公开(公告)号：US20110221056A1

公开(公告)日：2011-09-15

申请号：US12976244

申请日：2010-12-22

申请人： Takaaki Miyaji ,  Akihiko Sano ,  Tadashi Inoue ,  Toshiaki Okuno ,  Yoshiki Hada ,  Sayaka Doi ,  Yoshiki Ashihara

发明人： Takaaki Miyaji ,  Akihiko Sano ,  Tadashi Inoue ,  Toshiaki Okuno ,  Yoshiki Hada ,  Sayaka Doi ,  Yoshiki Ashihara

IPC分类号： H01L23/488

CPC分类号： B81B7/007 ,  B81B2207/095

摘要： An electrode structure has a Cu electrode that provided in a surface of a substrate, a diffusion preventing film that is made of a material in which a diffusion coefficient of Sn is equal to or lower than 3×10−23 cm2/sec, the whole Cu electrode being covered with the diffusion preventing film, and a solder layer that is provided above the diffusion preventing film, the solder layer being made of Au—Sn solder.

摘要翻译： 电极结构具有设置在基板的表面的Cu电极，由扩散系数Sn等于或低于3×10-23cm 2 / sec的材料制成的扩散防止膜，整体 Cu电极被扩散防止膜覆盖，以及设置在扩散防止膜上方的焊料层，焊料层由Au-Sn焊料制成。

公开(公告)号：US20110220406A1

公开(公告)日：2011-09-15

申请号：US12977888

申请日：2010-12-23

申请人： Sayaka Doi ,  Toshiaki Okuno ,  Akihiko Sano ,  Takaaki Miyaji ,  Yoshiki Hada

发明人： Sayaka Doi ,  Toshiaki Okuno ,  Akihiko Sano ,  Takaaki Miyaji ,  Yoshiki Hada

IPC分类号： H05K1/11

CPC分类号： H05K3/4038 ,  H01L21/76898 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16238 ,  H01L2924/0002 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05552

摘要： In an electrode portion structure in which an electrode is formed in an end portion of a through-wiring, disconnection is prevented in an electrode portion. A through-hole that vertically pierces a substrate is made in the substrate, and a through-electrode is provided in the through-hole. The through-electrode is projected in s curved-surface manner from an upper surface of the substrate. The upper surface of the substrate 12 is coated with an insulating film, and a contact hole is made in the insulating film while aligned with the through-electrode. An opening diameter of the contact hole is lower than a sectional diameter of the through-electrode, and surroundings of an upper surface of the through-electrode are coated with the contact hole. A thickness Ddiel of the insulating film is equal to or lower than a projection length Dp of the through-electrode from the upper surface of the substrate at an opening edge of the contact hole. Additionally, assuming that Dtsv is a projection length (maximum projection length) of an apex of the through-electrode from the upper surface of the substrate, the projection length Dtsv is adjusted so as to become 0≦Dtsv≦Ddiel+Dp (Dp>0).

摘要翻译： 在电极形成在贯通布线的端部的电极部结构中，在电极部中防止断线。 在衬底中制造垂直穿孔衬底的通孔，并且在通孔中设置通孔。 贯通电极从基板的上表面以弯曲表面的方式突出。 基板12的上表面涂覆有绝缘膜，并且在绝缘膜中形成与通孔对准的接触孔。 接触孔的开口直径低于通孔的截面直径，并且通孔的上表面的周围涂覆有接触孔。 绝缘膜的厚度Ddiel等于或低于在接触孔的开口边缘处的基板的上表面的通孔的突出长度Dp。 另外，假设Dtsv是从基板的上表面的贯通电极的顶点的突出长度（最大突出长度），将投影长度Dtsv调整为0＆lt; nlE; Dtsv＆nlE; Ddiel + Dp（Dp> 0）。