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    Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof
    3.
    发明授权
    Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof 失效
    精细二氧化铈微粒用于化学机械抛光及其制备方法

    公开(公告)号：US07754168B2

    公开(公告)日：2010-07-13

    申请号：US10557940

    申请日：2004-05-21

    申请人： Se-Woong Park ,  Wan-Jae Myeong ,  Jin-Soo Baik ,  Chang-Mo Chung ,  Kyu-Ho Song

    发明人： Se-Woong Park ,  Wan-Jae Myeong ,  Jin-Soo Baik ,  Chang-Mo Chung ,  Kyu-Ho Song

    IPC分类号： C01F17/00 ,  B24D3/00

    CPC分类号： C09K3/1463 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/80 ,  C01P2006/90 ,  C03C19/00 ,  C09K3/1409

    摘要： Disclosed are a concentrate of fine ceria particles for chemical mechanical polishing, and a method of preparing the same. The method includes reacting a reactant mixture comprising i) water, ii) an aqueous solution of water-soluble cerium salt compound, and iii) ammonia or ammonium salt at a reaction temperature of 250-700? under a reaction pressure of 180-550 bar for 0.01 sec to 10 min in a continuous reactor to obtain a solution containing the fine ceria particles, the cerium salt compound being contained at an amount of 0.01 to 20 wt % in the reactant mixture; and concentrating the solution containing the fine ceria particles in a concentrator having a filter with a pore size of 0.01 to 10?. The concentrate is advantageous in that a CMP slurry and a dispersing solution are easily produced by diluting the concentrate and adding an additive to the concentrate.

    摘要翻译： 公开了用于化学机械抛光的精细二氧化铈微粒的浓缩物及其制备方法。 该方法包括使反应混合物反应，该反应混合物包括：i）水，ii）水溶性铈盐化合物的水溶液，和iii）氨或铵盐，反应温度为250-700℃， 在连续反应器中在180-550巴的反应压力下进行0.01秒至10分钟，以获得含有细小二氧化铈颗粒的溶液，所述铈盐化合物在反应物混合物中的含量为0.01-20重量％; 并将含有细小二氧化铈颗粒的溶液浓缩在具有孔径为0.01至10埃的过滤器的浓缩器中。 浓缩物的优点在于通过稀释浓缩物并向浓缩物中加入添加剂容易地制备CMP浆料和分散溶液。

    Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof
    4.
    发明申请
    Concentrate of fine ceria particles for chemical mechanical polishing and preparing method thereof 失效
    精细二氧化铈微粒用于化学机械抛光及其制备方法

    公开(公告)号：US20070212289A1

    公开(公告)日：2007-09-13

    申请号：US10557940

    申请日：2004-05-21

    申请人： Se-Woong Park ,  Wan-Jae Myeong ,  Jin-Soo Baik ,  Chang-Mo Chung

    发明人： Se-Woong Park ,  Wan-Jae Myeong ,  Jin-Soo Baik ,  Chang-Mo Chung

    IPC分类号： C01F17/00

    CPC分类号： C09K3/1463 ,  B82Y30/00 ,  C01F17/0043 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/80 ,  C01P2006/90 ,  C03C19/00 ,  C09K3/1409

    摘要： Disclosed are a concentrate of fine ceria particles for chemical mechanical polishing, and a method of preparing the same. The method includes reacting a reactant mixture comprising i) water, ii) an aqueous solution of water-soluble cerium salt compound, and iii) ammonia or ammonium salt at a reaction temperature of 250-700 ? under a reaction pressure of 180-550 bar for 0.01 sec to 10 min in a continuous reactor to obtain a solution containing the fine ceria particles, the cerium salt compound being contained at an amount of 0.01 to 20 wt % in the reactant mixture; and concentrating the solution containing the fine ceria particles in a concentrator having a filter with a pore size of 0.01 to 10 ?. The concentrate is advantageous in that a CMP slurry and a dispersing solution are easily produced by diluting the concentrate and adding an additive to the concentrate.

