Crystalline sialon having wurtzite structure
    3.
    发明授权
    Crystalline sialon having wurtzite structure 失效
    具有纤锌矿结构的结晶塞隆

    公开(公告)号:US5429998A

    公开(公告)日:1995-07-04

    申请号:US134955

    申请日:1993-10-12

    CPC分类号: C04B35/597

    摘要: A crystalline sialon comprising crystals containing aluminum, silicon, nitrogen and oxygen, in which the crystal structure has a hexagonal system wurtzite structure identical with that of AlN crystals, and the volume of the unit cell thereof has a value smaller than that of the AlN crystals. The crystalline sialon can be synthesized by mixing a silicon-containing gas, an aluminum halide, a nitrogen atom-containing gas and an oxygen atom-containing gas, converting the gas mixture into plasmas by microwave discharging and depositing a film on the surface of a substrate, in which the temperature of the substrate, while controlling a flow rate of the silicon-containing gas and a flow rate of the oxygen-containing gas. The crystalline sialon of the present invention has high hardness, is excellent in oxidation resistance, as well as excellent in heat conductivity and adhesion with a superhard substrate.

    摘要翻译: 包含含有铝,硅,氮和氧的晶体的结晶塞隆,其中晶体结构具有与AlN晶体相同的六方晶系纤锌矿结构,并且其晶胞体积小于AlN晶体的体积 。 可以通过混合含硅气体,卤化铝,含氮原子的气体和含氧原子的气体来合成结晶硅铝氧氮,通过微波放电将气体混合物转化成等离子体,并将膜沉积在 衬底,其中衬底的温度同时控制含硅气体的流量和含氧气体的流量。 本发明的结晶塞隆具有高硬度,耐氧化性优异,导热性优异且与超硬底材的粘合性优异。

    Forming die manufacturing method
    4.
    发明授权
    Forming die manufacturing method 失效
    成型模具制造方法

    公开(公告)号:US5164221A

    公开(公告)日:1992-11-17

    申请号:US638240

    申请日:1991-01-04

    摘要: A manufacturing method of a forming die includes the steps of depositing a film of aluminum nitride or aluminum oxynitride on the forming surface of a forming member by passing an electric discharge through a mixture gas of halide of aluminum and a gas containing nitrogen atoms and hydrogen atoms or a mixture gas of halide of aluminum, a gas containing nitrogen atoms and a gas containing oxygen atoms by the application of a microwave and thereby ionizing the mixture gas, and fixing such a forming member on a die.

    摘要翻译: 成形模具的制造方法包括以下步骤:通过使铝的卤化物和含有氮原子和氢原子的气体的混合气体通过放电,在成形构件的成形表面上沉积氮化铝或氮氧化铝膜 或铝的卤化物的混合气体,含有氮原子的气体和含有氧原子的气体通过微波进行离子化,从而使混合气体电离,并将这样的成型体固定在模具上。

    Synthesis method by plasma chemical vapor deposition
    5.
    发明授权
    Synthesis method by plasma chemical vapor deposition 失效
    通过等离子体化学气相沉积的合成方法

    公开(公告)号:US5093150A

    公开(公告)日:1992-03-03

    申请号:US493561

    申请日:1990-03-14

    CPC分类号: C23C16/511 C23C16/303

    摘要: A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of excellent quality can be synthesized under stable conditions in an industrial mass production process.

    摘要翻译: 通过等离子体化学气相沉积合成含金属材料的方法包括将反应气体含有金属原子转化成反应室中的等离子体,并从反应室内的等离子体区域外部供应惰性气体。 在工业批量生产过程中,在稳定条件下可以合成出优质陶瓷膜。