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    Aluminum alloy electrode for semiconductor devices
    1.
    再颁专利
    Aluminum alloy electrode for semiconductor devices 有权
    半导体器件铝合金电极

    公开(公告)号：USRE43590E1

    公开(公告)日：2012-08-21

    申请号：US11430302

    申请日：2006-05-09

    申请人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

    发明人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

    IPC分类号： H01L23/54

    CPC分类号： H01L21/2855 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/12736 ,  H01L2924/00

    摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.REEXAMINATION RESULTSThe questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.

    摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150℃至400℃的退火温度下退火Al合金膜，使溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μΩ·cm·cm的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。 重审结果2005年11月28日和2005年11月28日提交的第90 / 007,822号和第90 / 007,883号复核程序中提出的问题已经被考虑，其结果反映在构成复审的重新发行专利中 35USC要求的证书 根据37 CFR 1.570（e）规定，单方面复审，和/或35 U.S.C.所要求的复审证书。 按照第37 CFR 1.997（e）条的规定进行跨部门重新审查。

    Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices
    2.
    发明授权
    Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices 失效
    电极及其半导体器件的制造方法以及用于形成用于半导体器件的电极膜的溅射靶

    公开(公告)号：US6033542A

    公开(公告)日：2000-03-07

    申请号：US574693

    申请日：1995-12-19

    申请人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

    发明人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

    IPC分类号： C23C14/34 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532

    CPC分类号： H01L21/2855 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/12736

    摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

    摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物。 由此获得由电阻率小于20微米欧米伽厘米的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。

    Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices
    3.
    再颁专利
    Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices 有权
    电极及其半导体器件的制造方法以及用于形成用于半导体器件的电极膜的溅射靶

    公开(公告)号：USRE44239E1

    公开(公告)日：2013-05-28

    申请号：US11430299

    申请日：2006-05-09

    申请人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

    发明人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

    IPC分类号： C23C14/34

    CPC分类号： H01L21/2855 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/12736 ,  H01L2924/00

    摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.

    摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μOmegacm的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。

    Aluminum alloy electrode for semiconductor devices
    4.
    发明授权
    Aluminum alloy electrode for semiconductor devices 失效
    半导体器件铝合金电极

    公开(公告)号：US5514909A

    公开(公告)日：1996-05-07

    申请号：US281028

    申请日：1994-07-27

    申请人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

    发明人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

    IPC分类号： C23C14/34 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L23/544

    CPC分类号： H01L21/2855 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/12736

    摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150.degree. to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

    摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并将溶解在Al基体中的所有元素的一部分析出为金属间化合物，退火温度为150〜400℃退火Al合金膜。 由此获得由电阻率小于20微米欧米伽厘米的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。

    Method of manufacturing active matrix type liquid crystal display
    5.
    发明授权
    Method of manufacturing active matrix type liquid crystal display 失效
    有源矩阵型液晶显示器的制造方法

    公开(公告)号：US06333267B1

    公开(公告)日：2001-12-25

    申请号：US08400861

    申请日：1995-03-08

    申请人： Takashi Onishi ,  Eiji Iwamura ,  Seigo Yamamoto ,  Katsutoshi Takagi ,  Kazuo Yoshikawa

    发明人： Takashi Onishi ,  Eiji Iwamura ,  Seigo Yamamoto ,  Katsutoshi Takagi ,  Kazuo Yoshikawa

    IPC分类号： H01L21285

    CPC分类号： H01L21/28008 ,  C23C14/165 ,  G02F1/136286 ,  G02F2001/136295

    摘要： An active matrix type liquid crystal display, in which the reliability is enhanced by preventing the short-circuit and insulation breakdown of a gate insulating portion and the delay time of a gate bus line is shortened by reducing the resistivity of an interconnect film. The liquid crystal display of this type is manufactured by the steps of forming an interconnect/electrode film on a substrate by physical deposition; patterning the interconnect/electrode film; and anodic-oxidizing part or all of the interconnect/electrode film. In this method, the interconnect/electrode film is formed of an Al alloy containing at least one kind selected from a group consisting Fe, Co and rare earth elements in an amount of 0.1 to 10 at %; and the thickness of the anodic oxidation film is specified to be in the range of 200 Å or more.

