基于存储器中的设置信息接收响应于询问的消息以筛选要收集的数据，并将收集的信息存储在硬盘驱动器设备中。 通过经由移动通信网络向外部中心进行查询来更新设置信息。