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12 条记录 (耗时 0.014 秒)

    Polycrystalline silicon reactor
    1.
    发明授权
    Polycrystalline silicon reactor 有权
    多晶硅反应器

    公开(公告)号：US08540818B2

    公开(公告)日：2013-09-24

    申请号：US12662597

    申请日：2010-04-26

    申请人： Seiichi Kirii ,  Teruhisa Kitagawa

    发明人： Seiichi Kirii ,  Teruhisa Kitagawa

    IPC分类号： C23C16/458 ,  C23C16/46 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06

    CPC分类号： C23C16/24 ,  C01B33/035

    摘要： A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.

    摘要翻译： 通过向加热的硅种子棒供应原料气体而沉积多晶硅的多晶硅反应器具有： 硅籽晶杆所在的底板，具有碟形上表面; 设置在上表面的最下部的从上表面向下表面穿过底板的路径的开口; 以及可拆卸地附接到开口的插头。

    Polycrystalline silicon reactor
    2.
    发明申请
    Polycrystalline silicon reactor 有权
    多晶硅反应器

    公开(公告)号：US20100269754A1

    公开(公告)日：2010-10-28

    申请号：US12662597

    申请日：2010-04-26

    申请人： Seiichi Kirii ,  Teruhisa Kitagawa

    发明人： Seiichi Kirii ,  Teruhisa Kitagawa

    IPC分类号： C23C16/00

    CPC分类号： C23C16/24 ,  C01B33/035

    摘要： A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.

    摘要翻译： 通过向加热的硅种子棒供应原料气体而沉积多晶硅的多晶硅反应器具有： 硅籽晶杆所在的底板，具有碟形上表面; 设置在上表面的最下部的从上表面向下表面穿过底板的路径的开口; 以及可拆卸地附接到开口的插头。

    Chlorosilanes purifying apparatus and chlorosilanes manufacturing method
    3.
    发明申请
    Chlorosilanes purifying apparatus and chlorosilanes manufacturing method 有权
    氯硅烷净化装置和氯硅烷制造方法

    公开(公告)号：US20090238748A1

    公开(公告)日：2009-09-24

    申请号：US12382659

    申请日：2009-03-20

    申请人： Teruhisa Kitagawa ,  Mitsutoshi Narukawa ,  Chikara Inaba

    发明人： Teruhisa Kitagawa ,  Mitsutoshi Narukawa ,  Chikara Inaba

    IPC分类号： C01B33/107 ,  B01J19/24

    CPC分类号： B01J8/0285 ,  B01J2208/00123 ,  B01J2219/00268 ,  C01B33/10778

    摘要： Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container 1 is filled with sodium chloride and heated by a heating device 17, a gas containing chlorosilanes produced by a reaction between metallurgical grade silicon and hydrogen chloride passes through the sodium chloride layer 16 to generate a double salt of aluminum chloride contained in the gas and the sodium chloride, and the gas from which the double salt is separated is recovered from a gas recovery tube 26.

    摘要翻译： 在氯化反应器中生产的含氯硅烷的气体中的氯化铝被有效地去除。 容器1填充氯化钠并通过加热装置17加热，含有通过冶金级硅和氯化氢之间的反应产生的氯硅烷的气体通过氯化钠层16以产生气体中所含的二氯化铝盐 和氯化钠，从气体回收管26回收双重盐分离的气体。

    Apparatus for producing single crystal silicon
    5.
    发明授权
    Apparatus for producing single crystal silicon 有权
    单晶硅制造装置

    公开(公告)号：US08313577B2

    公开(公告)日：2012-11-20

    申请号：US12343798

    申请日：2008-12-24

    申请人： Noboru Chikusa ,  Teruhisa Kitagawa ,  Masaki Ito ,  Takanori Ito

    发明人： Noboru Chikusa ,  Teruhisa Kitagawa ,  Masaki Ito ,  Takanori Ito

    IPC分类号： C30B35/00 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/20 ,  C30B13/32 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1064

    摘要： An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.

