公开(公告)号：US20120070066A1

公开(公告)日：2012-03-22

申请号：US13375085

申请日：2010-06-03

申请人： Hiroyuki Kitsunai ,  Seiichiro Kanno ,  Masaru Matsushima ,  Shuichi Nakagawa ,  Go Miya

发明人： Hiroyuki Kitsunai ,  Seiichiro Kanno ,  Masaru Matsushima ,  Shuichi Nakagawa ,  Go Miya

IPC分类号： G06K9/00

CPC分类号： H01L21/6831 ,  H01J37/145 ,  H01J37/28 ,  H01J2237/2817 ,  H01L22/12

摘要： The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude.

摘要翻译： 带电粒子束装置具有在试样的外边缘附近等待电位分布的对称性被扰乱的问题，被评估的物体导致带电粒子束在那里偏转。 安装在静电吸引型的检体保持机构内的电极板由同心配置的内外电极板形成。 外电极板的外径大于样品的外径。 确定电极板的尺寸，使得外部电极板和试样的重叠面积基本上等于内部电极板的面积。 内部电极板相对于参考电压和任意大小施加正极性的电压，并且外部电极施加负极性和任意大小的电压。

公开(公告)号：US08680466B2

公开(公告)日：2014-03-25

申请号：US13202556

申请日：2009-10-15

申请人： Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto ,  Kazuyuki Ikenaga

发明人： Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto ,  Kazuyuki Ikenaga

IPC分类号： H01J37/28

CPC分类号： H01J37/20 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2007

摘要： It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.In order to accomplish the above-described object, the following electron microscope is proposed: The electron microscope including a negative-voltage applying power-supply for applying the negative voltage to the sample, and thereby forming a decelerating electric field to be exerted onto the electron beam, an electrostatic-chuck mechanism for providing a potential difference among a plurality of its internal electrodes, and thereby generating an adsorption force to be exerted onto the sample, and a contact terminal which is so configured as to come into contact with the sample when the sample is deployed on a sample-supporting stage, the electrostatic-chuck mechanism causes the potential difference to occur among the internal electrodes in the state where the contact terminal comes into contact with the sample, the negative-voltage applying power-supply being operated to apply the negative voltage to the contact terminal after the potential difference has been caused to occur.

摘要翻译： 本发明的目的在于提供一种电子显微镜，用于对被导入的样品适当地施加延迟电压。 为了实现上述目的，提出了以下电子显微镜：电子显微镜，其包括负电压施加电源，用于向样品施加负电压，从而形成施加到该样品上的减速电场 电子束，用于在多个内部电极之间提供电位差的静电吸盘机构，从而产生施加到样品上的吸附力;以及接触端子，其被配置为与样品接触 当样品被部署在样品支撑台上时，静电吸盘机构在接触端子与样品接触的状态下在内部电极之间产生电位差，负压施加电源为 在发生电位差之后，将负电压施加到接触端子。

公开(公告)号：US20120256087A1

公开(公告)日：2012-10-11

申请号：US13518236

申请日：2010-12-24

申请人： Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima

发明人： Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima

IPC分类号： H01J37/20

CPC分类号： H01L21/6831 ,  H01J37/20 ,  H01J2237/2007 ,  H01J2237/28

摘要： There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.

摘要翻译： 提供了能够吸引样品而不使施加到静电卡盘的电压不必要地大的技术。 对于静电卡盘的吸引实验，使用已知翘曲度和翘曲方式的试样，以及吸附状态从不良变为良好的临界施加电压来进行。 在测定检查对象样品时，测定检查对象样品的平坦度，检测检查对象样品的翘曲程度和翘曲图案。 基于检测对象样品的翘曲和翘曲的程度以及已知的关键施加电压，设定静电卡盘的施加电压。

公开(公告)号：US08232522B2

公开(公告)日：2012-07-31

申请号：US13000461

申请日：2009-06-23

申请人： Go Miya ,  Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto

发明人： Go Miya ,  Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto

IPC分类号： H01J37/20

CPC分类号： H01L22/10 ,  H01J37/20 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