    摘要翻译： 通过降低互连膜的电阻率，缩短了通过防止栅绝缘部分的短路和绝缘击穿以及栅极总线延迟时间来提高可靠性的有源矩阵型液晶显示器。 这种液晶显示器通过以下步骤制造：通过物理沉积在衬底上形成互连/电极膜; 图案化互连/电极膜; 和阳极氧化部分或全部的互连/电极膜。 在该方法中，互连电极膜由含有0.1〜10原子％的Fe，Co和稀土元素中的至少一种的Al合金形成， 阳极氧化膜的厚度规定在200以上的范围内。

    Crash box
    7.
    发明授权
    Crash box 有权
    碰撞箱

    公开(公告)号：US07665586B2

    公开(公告)日：2010-02-23

    申请号：US11340664

    申请日：2006-01-27

    申请人： Kenji Tamura ,  Yoshiaki Nakazawa ,  Michitaka Yoshida ,  Katsutoshi Takagi ,  Mitsutoshi Kano

    发明人： Kenji Tamura ,  Yoshiaki Nakazawa ,  Michitaka Yoshida ,  Katsutoshi Takagi ,  Mitsutoshi Kano

    IPC分类号： F16F7/12

    CPC分类号： F16F7/123 ,  F16F7/12

    摘要： A crash energy absorption member is provided which has excellent crash energy absorbing properties with the ability of repeated buckling in a stable manner, a high average load at the time of collapse, and the maximum load which is within a range which does not break other members.It is a crash energy absorption member which preferably has a transverse cross-sectional shape of an octagon and which is intended for absorbing impact energy by buckling in the lengthwise direction into a shape of bellows when it receives an impact load. With respect to at least one side forming the transverse cross-sectional shape, when the angle formed by the two sides which adjoin the opposing ends of the one side is α, the relationship between the length L1 of the one side and the distance L2 between the two furthest ends of the two sides interposing the one side satisfies the following equation: 0

    摘要翻译： 提供了一种碰撞能量吸收构件，其具有优异的碰撞能量吸收特性，具有以稳定的方式反复屈曲的能力，塌陷时的高平均载荷，以及不破坏其它构件的范围内的最大载荷 。 它是碰撞能量吸收构件，其优选地具有八边形的横截面形状，并且其用于通过在受到冲击载荷时沿长度方向弯曲成波纹形状而吸收冲击能量。 关于形成横截面形状的至少一个侧面，当由与一侧相对的两端相邻的两侧形成的角度为α时，一侧的长度L1与两侧的距离L2之间的关系 插入一侧的两侧的两个最远端满足以下等式：0

    Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target
    10.
    发明授权
    Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target 失效
    用于光学信息记录介质的半反射膜和反射膜，光学信息记录介质和溅射靶

    公开(公告)号：US07507458B2

    公开(公告)日：2009-03-24

    申请号：US11168497

    申请日：2005-06-29

    申请人： Katsutoshi Takagi ,  Yuuki Tauchi ,  Junichi Nakai

    发明人： Katsutoshi Takagi ,  Yuuki Tauchi ,  Junichi Nakai

    IPC分类号： B32B3/02

    CPC分类号： C22C5/06 ,  C23C14/205 ,  C23C14/3414 ,  G11B7/24038 ,  G11B7/258 ,  G11B7/259 ,  G11B7/266 ,  Y10T428/21

    摘要： Each of a semi-reflective film or reflective film for an optical information recording medium, and a Ag based alloy sputtering target includes a Ag based alloy containing 0.01 to 10 atomic percent of Li. The Ag based alloy exhibits high cohesion resistance, high light resistance, high heat resistance, high reflectivity, high transmissivity, low absorptivity, and high thermal conductivity of the level which had not been realized by the pure Ag or by the conventional Ag alloys. The resulting semi-reflective film and reflective film for an optical information recording medium containing the Ag based alloy exhibit excellent writing/reading properties and long term reliability. The sputtering target for an optical information recording medium is used in depositing the semi-reflective film and the reflective film. Using the semi-reflective film and/or the reflective film, an optical information recording medium is manufactured.

    摘要翻译： 用于光学信息记录介质的半反射膜或反射膜以及Ag基合金溅射靶包括含有0.01至10原子％的Li的Ag基合金。 Ag基合金表现出较高的内聚力，高耐光性，高耐热性，高反射率，高透射率，低吸收率和高纯度Ag或常规Ag合金所未能达到的高导热率。 所得的用于含有Ag基合金的光学信息记录介质的半反射膜和反射膜表现出优异的书写/读取性能和长期可靠性。 用于光学信息记录介质的溅射靶用于沉积半反射膜和反射膜。 使用半反射膜和/或反射膜，制造光学信息记录介质。