公开(公告)号：US08592824B2

公开(公告)日：2013-11-26

申请号：US12438396

申请日：2007-08-13

申请人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

发明人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

IPC分类号： H01L29/15

CPC分类号： H01L33/34 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/38

摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

摘要翻译： 提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极 用于将电流注入有源层或有源区，内部量子效率为10％以上。

公开(公告)号：US20100001292A1

公开(公告)日：2010-01-07

申请号：US12438396

申请日：2007-08-13

申请人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

发明人： Satoshi Yamasaki ,  Toshiharu Makino ,  Hideyo Ookushi ,  Norio Tokuda ,  Hiromitsu Kato ,  Masahiko Ogura ,  Hideyuki Watanabe ,  Sung-Gi Ri ,  Daisuke Takeuchi

IPC分类号： H01L33/00

CPC分类号： H01L33/34 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/38

摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

摘要翻译： 提供了由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极 用于将电流注入有源层或有源区，内部量子效率为10％以上。

公开(公告)号：US20120103250A1

公开(公告)日：2012-05-03

申请号：US13344104

申请日：2012-01-05

申请人： Hiromitsu KATO ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu KATO ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： C30B25/02

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

公开(公告)号：US08876973B2

公开(公告)日：2014-11-04

申请号：US13344104

申请日：2012-01-05

申请人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  B01J3/06 ,  B32B9/00 ,  C30B29/04 ,  C30B25/10 ,  C30B29/40 ,  C30B25/02 ,  C30B25/20 ,  H01L21/02 ,  C30B25/18

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。

公开(公告)号：US20080193366A1

公开(公告)日：2008-08-14

申请号：US11883488

申请日：2006-01-26

申请人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu Kato ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： C01B31/06 ,  C30B23/00

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorus atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorus compound in the plasma vapor phase, the ratio of phosphorus atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基板（100）取向金刚石，用于化学气相沉积的装置在等离子体气相中提供氢，烃和磷化合物，等离子体气相中磷原子与碳原子的比例不小于0.1％，和 碳原子数与氢原子的比率为0.05％以上，制造方法为。

公开(公告)号：US20110175109A1

公开(公告)日：2011-07-21

申请号：US13074284

申请日：2011-03-29

申请人： Hiromitsu KATO ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

发明人： Hiromitsu KATO ,  Satoshi Yamasaki ,  Hideyo Ookushi ,  Shinichi Shikata

IPC分类号： H01L29/16

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  C30B29/40 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/30

摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。