    摘要翻译： 一种用于制造单晶硅的装置，包括：感应加热线圈，设置在多晶硅棒周围，用于熔合多晶硅棒; 放热环，其具有覆盖所述导电构件的石英涂层构件; 支撑构件，其以可旋转的方式支撑放热环并穿过壳体的壁; 操作装置，其使所述支撑构件旋转并使所述放热环在所述放热环位于所述感应加热线圈附近的加热位置和所述放热环从所述加热位置退出的待机位置之间往复运动; 密封构件，其设置在所述壳体的壁与所述支撑构件之间并且在其间保持所述密封构件; 以及冷却流路，其形成在所述支撑部件中并使冷却介质流动。

    Internal pressure explosion-proof system
    6.
    发明授权
    Internal pressure explosion-proof system 有权
    内压防爆系统

    公开(公告)号：US07456753B2

    公开(公告)日：2008-11-25

    申请号：US11406514

    申请日：2006-04-19

    申请人： Teruhisa Kitagawa ,  Shingi Takahashi

    发明人： Teruhisa Kitagawa ,  Shingi Takahashi

    IPC分类号： G08B21/00

    CPC分类号： H01H35/24 ,  Y10T307/779

    摘要： An internal pressure explosion-proof system is provided that is capable of detecting high-pressure abnormality of an internal pressure explosion-proof mechanism, urging a check of gas/air apparatus by providing a means for notifying a user of abnormality, and decreasing excessive pressure of an internal pressure chamber. A high-pressure abnormality detector and a pressure regulating valve are provided in an air discharging portion for releasing the gas/air discharged from the internal pressure explosion-proof mechanism. The working pressure of the high-pressure abnormality detector is set to be lower than the working pressure of the pressure regulating valve. The high-pressure abnormality detector sends a signal when the pressure becomes higher than the set pressure to make the alarm give a warning and makes the open valves open to decrease the pressure of the internal pressure chamber of the internal pressure explosion-proof mechanism which became excessive.

    摘要翻译： 提供一种内部压力防爆系统，其能够检测内部压力防爆机构的高压异常，通过提供用于通知使用者异常的装置并且减少过大的压力来促使对气体/空气装置的检查 的内部压力室。 在排气部中设置有高压异常检测器和压力调节阀，用于释放从内压防爆机构排出的气体/空气。 高压异常检测器的工作压力被设定为低于压力调节阀的工作压力。 高压异常检测器在压力高于设定压力时发出信号，使报警器发出警告，打开阀门，降低内压防爆机构内压室的压力，成为 过多。

    Rotating electrical machine
    8.
    发明授权
    Rotating electrical machine 有权
    旋转电机

    公开(公告)号：US07948130B2

    公开(公告)日：2011-05-24

    申请号：US12706714

    申请日：2010-02-17

    申请人： Teruhisa Kitagawa

    发明人： Teruhisa Kitagawa

    IPC分类号： H02K3/46 ,  H02K3/50

    CPC分类号： H02K3/522

    摘要： A rotating electrical machine includes a stator of which winding terminals are connected to conductive members using a connection substrate on which the conductive members are disposed and which includes an insulating plate. The connection substrate includes a plurality of circumferential grooves and a plurality of radial grooves. The conductive members are fitted to the circumferential grooves in a concentric manner. The conductive members coated with insulating films are formed in a bent shape such that the conductive members project from the radial grooves to an outside of the connection substrate and are connected to the winding terminals of the stator.

    摘要翻译： 旋转电机包括定子，其中绕组端子使用其上布置有导电构件的连接基板连接到导电构件并且包括绝缘板。 连接基板包括多个周向槽和多个径向槽。 导电构件以同心方式装配到周向槽。 涂覆有绝缘膜的导电构件形成为弯曲形状，使得导电构件从径向凹槽突出到连接基板的外部并且连接到定子的绕组端子。

    APPARATUS FOR PRODUCING SINGLE CRYSTAL SILICON
    9.
    发明申请
    APPARATUS FOR PRODUCING SINGLE CRYSTAL SILICON 有权
    生产单晶硅的装置

    公开(公告)号：US20090158996A1

    公开(公告)日：2009-06-25

    申请号：US12343798

    申请日：2008-12-24

    申请人： Noboru Chikusa ,  Teruhisa Kitagawa ,  Masaki Ito ,  Takanori Ito

    发明人： Noboru Chikusa ,  Teruhisa Kitagawa ,  Masaki Ito ,  Takanori Ito

    IPC分类号： C30B15/14

    CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/20 ,  C30B13/32 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1064

    摘要： An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.

    摘要翻译： 一种用于制造单晶硅的装置，包括：感应加热线圈，设置在多晶硅棒周围，用于熔合多晶硅棒; 放热环，其具有覆盖所述导电构件的石英涂层构件; 支撑构件，其以可旋转的方式支撑放热环并穿过壳体的壁; 操作装置，其使所述支撑构件旋转并使所述放热环在所述放热环位于所述感应加热线圈附近的加热位置和所述放热环从所述加热位置退出的待机位置之间往复运动; 密封构件，其设置在所述壳体的壁与所述支撑构件之间并且在其间保持所述密封构件; 以及冷却流路，其形成在所述支撑部件中并使冷却介质流动。