公开(公告)号：US08213272B2

公开(公告)日：2012-07-03

申请号：US12482851

申请日：2009-06-11

申请人： Seiichi Takayama ,  Satoshi Tomikawa ,  Toshiyuki Ayukawa ,  Daisuke Miyauchi ,  Koji Shimazawa

发明人： Seiichi Takayama ,  Satoshi Tomikawa ,  Toshiyuki Ayukawa ,  Daisuke Miyauchi ,  Koji Shimazawa

IPC分类号： G11B11/00

CPC分类号： G02B6/1228 ,  G02B2006/12078 ,  G11B5/3133 ,  G11B5/6088 ,  G11B2005/0005 ,  G11B2005/0021

摘要： A waveguide is provided, in which the optical coupling efficiency to a light source is sufficiently high, and the light-emitting spot center is stably provided at the intended position. The waveguide comprises a multilayered structure in which refractive indexes of layers having a surface contact with each other are different from each other. The multilayered structure is divided into a plurality of groups, and the length from the light-receiving end surface to the light-emitting end surface of one group is different from that of the neighboring group, and the protruded light-emitting end surface of the first group defined as a group that has the largest length includes a center of the light-emitting spot. In this waveguide, the state in which the light-emitting spot center is positioned within the light-emitting end surface does not easily be changed, even when the light-receiving spot center within the light-receiving end surface is rather displaced.

摘要翻译： 提供了一种波导，其中对光源的光耦合效率足够高，并且发光光点中心稳定地设置在预期位置。 波导包括彼此具有表面接触的层的折射率彼此不同的多层结构。 多层结构被分成多个组，从一个组的受光端面到发光端面的长度不同于相邻组的发光端面的突出的发光端面 被定义为具有最大长度的组的第一组包括发光点的中心。 在该波导中，发光光点中心位于发光端面内的状态也不容易改变，即使光接收端面内的光接收点中心相当偏离。

公开(公告)号：US20100315736A1

公开(公告)日：2010-12-16

申请号：US12482851

申请日：2009-06-11

申请人： Seiichi Takayama ,  Satoshi Tomikawa ,  Toshiyuki Ayukawa ,  Daisuke Miyauchi ,  Koji Shimazawa

发明人： Seiichi Takayama ,  Satoshi Tomikawa ,  Toshiyuki Ayukawa ,  Daisuke Miyauchi ,  Koji Shimazawa

IPC分类号： G11B5/02 ,  G02B6/10

CPC分类号： G02B6/1228 ,  G02B2006/12078 ,  G11B5/3133 ,  G11B5/6088 ,  G11B2005/0005 ,  G11B2005/0021

摘要： A waveguide is provided, in which the optical coupling efficiency to a light source is sufficiently high, and the light-emitting spot center is stably provided at the intended position. The waveguide comprises a multilayered structure in which refractive indexes of layers having a surface contact with each other are different from each other. The multilayered structure is divided into a plurality of groups, and the length from the light-receiving end surface to the light-emitting end surface of one group is different from that of the neighboring group, and the protruded light-emitting end surface of the first group defined as a group that has the largest length includes a center of the light-emitting spot. In this waveguide, the state in which the light-emitting spot center is positioned within the light-emitting end surface does not easily be changed, even when the light-receiving spot center within the light-receiving end surface is rather displaced.

摘要翻译： 提供了一种波导，其中对光源的光耦合效率足够高，并且发光光点中心稳定地设置在预期位置。 波导包括彼此具有表面接触的层的折射率彼此不同的多层结构。 多层结构被分成多个组，从一个组的受光端面到发光端面的长度不同于相邻组的发光端面的突出的发光端面 被定义为具有最大长度的组的第一组包括发光点的中心。 在该波导中，发光光点中心位于发光端面内的状态也不容易改变，即使光接收端面内的光接收点中心相当偏离。

公开(公告)号：US07881021B2

公开(公告)日：2011-02-01

申请号：US12022538

申请日：2008-01-30

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

摘要： A magnetoresistive device with CPP structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer and a magnetization direction control area that extends further rearward from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer to produce magnetizations of the said first and second ferromagnetic layers which are antiparallel with each other; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions.

