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    Method for producing a photovoltaic solar cell
    1.
    发明授权
    Method for producing a photovoltaic solar cell 有权
    光伏太阳能电池的制造方法

    公开(公告)号：US09023682B2

    公开(公告)日：2015-05-05

    申请号：US13704683

    申请日：2011-06-16

    申请人： Sebastian Mack ,  Ulrich Jager ,  Andreas Wolf ,  Daniel Biro ,  Ralf Preu ,  Gero Kastner

    发明人： Sebastian Mack ,  Ulrich Jager ,  Andreas Wolf ,  Daniel Biro ,  Ralf Preu ,  Gero Kastner

    IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/225 ,  H01L21/268 ,  H01L31/0224 ,  H01L31/068

    CPC分类号： H01L31/1864 ,  H01L21/2255 ,  H01L21/268 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate via thermal oxidation.

    摘要翻译： 一种光伏太阳能电池的制造方法，包括以下步骤：A.将半导体衬底的前面（2） 通过在第一低掺杂区域（4）和第一低掺杂区域（3）内产生第一低掺杂区域（4）和局部高掺杂区域（3），在半导体衬底的前面（2）上产生选择性发射极掺杂， 地区; 至少在局部高掺杂区域中至少施加至少一个金属发射极接触结构至少一个金属发射极接触结构，其中在方法步骤B和C之间，相应的氧化硅层（5a，5b） ）通过热氧化同时在半导体衬底的前后产生在方法步骤B1中。

    METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL
    2.
    发明申请
    METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL 有权
    生产光伏太阳能电池的方法

    公开(公告)号：US20130095595A1

    公开(公告)日：2013-04-18

    申请号：US13704683

    申请日：2011-06-16

    申请人： Sebastian Mack ,  Ulrich Jager ,  Andreas Wolf ,  Daniel Biro ,  Ralf Preu ,  Gero Kastner

    发明人： Sebastian Mack ,  Ulrich Jager ,  Andreas Wolf ,  Daniel Biro ,  Ralf Preu ,  Gero Kastner

    IPC分类号： H01L31/18

    CPC分类号： H01L31/1864 ,  H01L21/2255 ,  H01L21/268 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate via thermal oxidation.

    摘要翻译： 一种光伏太阳能电池的制造方法，包括以下步骤：A.将半导体衬底的前面（2） 通过在第一低掺杂区域（4）和第一低掺杂区域（3）内产生第一低掺杂区域（4）和局部高掺杂区域（3），在半导体衬底的前面（2）上产生选择性发射极掺杂， 地区; 至少在局部高掺杂区域中至少施加至少一个金属发射极接触结构至少一个金属发射极接触结构，其中在方法步骤B和C之间，相应的氧化硅层（5a，5b） ）通过热氧化同时在半导体衬底的前后产生在方法步骤B1中。

    Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell
    3.
    发明授权
    Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell 有权
    为了制造光伏太阳能电池，在半导体衬底中制造选择性掺杂结构的方法

    公开(公告)号：US08927317B2

    公开(公告)日：2015-01-06

    申请号：US13805111

    申请日：2011-06-16

    申请人： Ulrich Jager ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

    发明人： Ulrich Jager ,  Daniel Biro ,  Anne-Kristin Volk ,  Johannes Seiffe ,  Sebastian Mack ,  Andreas Wolf ,  Ralf Preu

    IPC分类号： H01L31/18 ,  H01L21/225 ,  H01L21/268 ,  H01L31/0224 ,  H01L31/068

    CPC分类号： H01L31/18 ,  H01L21/2254 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/547

    摘要： A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

    摘要翻译： 一种用于在半导体衬底中产生选择性掺杂结构的方法，以便产生光伏太阳能电池。 该方法包括以下步骤：A）将掺杂层（2）施加到半导体衬底的发射极侧，B）局部加热掺杂层（2）的熔化区域和位于半导体衬底下方的半导体衬底的熔化区域 掺杂层（2），使得掺杂剂通过液 - 液扩散从掺杂层（2）扩散到熔融的半导体衬底中，使得在熔融混合物固化后产生高掺杂区域（3），C）产生 通过全面加热半导体衬底，平面低掺杂区域，D）去除掺杂层（2），以及E）以掺杂侧的半导体衬底的一部分去除或转换半导体衬底的一部分， 靠近表面的高掺杂区域被去除或被转换成不导电的层。