摘要翻译： 在通过半导体检查装置检查具有不同尺寸的样品的情况下，一次电子束弯曲，因为在检查样品附近时样品附近的等电位面上的分布受到干扰，所谓的 产生位置偏移。 将电位校正电极设置在样品外部和低于样品下表面的位置处，并且施加比样品低的电位。 此外，对应于检查位置和样品外端之间的距离，样品厚度和一次电子束的照射条件来控制施加到电位校正电极的电压。

公开(公告)号：US20110303844A1

公开(公告)日：2011-12-15

申请号：US13202556

申请日：2009-10-15

申请人： Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto ,  Kazuyuki Ikenaga

发明人： Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto ,  Kazuyuki Ikenaga

IPC分类号： H01J37/20 ,  H01J37/28

CPC分类号： H01J37/20 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2007

摘要： It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.In order to accomplish the above-described object, the following electron microscope is proposed: The electron microscope including a negative-voltage applying power-supply for applying the negative voltage to the sample, and thereby forming a decelerating electric field to be exerted onto the electron beam, an electrostatic-chuck mechanism for providing a potential difference among a plurality of its internal electrodes, and thereby generating an adsorption force to be exerted onto the sample, and a contact terminal which is so configured as to come into contact with the sample when the sample is deployed on a sample-supporting stage, the electrostatic-chuck mechanism causes the potential difference to occur among the internal electrodes in the state where the contact terminal comes into contact with the sample, the negative-voltage applying power-supply being operated to apply the negative voltage to the contact terminal after the potential difference has been caused to occur.

摘要翻译： 本发明的目的在于提供一种电子显微镜，用于对被导入的样品适当地施加延迟电压。 为了实现上述目的，提出了以下电子显微镜：电子显微镜，其包括负电压施加电源，用于向样品施加负电压，从而形成施加在该样品上的减速电场 电子束，用于在多个内部电极之间提供电位差的静电吸盘机构，从而产生施加到样品上的吸附力;以及接触端子，其被配置为与样品接触 当样品被部署在样品支撑台上时，静电吸盘机构在接触端子与样品接触的状态下在内部电极之间产生电位差，负压施加电源为 在发生电位差之后，将负电压施加到接触端子。

公开(公告)号：US08653459B2

公开(公告)日：2014-02-18

申请号：US13518236

申请日：2010-12-24

申请人： Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima

发明人： Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima

IPC分类号： H01J37/20

CPC分类号： H01L21/6831 ,  H01J37/20 ,  H01J2237/2007 ,  H01J2237/28

摘要： There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.

摘要翻译： 提供了能够吸引样品而不使施加到静电卡盘的电压不必要地大的技术。 对于静电卡盘的吸引实验，使用已知翘曲度和翘曲状态的测试样品，以及吸引状态从“不良”变为“良好”的临界施加电压进行。 在测定检查对象样品时，测定检查对象样品的平坦度，检测检查对象样品的翘曲程度和翘曲图案。 基于检测对象样品的翘曲和翘曲的程度以及已知的关键施加电压，设定静电卡盘的施加电压。

公开(公告)号：US08653455B2

公开(公告)日：2014-02-18

申请号：US13375085

申请日：2010-06-03

申请人： Hiroyuki Kitsunai ,  Seiichiro Kanno ,  Masaru Matsushima ,  Shuichi Nakagawa ,  Go Miya

发明人： Hiroyuki Kitsunai ,  Seiichiro Kanno ,  Masaru Matsushima ,  Shuichi Nakagawa ,  Go Miya

IPC分类号： G01N23/00

CPC分类号： H01L21/6831 ,  H01J37/145 ,  H01J37/28 ,  H01J2237/2817 ,  H01L22/12

摘要： The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude.

