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公开(公告)号：US20050040037A1
公开(公告)日：2005-02-24
申请号：US10644567
申请日：2003-08-20
IPC分类号： C23C14/32 , C23C14/34 , H01L20060101
CPC分类号： C23C14/3478
摘要： This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.
摘要翻译： 本发明提供了使用电子束产生的等离子体在薄膜上沉积薄膜和涂层的方法。 等离子体可用作溅射应用中的离子源，其中离子用于从目标表面释放材料，然后可将其冷凝在基底上以形成膜或涂层。 或者，等离子体可以与现有的沉积源组合，包括基于溅射或蒸发技术的沉积源。 在任一种配置中，等离子体在反应沉积过程中作为生长膜表面的离子和自由基物质的来源。 电子束大面积沉积系统（EBELADS）是生产直到并包括几平方米的薄膜或涂层的新方法。
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2.发明申请公开(公告)号：US20050067099A1
公开(公告)日：2005-03-31
申请号：US10672269
申请日：2003-09-26
申请人： Scott Walton , Robert Meger , Richard Fernsler , Darrin Leonhardt
发明人： Scott Walton , Robert Meger , Richard Fernsler , Darrin Leonhardt
CPC分类号： H01J37/32623 , H01J3/025 , H01J37/3233 , H01J37/3266 , H05H2001/488
摘要： An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time. A method for creating an ion-ion plasma continuous in time.
摘要翻译： 离子离子源，其特征在于包含大量卤素或卤素气体的处理室。 第二室耦合到处理室并且具有产生高能电子束的电子源。 高能电子束被注入到处理室中，在其中被高能电子束成形和限制的装置成形和限制。 当注入到处理室中时，在第二室中产生的高能电子束使卤素气体离子化，从而在处理室中产生致密的离子等离子体，其在时间上是连续的。 一种在时间上产生离子等离子体连续的方法。
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公开(公告)号：USH2212H1
公开(公告)日：2008-04-01
申请号：US10672269
申请日：2003-09-26
摘要： An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time. A method for creating an ion-ion plasma continuous in time.
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公开(公告)号：US20060021968A1
公开(公告)日：2006-02-02
申请号：US11239432
申请日：2005-09-20
申请人： Scott Walton , Robert Meger , Richard Fernsler , Darrin Leenhardt
发明人： Scott Walton , Robert Meger , Richard Fernsler , Darrin Leenhardt
IPC分类号： C23F1/00
CPC分类号： H01J37/32623 , H01J3/025 , H01J37/3233 , H01J37/3266 , H05H2001/488
摘要： An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time.
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公开(公告)号：US20090314633A1
公开(公告)日：2009-12-24
申请号：US12548510
申请日：2009-08-27
CPC分类号： C23C14/3478
摘要： This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.
摘要翻译： 本发明提供了使用电子束产生的等离子体在薄膜上沉积薄膜和涂层的方法。 等离子体可用作溅射应用中的离子源，其中离子用于从目标表面释放材料，然后可将其冷凝在基底上以形成膜或涂层。 或者，等离子体可以与现有的沉积源组合，包括基于溅射或蒸发技术的沉积源。 在任一种配置中，等离子体在反应沉积过程中作为生长膜表面的离子和自由基物质的来源。 电子束大面积沉积系统（EBELADS）是生产直到并包括几平方米的薄膜或涂层的新方法。
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公开(公告)号：US20110308461A1
公开(公告)日：2011-12-22
申请号：US12857560
申请日：2010-08-17
CPC分类号： H01J37/3233 , C23C8/36 , H01J37/32009 , H01J2237/3387 , H05H1/26 , H05H2245/123
摘要： An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
摘要翻译： 电子束增强氮化系统，其使高能电子束通过氮气，形成能够将氮离子和自由基输送到被氮化的衬底的低电子温度等离子体。 衬底可以安装在电极上，并且衬底可被偏置和加热。
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公开(公告)号：US07510666B2
公开(公告)日：2009-03-31
申请号：US11239432
申请日：2005-09-20
IPC分类号： C23F1/00
CPC分类号： H01J37/32623 , H01J3/025 , H01J37/3233 , H01J37/3266 , H05H2001/488
摘要： An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The high energy electron beam is injected into the processing chamber where it is shaped and confined by a means for shaping and confining the high energy electron beam. The high energy electron beam produced in the second chamber when injected into the processing chamber ionizes the halogen gas creating a dense, ion-ion plasma in the processing chamber that is continuous in time.
摘要翻译： 离子离子源，其特征在于包含大量卤素或卤素气体的处理室。 第二室耦合到处理室并且具有产生高能电子束的电子源。 高能电子束被注入到处理室中，在其中被高能电子束成形和限制的装置成形和限制。 当注入到处理室中时，在第二室中产生的高能电子束使卤素气体离子化，从而在处理室中产生致密的离子等离子体，其在时间上是连续的。
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