    Radiation-curable acrylates with built-in photoinitiators
    5.
    发明授权
    Radiation-curable acrylates with built-in photoinitiators 失效
    具有内置光引发剂的可辐射固化的丙烯酸酯

    公开(公告)号：US5741829A

    公开(公告)日：1998-04-21

    申请号：US674832

    申请日：1996-07-03

    申请人： Wolfgang Reich ,  Erich Beck ,  Ulrich Jager ,  Reinhold Schwalm

    发明人： Wolfgang Reich ,  Erich Beck ,  Ulrich Jager ,  Reinhold Schwalm

    IPC分类号： C07C68/02 ,  C07C69/96 ,  C08F2/48 ,  C08F2/50 ,  C08F20/26 ,  C08F20/28 ,  C08G00/00 ,  C08F18/24

    CPC分类号： C07C69/96 ,  Y10S522/905

    摘要： Radiation-curable (meth)acrylates obtainable by reacting compounds of the formula ##STR1## in which R is C.sub.1 -C.sub.4 -alkyl, aryl or R.sup.1 and R.sup.1 is ##STR2## in which R.sup.2 to R.sup.6 independently of one another are H, C.sub.1 -C.sub.4 -alkyl, C.sub.1 -C.sub.4 -alkoxy, OH, phenyl, SH, SCH.sub.3, SC.sub.2 H.sub.5, F, Cl, Br, CN, COOH, COO--(C.sub.1 -C.sub.17 -alkyl), COO--(C.sub.5 -C.sub.10 -aryl), CF.sub.3, N(alkyl).sub.2, N(alkyl)(aryl), N(aryl).sub.2, N.sup..sym. (alkyl).sub.3 A.sup..crclbar., N.sup..sym. H(alkyl).sub.2 A.sup..crclbar., A.sup..crclbar. is the anion of an acid, and alkyl or aryl, unless indicated otherwise, is C.sub.1 -C.sub.10 -alkyl or C.sub.5 -C.sub.10 -aryl, respectively, and at least one but not more than 3 of R.sup.2 to R.sup.6 are ##STR3## with hydroxy(meth)acrylates containing at least 1 free hydroxyl group and at least 2 (meth)acrylic groups in the molecule.

    摘要翻译： 其中R为C 1 -C 4 - 烷基，芳基或R 1和R 1的式Ⅰ'化合物是其中R 2至R 6彼此独立地为H的可辐射固化（甲基）丙烯酸酯， C 1 -C 4烷基，C 1 -C 4 - 烷氧基，OH，苯基，SH，SCH 3，SC 2 H 5，F，Cl，Br，CN，COOH，COO-（C 1 -C 17 - 烷基） ），CF 3，N（烷基）2，N（烷基）（芳基），N（芳基）2，N（+）（烷基）3A（ - ），N（+）H （ - ）是酸的阴离子，除非另有说明，烷基或芳基分别为C 1 -C 10 - 烷基或C 5 -C 10 - 芳基，并且至少一个但不多于3个R 2至R 6为

    Method for local high-doping and contacting of a semiconductor structure which comprises a solar cell or a precursor of a solar cell
    6.
    发明授权
    Method for local high-doping and contacting of a semiconductor structure which comprises a solar cell or a precursor of a solar cell 有权

    公开(公告)号：US08900908B2

    公开(公告)日：2014-12-02

    申请号：US13575446

    申请日：2011-01-18

    申请人： Dominik Suwito ,  Jan Benick ,  Ulrich Jager

    发明人： Dominik Suwito ,  Jan Benick ,  Ulrich Jager

    IPC分类号： H01L21/00 ,  H01L31/061 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L21/268

