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公开(公告)号：US08968620B2
公开(公告)日：2015-03-03
申请号：US13095514
申请日：2011-04-27
申请人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
发明人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
CPC分类号： B29C59/02 , B29C45/76 , B29L2007/001 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/877
摘要： Control of lateral strain and lateral strain ratio (dt/db) between template and substrate through the selection of template and/or substrate thicknesses (Tt and/or Tb), control of template and/or substrate back pressure (Pt and/or Pb), and/or selection of material stiffness are described.
摘要翻译： 通过选择模板和/或衬底厚度（Tt和/或Tb），模板和/或衬底背压（Pt和/或Pb）的控制来控制模板和衬底之间的横向应变和横向应变比（dt / db） ）和/或材料刚度的选择。
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公开(公告)号：US20110260361A1
公开(公告)日：2011-10-27
申请号：US13095514
申请日：2011-04-27
申请人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
发明人： Se-Hyuk Im , Mahadevan GanapathiSubramanian , Edward Brian Fletcher , Niyaz Khusnatdinov , Gerard M. Schmid , Mario Johannes Meissl , Anshuman Cherala , Frank Y. Xu , Byung-Jin Choi , Sidlgata V. Sreenivasan
CPC分类号： B29C59/02 , B29C45/76 , B29L2007/001 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S977/877
摘要： Control of lateral strain and lateral strain ratio (dt/db) between template and substrate through the selection of template and/or substrate thicknesses (Tt and/or Tb), control of template and/or substrate back pressure (Pt and/or Pb), and/or selection of material stiffness are described.
摘要翻译： 通过选择模板和/或衬底厚度（Tt和/或Tb），模板和/或衬底背压（Pt和/或Pb）的控制来控制模板和衬底之间的横向应变和横向应变比（dt / db） ）和/或材料刚度的选择。
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公开(公告)号：US09778562B2
公开(公告)日：2017-10-03
申请号：US12275998
申请日：2008-11-21
申请人： Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
发明人： Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/249978
摘要： An imprint lithography template or imprinting stack includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. A porosity of the porous material is at least about 10%. The porous template, the porous imprinting stack, or both may be used in an imprint lithography process to facilitate diffusion of gas trapped between the template and the imprinting stack into the template, the imprinting stack or both, such that polymerizable material between the imprinting stack and the template rapidly forms a substantially continuous layer between the imprinting stack and the template.
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公开(公告)号：US20090140458A1
公开(公告)日：2009-06-04
申请号：US12275998
申请日：2008-11-21
申请人： Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
发明人： Frank Y. Xu , Weijun Liu , Edward Brian Fletcher , Sidlgata V. Sreenivasan , Byung Jin Choi , Niyaz Khusnatdinov , Anshuman Cherala , Kosta S. Selinidis
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10T428/249978
摘要： An imprint lithography template or imprinting stack includes a porous material defining a multiplicity of pores with an average pore size of at least about 0.4 nm. A porosity of the porous material is at least about 10%. The porous template, the porous imprinting stack, or both may be used in an imprint lithography process to facilitate diffusion of gas trapped between the template and the imprinting stack into the template, the imprinting stack or both, such that polymerizable material between the imprinting stack and the template rapidly forms a substantially continuous layer between the imprinting stack and the template.
摘要翻译： 压印光刻模板或压印叠层包括限定平均孔径至少约0.4nm的多个孔的多孔材料。 多孔材料的孔隙率至少约为10％。 多孔模板，多孔印迹叠层或两者可用于压印光刻工艺，以便于将模板和压印叠层之间的气体扩散到模板，压印叠层或两者中，使得压印叠层之间的可聚合材料 并且模板在压印堆栈和模板之间快速形成基本上连续的层。
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公开(公告)号：US08652393B2
公开(公告)日：2014-02-18
申请号：US12604517
申请日：2009-10-23
申请人： Niyaz Khusnatdinov , Frank Y. Xu , Mario Johannes Meissl , Michael N. Miller , Ecron D. Thompson , Gerard M. Schmid , Pawan Kumar Nimmakayala , Xiaoming Lu , Byung-Jin Choi
发明人： Niyaz Khusnatdinov , Frank Y. Xu , Mario Johannes Meissl , Michael N. Miller , Ecron D. Thompson , Gerard M. Schmid , Pawan Kumar Nimmakayala , Xiaoming Lu , Byung-Jin Choi
IPC分类号： B29C45/76
CPC分类号： B29C37/0003 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process.
