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公开(公告)号：US20150140900A1
公开(公告)日：2015-05-21
申请号：US14405116
申请日：2012-06-07
Applicant: Seh Kwang Lee , Youn Chul Kim , Joo Han Lee , Jae Kwang Choi , Jae Phil Boo
Inventor： Seh Kwang Lee , Youn Chul Kim , Joo Han Lee , Jae Kwang Choi , Jae Phil Boo
IPC: B24B49/18 , B24B53/017 , B24B37/005
CPC classification number: B24B49/186 , B24B37/005 , B24B49/18 , B24B53/017
Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.
Abstract translation: 提供了一种化学机械抛光（CMP）装置，其包括摆动单元，该摆动单元以预定间隔安装在其上放置待调理的CMP垫的压板上，安装在摆动单元的上端的连接器 在摆动单元的垂直方向上的端部，并且围绕摆放单元围绕CMP垫旋转，可旋转地安装在连接器的另一端上的旋转器，耦合到旋转体并在旋转时调节CMP垫的CMP垫调节器，以及 安装在连接器上并检测振动以测量CMP垫调节器的振动加速度的振动计，从而基于振动加速度和CMP垫调节器的安装或使用状态来预测CMP垫的磨损率。
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公开(公告)号：US20130344779A1
公开(公告)日：2013-12-26
申请号：US14003493
申请日：2012-03-07
Applicant: Seh Kwang Lee , Youn Chul Kim , Joo Han Lee , Jong Jae Lee
Inventor： Seh Kwang Lee , Youn Chul Kim , Joo Han Lee , Jong Jae Lee
IPC: B24B53/017 , B24D18/00
CPC classification number: B24B53/017 , B24D18/00
Abstract: The present invention relates to a conditioner for a chemical-mechanical planarization (CMP) pad, which is used in a CMP process that is part of a semiconductor element manufacturing process, and more particularly, to a conditioner for a soft pad, and a method of manufacturing the same, wherein the conditioner can be used under CMP conditions using a slurry having a small amount of polishing particles, and/or a porous pad having comparatively low hardness and very high porosity.
Abstract translation: 本发明涉及一种用于化学机械平面化（CMP）焊盘的调节器，其用于作为半导体元件制造工艺的一部分的CMP工艺中，更具体地，涉及一种用于软焊盘的调节器，以及一种方法 的制造方法，其中可以使用具有少量抛光颗粒的浆料在CMP条件下使用调理剂，和/或具有相对低的硬度和非常高的孔隙率的多孔垫。
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公开(公告)号：US20140154960A1
公开(公告)日：2014-06-05
申请号：US14233489
申请日：2012-07-16
Applicant: Seh Kwang Lee , Joo Han Lee
Inventor： Seh Kwang Lee , Joo Han Lee
IPC: B24B53/017
CPC classification number: B24B53/017 , B24B53/12
Abstract: The present invention relates to a CMP pad conditioner having a substrate and a cutting tip pattern formed on at least one surface of the substrate, and more particularly to a CMP pad conditioner having cutting tip patterns, in which the cutting tip patterns have an improved structure that can increase the productivity of the CMP pad conditioner and that can sufficiently ensure the strength and safety of the cutting tip patterns.
Abstract translation: 本发明涉及一种CMP衬垫调节器，其具有形成在衬底的至少一个表面上的衬底和切割尖端图案，更具体地涉及具有切割尖端图案的CMP垫调节器，其中切割尖端图案具有改进的结构 这可以提高CMP垫调节器的生产率，并且可以充分确保切割尖端图案的强度和安全性。
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Patent Agency Ranking
公开(公告)号：US06280579B1
公开(公告)日：2001-08-28
申请号：US09123507
申请日：1998-07-28
Applicant: Seh Kwang Lee , John Egermeier
Inventor： Seh Kwang Lee , John Egermeier
IPC: C23C1434
CPC classification number: H01J37/3414 , C23C14/3407 , C23C14/564 , H01J37/3405
Abstract: A method and apparatus for detecting target misalignment and plasma instability in a sputtering chamber in a semiconductor fabrication system is provided. In certain embodiments, a detector is utilized to monitor the voltage of the power applied to bias the target. If the voltage fluctuates excessively, plasma instability and target misalignment is indicated.