    CPC分类号： H01L31/1804 ,  H01L21/268 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/061 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention relates to a method for local high-doping and contacting of a semiconductor structure which is a solar cell or a precursor of a solar cell and has a silicon semiconductor substrate (1) of a base doping type. The high-doping and contacting is effected by producing a plurality of local high-doping regions of the base doping type in the semiconductor substrate (1) on a contacting side (1a) of the semiconductor substrate and applying a metal contacting layer (7) to the contacting side (1a) or, if applicable, one or more intermediate layers wholly or partially covering the contacting side (1a), to form electrically conductive connections between the metal contacting layer (7) and the semiconductor substrate (1) at the high doping regions. It is important that the method comprises the following steps: A) producing a layer structure covering the contacting side (1 a) of the semiconductor substrate, comprising a doping layer (3), which contains a dopant of the base doping type and is in the form of a layer of amorphous silicon or a layer of amorphous silicon carbide having a carbon content less than 10 at. % and a reflective layer (4), which at least in the wavelength range between 800 nm and 1200 nm is constructed with a refractive index nR smaller than the refractive index nHs of the semiconductor substrate, wherein the doping layer (3) lying in the layer sequence closer to the contacting side (1 a) is constructed as the reflective layer (4); B) local heating of layer structure and the surface lying thereunder of the semiconductor substrate at a plurality of zones to form local high-doping regions, wherein the local heating is effected such that at each of the locally heated regions a melt mixture of at least the doping layer (3) and a portion of the semiconductor substrate is formed locally on the contacting side (1 a), and on solidification of the melt mixture a high doping region (6) more strongly doped by at least the dopant of the doping layer (3) is formed in the semiconductor substrate (1) on the contacting side (1 a), and applying a metal contacting layer (7) to form an electrically conductive connection between semiconductor substrate (1) and contacting layer (7) at the high-doping regions.

    METHOD FOR LCOAL HIGH-DOPING AND CONTACTING OF A SEMICONDUCTOR STRUCTURE WHICH COMPRISES A SOLAR CELL OR A PRECURSOR OF A SOLAR CELL
    7.
    发明申请
    METHOD FOR LCOAL HIGH-DOPING AND CONTACTING OF A SEMICONDUCTOR STRUCTURE WHICH COMPRISES A SOLAR CELL OR A PRECURSOR OF A SOLAR CELL 有权

    公开(公告)号：US20120301995A1

    公开(公告)日：2012-11-29

    申请号：US13575446

    申请日：2011-01-18

    申请人： Dominik Suwito ,  Jan Benick ,  Ulrich Jager

    发明人： Dominik Suwito ,  Jan Benick ,  Ulrich Jager

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/1804 ,  H01L21/268 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/061 ,  Y02E10/547 ,  Y02P70/521

    摘要： The invention relates to a method for local high-doping and contacting of a semiconductor structure which is a solar cell or a precursor of a solar cell and has a silicon semiconductor substrate (1) of a base doping type. The high-doping and contacting is effected by producing a plurality of local high-doping regions of the base doping type in the semiconductor substrate (1) on a contacting side (1a) of the semiconductor substrate and applying a metal contacting layer (7) to the contacting side (1a) or, if applicable, one or more intermediate layers wholly or partially covering the contacting side (1a), to form electrically conductive connections between the metal contacting layer (7) and the semiconductor substrate (1) at the high doping regions. It is important that the method comprises the following steps: A) producing a layer structure covering the contacting side (1 a) of the semiconductor substrate, comprising a doping layer (3), which contains a dopant of the base doping type and is in the form of a layer of amorphous silicon or a layer of amorphous silicon carbide having a carbon content less than 10 at. % and a reflective layer (4), which at least in the wavelength range between 800 nm and 1200 nm is constructed with a refractive index nR smaller than the refractive index nHs of the semiconductor substrate, wherein the doping layer (3) lying in the layer sequence closer to the contacting side (1 a) is constructed as the reflective layer (4); B) local heating of layer structure and the surface lying thereunder of the semiconductor substrate at a plurality of zones to form local high-doping regions, wherein the local heating is effected such that at each of the locally heated regions a melt mixture of at least the doping layer (3) and a portion of the semiconductor substrate is formed locally on the contacting side (1 a), and on solidification of the melt mixture a high doping region (6) more strongly doped by at least the dopant of the doping layer (3) is formed in the semiconductor substrate (1) on the contacting side (1 a), and applying a metal contacting layer (7) to form an electrically conductive connection between semiconductor substrate (1) and contacting layer (7) at the high-doping regions.