摘要翻译： 描述了在压印光刻工艺的分离过程期间改进鲁棒层分离的系统和方法。 包括在待印刷的基底与模板之间匹配应变的方法，改变或改变在分离期间施加到模板和/或基底的力，或改变或改变分离过程的动力学。
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6.发明申请公开(公告)号：US20140117574A1
公开(公告)日：2014-05-01
申请号：US14150261
申请日：2014-01-08
申请人： Niyaz Khusnatdinov , Frank Y. Xu , Mario Johannes Meissl , Michael N. Miller , Ecron D. Thompson , Gerard M. Schmid , Pawan Kumar Nimmakayala , Xiaoming Lu , Byung- Jin Choi
发明人： Niyaz Khusnatdinov , Frank Y. Xu , Mario Johannes Meissl , Michael N. Miller , Ecron D. Thompson , Gerard M. Schmid , Pawan Kumar Nimmakayala , Xiaoming Lu , Byung- Jin Choi
CPC分类号： B29C37/0003 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process.
摘要翻译： 描述了在压印光刻工艺的分离过程期间改进鲁棒层分离的系统和方法。 包括在待印刷的基底与模板之间匹配应变的方法，改变或改变在分离期间施加到模板和/或基底的力，或改变或改变分离过程的动力学。
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公开(公告)号：US20100102469A1
公开(公告)日：2010-04-29
申请号：US12604517
申请日：2009-10-23
申请人： Niyaz Khusnatdinov , Frank Y. Xu , Mario Johannes Meissl , Michael N. Miller , Ecron D. Thompson , Gerard M. Schmid , Pawan Kumar Nimmakayala , Xiaoming Lu , Byung-Jin Choi
发明人： Niyaz Khusnatdinov , Frank Y. Xu , Mario Johannes Meissl , Michael N. Miller , Ecron D. Thompson , Gerard M. Schmid , Pawan Kumar Nimmakayala , Xiaoming Lu , Byung-Jin Choi
IPC分类号： B29C45/76
CPC分类号： B29C37/0003 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process.
摘要翻译： 描述了在压印光刻工艺的分离过程期间改进鲁棒层分离的系统和方法。 包括在待印刷的基底与模板之间匹配应变的方法，改变或改变在分离期间施加到模板和/或基底的力，或改变或改变分离过程的动力学。
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公开(公告)号：US08980751B2
公开(公告)日：2015-03-17
申请号：US13014508
申请日：2011-01-26
申请人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
发明人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/42
摘要： Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.
摘要翻译： 可以通过暴露于受控组合物的气体气氛中的来自能量源的真空紫外（VUV）辐射来去除衬底上的聚合材料。 在这种去除之后，还描述了用于纳米压印的附加蚀刻技术。
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公开(公告)号：US20110183521A1
公开(公告)日：2011-07-28
申请号：US13014508
申请日：2011-01-26
申请人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
发明人： Gerard M. Schmid , Michael N. Miller , Byung-Jin Choi , Douglas J. Resnick , Sidlgata V. Sreenivasan , Frank Y. Xu , Darren D. Donaldson
IPC分类号： H01L21/311 , H01J37/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/42
摘要： Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.
摘要翻译： 可以通过暴露于受控组合物的气体气氛中的来自能量源的真空紫外（VUV）辐射来去除衬底上的聚合材料。 在这种去除之后，还描述了用于纳米压印的另外的蚀刻技术。
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公开(公告)号：US08545709B2
公开(公告)日：2013-10-01
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： C03C15/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译： 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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