摘要翻译： 带电粒子束装置具有在试样的外边缘附近等待电位分布的对称性被扰乱的问题，被评估的物体导致带电粒子束在那里偏转。 安装在静电吸引型的检体保持机构内的电极板由同心配置的内外电极板形成。 外电极板的外径大于样品的外径。 确定电极板的尺寸，使得外部电极板和试样的重叠面积基本上等于内部电极板的面积。 内部电极板相对于参考电压和任意大小施加正极性的电压，并且外部电极施加负极性和任意大小的电压。

公开(公告)号：US20110095185A1

公开(公告)日：2011-04-28

申请号：US13000461

申请日：2009-06-23

申请人： Go Miya ,  Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto

发明人： Go Miya ,  Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto

IPC分类号： G21K7/00 ,  H01J37/20

CPC分类号： H01L22/10 ,  H01J37/20 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

摘要翻译： 在通过半导体检查装置检查具有不同尺寸的样品的情况下，一次电子束弯曲，因为在检查样品附近时样品附近的等电位面上的分布受到干扰，所谓的 产生位置偏移。 将电位校正电极设置在样品外部和低于样品下表面的位置处，并且施加比样品低的电位。 此外，对应于检查位置和样品外端之间的距离，样品厚度和一次电子束的照射条件来控制施加到电位校正电极的电压。

公开(公告)号：US08519332B2

公开(公告)日：2013-08-27

申请号：US13537463

申请日：2012-06-29

申请人： Go Miya ,  Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto

发明人： Go Miya ,  Seiichiro Kanno ,  Hiroyuki Kitsunai ,  Masaru Matsushima ,  Toru Shuto

IPC分类号： H01J37/20

CPC分类号： H01L22/10 ,  H01J37/20 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

摘要翻译： 在通过半导体检查装置检查具有不同尺寸的样品的情况下，一次电子束弯曲，因为在检查样品附近时样品附近的等电位面上的分布受到干扰，所谓的 产生位置偏移。 将电位校正电极设置在样品外部和低于样品下表面的位置处，并且施加比样品低的电位。 此外，对应于检查位置和样品外端之间的距离，样品厚度和一次电子束的照射条件来控制施加到电位校正电极的电压。

公开(公告)号：US08835883B2

公开(公告)日：2014-09-16

申请号：US13703926

申请日：2011-06-03

申请人： Daisuke Muto ,  Masanori Watanabe ,  Hiroshi Tsuji ,  Masaru Matsushima

发明人： Daisuke Muto ,  Masanori Watanabe ,  Hiroshi Tsuji ,  Masaru Matsushima

IPC分类号： G10K11/16 ,  G21K5/00 ,  H01J37/28

CPC分类号： G10K11/16 ,  G21K5/00 ,  H01J37/28 ,  H01J2237/0216

摘要： A charged particle radiation device includes a sample chamber in which a sample stage adapted to mount a sample is installed, a charged particle radiation irradiation section adapted to irradiate the sample with a charged particle radiation to observe and fabricate the sample, sidewalls installed on a periphery of the sample chamber and the charged particle radiation irradiation section, a ceiling board installed on a plane located in an upper part of the sidewalls, and a sound absorbing structure section disposed below the ceiling board, and including a plurality of hole sections and a hollow section communicated with the hole sections. The sound absorbing structure section has an absorption band including a frequency band of a standing wave generated in a space surrounded by the sidewalls and the ceiling board. Further, a soundproof cover may include the sidewalls, ceiling board and sound absorbing structure.

摘要翻译： 带电粒子辐射装置包括：样品室，其中安装有用于安装样品的样品台;带电粒子辐射照射部分，适于用带电粒子辐射照射样品以观察和制造样品，安装在外围的侧壁 所述样品室和所述带电粒子辐射照射部分，安装在位于所述侧壁的上部的平面上的顶板和设置在所述顶板下方的吸声结构部分，并且包括多个孔部分和中空部 部分与孔部分连通。 吸声结构部分具有吸收带，该吸收带包括在由侧壁和天花板板围住的空间中产生的驻波的频带。 此外，隔音罩可以包括侧壁，天花板和吸音结构。