    摘要翻译： 公开了用于化学机械抛光的精细二氧化铈微粒的浓缩物及其制备方法。 该方法包括使反应混合物反应，该反应混合物包括：i）水，ii）水溶性铈盐化合物的水溶液，和iii）氨或铵盐，反应温度为250-700℃， 在连续反应器中在180-550巴的反应压力下进行0.01秒至10分钟，以获得含有细小二氧化铈颗粒的溶液，所述铈盐化合物在反应物混合物中的含量为0.01-20重量％; 并将含有细小二氧化铈颗粒的溶液浓缩在具有孔径为0.01至10 6的过滤器的浓缩器中。 浓缩物的优点在于通过稀释浓缩物并向浓缩物中加入添加剂容易地制备CMP浆料和分散溶液。

    Process for preparing fine metal oxide particles
    5.
    发明授权
    Process for preparing fine metal oxide particles 有权
    金属氧化物微粒的制备方法

    公开(公告)号：US07235224B2

    公开(公告)日：2007-06-26

    申请号：US10521642

    申请日：2003-07-08

    申请人： Wan-Jae Myeong ,  Jin-Soo Baik ,  Se-Woong Park ,  Chang-Mo Chung ,  Kyu-Ho Song

    发明人： Wan-Jae Myeong ,  Jin-Soo Baik ,  Se-Woong Park ,  Chang-Mo Chung ,  Kyu-Ho Song

    IPC分类号： C01G1/00

    CPC分类号： C01G49/0036 ,  B82Y30/00 ,  C01B13/366 ,  C01F17/0043 ,  C01G1/02 ,  C01G9/02 ,  C01G51/42 ,  C01P2004/20 ,  C01P2004/41 ,  C01P2004/62 ,  C01P2004/64 ,  Y02P20/544 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/811

    摘要： Disclosed is a process for preparing fine metal oxide particles, comprising the following steps of reacting a reactant mixture comprising i) water, ii) at least one water-soluble metal nitrate and iii) ammonia or ammonium salt at 250–700° C. under 180–550 bar for 0.01 sec to 10 min in a reaction zone to synthesize the metal oxide particles, the metal nitrate being contained at an amount of 0.01–20 wt % in the reactant mixture; and separating and recovering the metal oxide particles from the resulting reaction products. According to the present invention, nano-sized metal oxide particles are synthesized, while the harmful by-products generated concurrently therewith are effectively decomposed in the same reactor.

    摘要翻译： 公开了一种制备金属氧化物微粒的方法，包括以下步骤：使反应物混合物反应，所述反应物混合物包含i）水，ii）至少一种水溶性金属硝酸盐和iii）氨或铵盐，在250-700℃下 180-550巴在反应区中0.01秒至10分钟以合成金属氧化物颗粒，在反应混合物中含有0.01-20重量％的金属硝酸盐; 并从所得反应产物中分离和回收金属氧化物颗粒。 根据本发明，合成纳米尺寸金属氧化物颗粒，同时产生的有害副产物在同一反应器中有效分解。

    Process for preparing fine metal oxide particles
    7.
    发明申请
    Process for preparing fine metal oxide particles 有权
    金属氧化物微粒的制备方法

    公开(公告)号：US20060182677A1

    公开(公告)日：2006-08-17

    申请号：US10521642

    申请日：2003-07-08

    申请人： Wan-Jae Myeong ,  Jin-Soo Baik ,  Se-Woong Park ,  Chnag-Mo Chung ,  Kyu-Ho Song

    发明人： Wan-Jae Myeong ,  Jin-Soo Baik ,  Se-Woong Park ,  Chnag-Mo Chung ,  Kyu-Ho Song

    IPC分类号： C01F17/00

    CPC分类号： C01G49/0036 ,  B82Y30/00 ,  C01B13/366 ,  C01F17/0043 ,  C01G1/02 ,  C01G9/02 ,  C01G51/42 ,  C01P2004/20 ,  C01P2004/41 ,  C01P2004/62 ,  C01P2004/64 ,  Y02P20/544 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/811

    摘要： Disclosed is a process for preparing fine metal oxide particles, comprising the following steps of reacting a reactant mixture comprising i) water, ii) at least one water-soluble metal nitrate and iii) ammonia or ammonium salt at 250-700° C. under 180-550 bar for 0.01 sec to 10 min in a reaction zone to synthesize the metal oxide particles, the metal nitrate being contained at an amount of 0.01-20 wt % in the reactant mixture; and separating and recovering the metal oxide particles from the resulting reaction products. According to the present invention, nano-sized metal oxide particles are synthesized, while the harmful by-products generated concurrently therewith are effectively decomposed in the same reactor.