摘要翻译： 一种具有CPP结构的磁阻器件，包括非磁性中间层，以及第一铁磁层和第二铁磁层，所述第一铁磁层和第二铁磁层层叠并形成有位于它们之间的所述非磁性中间层，其中所述第一和第二铁磁层中的每一个包括连接到 所述非磁性中间层和从所述非磁性中间层的后端的位置向后延伸的磁化方向控制区域; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，以产生与所述第一和第二铁磁层反平行的所述第一和第二铁磁层的磁化 彼此; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。

公开(公告)号：US20090290264A1

公开(公告)日：2009-11-26

申请号：US12126567

申请日：2008-05-23

申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.

公开(公告)号：US08310791B2

公开(公告)日：2012-11-13

申请号：US12382309

申请日：2009-03-13

申请人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.

摘要翻译： 磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。 因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

公开(公告)号：US20100232074A1

公开(公告)日：2010-09-16

申请号：US12382309

申请日：2009-03-13

申请人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takahiko Machita ,  Tomohito Mizuno ,  Koji Shimazawa ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.

摘要翻译： 磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。 因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

公开(公告)号：US20090190270A1

公开(公告)日：2009-07-30

申请号：US12022538

申请日：2008-01-30

申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

公开(公告)号：US08149546B2

公开(公告)日：2012-04-03

申请号：US11925030

申请日：2007-10-26

申请人： Toshiyuki Ayukawa ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Takahiko Machita

发明人： Toshiyuki Ayukawa ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Takahiko Machita

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

摘要： A magnetic field detecting element comprises a stack including upper and lower magnetic layers, and a non-magnetic intermediate layer sandwiched therebetween, wherein magnetization of the magnetic layers changes in accordance with an external magnetic field; upper and lower shield electrode layers sandwiching the stack in a direction of stacking, wherein the upper and lower shield electrode layers supply sense current in the direction of stacking, and magnetically shield the stack; a bias magnetic layer provided on a surface of the stack opposite to an air bearing surface, and wherein the bias magnetic layer applies a bias magnetic field to the upper and lower magnetic layers in a direction perpendicular to the air bearing surface; and insulating layers provided on both sides of the stack in a track width direction thereof, wherein the stack has a stepped portion formed at the non-magnetic intermediate layer.

摘要翻译： 磁场检测元件包括包括上下磁性层的堆叠和夹在其间的非磁性中间层，其中磁性层的磁化根据外部磁场而变化; 上下屏蔽电极层沿层叠方向夹着堆叠，其中上下屏蔽电极层在堆叠方向上提供感测电流，并对堆叠进行磁屏蔽; 偏置磁性层，其设置在与空气轴承表面相对的所述堆叠的表面上，并且其中所述偏置磁性层在垂直于所述空气轴承表面的方向上向所述上部和下部磁性层施加偏置磁场; 以及设置在堆叠的轨道宽度方向两侧的绝缘层，其中堆叠具有形成在非磁性中间层的台阶部分。

公开(公告)号：US08094420B2

公开(公告)日：2012-01-10

申请号：US12126567

申请日：2008-05-23

申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.

摘要翻译： 本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。 磁阻单元包括夹在铁磁层之间的非磁性中间层。 平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。 非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

公开(公告)号：US20090303640A1

公开(公告)日：2009-12-10

申请号：US12109651

申请日：2008-04-25

申请人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Tsuyoshi Ichiki

发明人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Tsuyoshi Ichiki

IPC分类号： G11B5/33

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

摘要： A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio.

摘要翻译： 磁阻效应元件包括介于第一和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 磁阻效应元件被配置为允许感测电流在垂直于第一磁性层，第二磁性层和间隔层的膜平面的方向上流动，使得第一磁性层的磁化方向 并且第二磁性层的磁化方向根据外部磁场而变化。 本发明旨在提供一种确保对感应电流的高电阻的磁阻效应元件，同时限制限流层对磁性层的影响，从而实现高的磁阻比。