摘要:
A carbon material having oxidation resistance is prepared by forming a fi coating constituted mainly by carbon on the surface of a carbon/carbon composite by chemical vapor deposition, then forming on said first coating a second coating of a ceramic or both a ceramic and carbon by chemical vapor deposition, and changing at least one of thermal physical properties or mechanical physical properties of carbon in said first coating continuously or step-wise.
摘要:
A carbon/carbon composite having oxidation resistance is produced by filling the voids of a carbon/carbon composite comprising 10-70% by volume of carbon fibers and 5-90% by volume of a carbonaceous matrix and having a void percentage of 10-55%, with at least one of carbon and a ceramic by chemical vapor infiltration and then coating the deposit surface with a ceramic or both ceramic and carbon by chemical vapor deposition.
摘要:
A crystalline sialon comprising crystals containing aluminum, silicon, nitrogen and oxygen, in which the crystal structure has a hexagonal system wurtzite structure identical with that of AlN crystals, and the volume of the unit cell thereof has a value smaller than that of the AlN crystals. The crystalline sialon can be synthesized by mixing a silicon-containing gas, an aluminum halide, a nitrogen atom-containing gas and an oxygen atom-containing gas, converting the gas mixture into plasmas by microwave discharging and depositing a film on the surface of a substrate, in which the temperature of the substrate, while controlling a flow rate of the silicon-containing gas and a flow rate of the oxygen-containing gas. The crystalline sialon of the present invention has high hardness, is excellent in oxidation resistance, as well as excellent in heat conductivity and adhesion with a superhard substrate.
摘要:
A manufacturing method of a forming die includes the steps of depositing a film of aluminum nitride or aluminum oxynitride on the forming surface of a forming member by passing an electric discharge through a mixture gas of halide of aluminum and a gas containing nitrogen atoms and hydrogen atoms or a mixture gas of halide of aluminum, a gas containing nitrogen atoms and a gas containing oxygen atoms by the application of a microwave and thereby ionizing the mixture gas, and fixing such a forming member on a die.
摘要:
A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of excellent quality can be synthesized under stable conditions in an industrial mass production process.
摘要:
An image forming system includes one or more image forming apparatuses and an information processing apparatus connected to the one or more image forming apparatuses through a network. The information processing apparatus includes circuitry that registers an image forming job that is received from one of the image forming apparatuses in association with information on a user who has authority to execute the image forming job, acquires information on a location of the user, determines whether or not the user is located at a first area based on the information on the location of the first user to generate a first determination result, and determines an operation to be performed on the image forming job based on the first determination result.
摘要:
A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.
摘要:
A charging processing system includes: a receiving unit configured to receive a request to execute a first function which a first device has, from a second device that does not have the first function; a function executing unit configured to execute the first function; and a charging processing unit configured to perform charging processing such that an amount of charge for execution of the first function is larger as there is a larger difference between a performance with regard to the first function and a performance of the second device or a performance with regard to a second function which has a lower performance than the first function and which the second device does not have.
摘要:
An operation unit in a child device causes a main unit in the child device to execute a stand-alone job, and causes the main unit and a server device to execute a cooperating job. The main unit executes the stand-alone job every time it is requested, and generates and manages a stand-alone job log including stand-alone job log identification information. The server device controls the execution of stand-alone jobs included in the cooperating job based on a request for executing the cooperating job, and manages cooperating job identification information associated with the stand-alone job log identification information of the stand-alone jobs included in the cooperating job. The server device acquires the stand-alone job logs from the main unit and extracts the stand-alone job logs including the stand-alone job log identification information associated with the cooperating job identification information, to generate a cooperating job log corresponding to the cooperating job.
摘要:
Provided is a wire rod for an I-type oil ring, which includes right and left rail portions and a web portion connecting the rail portions, which has an oil hole or a molten through hole formed in the web portion, and which has a circumscribing circle diameter of 10 mm or less in its transverse contour. The molten through hole has such a remolten portion formed on its exit side as encloses the exit of the molten through hole. The remolten portion exceeds such a molten portion in the transverse section along the center of the molten through hole as is formed in the molten through hole, and is formed to have 200 μm or less from the outer circumference of the molten through hole and 100 μm or less in the depth direction of the molten through hole.