    摘要翻译： 公开了一种制备金属氧化物微粒的方法，包括以下步骤：使反应物混合物反应，所述反应物混合物包含i）水，ii）至少一种水溶性金属硝酸盐和iii）氨或铵盐，在250-700℃下 180-550巴在反应区中0.01秒至10分钟以合成金属氧化物颗粒，在反应混合物中含有0.01-20重量％的金属硝酸盐; 并从所得反应产物中分离和回收金属氧化物颗粒。 根据本发明，合成纳米尺寸金属氧化物颗粒，同时产生的有害副产物在同一反应器中有效分解。

    Semiconductor structures and methods of manufacturing the same
    8.
    发明授权
    Semiconductor structures and methods of manufacturing the same 有权
    半导体结构及其制造方法

    公开(公告)号：US09379003B2

    公开(公告)日：2016-06-28

    申请号：US14053932

    申请日：2013-10-15

    申请人： Kil-Ho Lee ,  Se-Woong Park ,  Ki-Joon Kim

    发明人： Kil-Ho Lee ,  Se-Woong Park ,  Ki-Joon Kim

    IPC分类号： H01L23/58 ,  H01L21/768 ,  H01L23/528

    CPC分类号： H01L21/7681 ,  H01L21/76804 ,  H01L21/76808 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.

    摘要翻译： 公开了一种半导体器件和形成半导体器件的方法。 在该方法中，在衬底上形成诸如绝缘中间层的层。 在该层中形成第一沟槽，并且在第一沟槽中形成掩模层。 掩模层具有从第一沟槽的底表面到掩模层的顶部的第一厚度。 图案化掩模层以形成至少部分地暴露第一沟槽的侧壁的掩模。 与第一沟槽的暴露的侧壁相邻的掩模的一部分具有小于第一厚度的第二厚度。 使用掩模作为蚀刻掩模蚀刻该层以形成第二沟槽。 第二沟槽与第一沟槽流体连通。 在第一沟槽和第二沟槽中形成导电图案。

    Iris recognition system
    9.
    发明授权
    Iris recognition system 有权
    虹膜识别系统

    公开(公告)号：US07215797B2

    公开(公告)日：2007-05-08

    申请号：US09773540

    申请日：2001-02-02

    申请人： Se-Woong Park

    发明人： Se-Woong Park

    IPC分类号： G06K9/00

    CPC分类号： G06K9/00597

    摘要： An iris recognition apparatus, includes a guidance unit for guiding the position of an eye relative to the apparatus, and an image recognition unit for recognizing the image of an iris passed through the guidance unit. The apparatus also includes an optical axis adjustment unit for aligning the optical axes of the image recognition unit and guidance unit. The optical axis adjustment unit adjusts the optical axis of the image recognition unit by moving the image recognition unit vertically and horizontally.

    摘要翻译： 一种虹膜识别装置，包括用于引导眼睛相对于装置的位置的引导单元，以及用于识别通过引导单元的虹膜的图像的图像识别单元。 该装置还包括用于对准图像识别单元和引导单元的光轴的光轴调节单元。 光轴调整单元通过垂直和水平地移动图像识别单元来调整图像识别单元的光轴。

    Nonvolatile memory devices and methods of fabricating the same
    10.
    发明授权
    Nonvolatile memory devices and methods of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US09087871B2

    公开(公告)日：2015-07-21

    申请号：US13946307

    申请日：2013-07-19

    申请人： Kil-Ho Lee ,  Ki-Joon Kim ,  Se-Woong Park

    发明人： Kil-Ho Lee ,  Ki-Joon Kim ,  Se-Woong Park

    IPC分类号： H01L21/311 ,  H01L21/762 ,  H01L21/768 ,  H01L27/22 ,  H01L43/08

    CPC分类号： H01L21/76224 ,  H01L21/76805 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76832 ,  H01L27/228 ,  H01L43/08

    摘要： Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion.

    摘要翻译： 非易失性存储器件及其制造方法包括：在衬底的第一区域中形成晶体管，形成连接到晶体管的触点，形成二维地设置在第二区域中的信息存储部分 的基板，顺序地形成覆盖接触的信息存储部分的停止膜和层间绝缘膜，形成在接触件上露出停止膜的第一沟槽，并形成延伸穿过停止膜的第二沟槽 暴露触点，其中第一沟槽的底表面低于信息存储部分的底面。