Abstract translation: 提供了一种用于检测半导体制造系统中的溅射室中的目标不对准和等离子体不稳定性的方法和装置。 在某些实施例中，使用检测器来监测施加以偏置目标的功率的电压。 如果电压波动过大，则表示等离子体不稳定和目标未对准。
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公开(公告)号：US09421668B2
公开(公告)日：2016-08-23
申请号：US14405116
申请日：2012-06-07
Applicant: Seh Kwang Lee , Youn Chul Kim , Joo Han Lee , Jae Kwang Choi , Jae Phil Boo
Inventor： Seh Kwang Lee , Youn Chul Kim , Joo Han Lee , Jae Kwang Choi , Jae Phil Boo
IPC: B24B37/00 , B24B49/18 , B24B37/005 , B24B53/017
CPC classification number: B24B49/186 , B24B37/005 , B24B49/18 , B24B53/017
Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.
Abstract translation: 提供了一种化学机械抛光（CMP）装置，其包括摆动单元，该摆动单元以预定间隔安装在其上放置待调理的CMP垫的压板上，安装在摆动单元的上端的连接器 在摆动单元的垂直方向上的端部，并且围绕摆放单元围绕CMP垫旋转，可旋转地安装在连接器的另一端上的旋转器，耦合到旋转体并在旋转时调节CMP垫的CMP垫调节器，以及 安装在连接器上并检测振动以测量CMP垫调节器的振动加速度的振动计，从而基于振动加速度和CMP垫调节器的安装或使用状态来预测CMP垫的磨损率。
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公开(公告)号：US09314901B2
公开(公告)日：2016-04-19
申请号：US14117936
申请日：2012-05-15
Applicant: Seh Kwang Lee , Youn Chul Kim , Joo Han Lee , Jae Kwang Choi , Jae Phil Boo
Inventor： Seh Kwang Lee , Youn Chul Kim , Joo Han Lee , Jae Kwang Choi , Jae Phil Boo
IPC: B24B53/017 , B24B53/02 , B24D18/00
CPC classification number: B24B53/017 , B24D18/00
Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.
Abstract translation: 本发明涉及一种用于CMP（化学机械抛光）焊盘的调节器，其用于作为半导体器件的制造的一部分的CMP工艺中，更具体地，涉及一种CMP焊盘调节器，其中切割结构 即使使用不同种类的浆料和调节剂的压力变化时，抛光垫的磨损变化也不是很大，而且制造方法也是如此。
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公开(公告)号：US10166653B2
公开(公告)日：2019-01-01
申请号：US14233489
申请日：2012-07-16
Applicant: Seh Kwang Lee , Joo Han Lee
Inventor： Seh Kwang Lee , Joo Han Lee
IPC: B24B53/017 , B24B53/12
Abstract: The present invention relates to a CMP pad conditioner having a substrate and a cutting tip pattern formed on at least one surface of the substrate, and more particularly to a CMP pad conditioner having cutting tip patterns, in which the cutting tip patterns have an improved structure that can increase the productivity of the CMP pad conditioner and that can sufficiently ensure the strength and safety of the cutting tip patterns.
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公开(公告)号：US08187553B2
公开(公告)日：2012-05-29
申请号：US12766349
申请日：2010-04-23
Applicant: Seh Kwang Lee
Inventor： Seh Kwang Lee
CPC classification number: B01J8/02 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00824 , B01J2219/00826 , B01J2219/00831 , B01J2219/00833 , B01J2219/00835 , B01J2219/0086 , B01J2219/00905 , B01J2219/00909 , B01L3/502753 , B01L3/502776 , B01L2300/0864 , B01L2300/088 , B01L2400/0409
Abstract: A microreactor may include a reaction channel having at least one curved microchannel, the at least one curved microchannel having an outer and inner curved surfaces and being configured to generate a centrifugal force, an inlet configured to supply at least one reactant into the reaction channel, and an outlet bifurcated into a first sub-outlet in communication with the inner curved surface of the at least one curved microchannel and a second sub-outlet in communication with the outer curved surface of the at least one curved microchannel.
Abstract translation: 微反应器可以包括具有至少一个弯曲微通道的反应通道，所述至少一个弯曲微通道具有外弯曲表面和内弯曲表面，并被配置成产生离心力，入口构造成将至少一种反应物供应到反应通道中， 以及分岔成与所述至少一个弯曲微通道的内弯曲表面连通的第一子出口的出口和与所述至少一个弯曲微通道的外弯曲表面连通的第二子出口。
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