公开(公告)号：US20150243557A1

公开(公告)日：2015-08-27

申请号：US14472492

申请日：2014-08-29

Applicant: Semiconductor Components Industries, LLC

Inventor： Michael Thomason ,  Mohammed Tanvir Quddus ,  James Morgan ,  Mihir Mudholkar ,  Scott Donaldson

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/324

CPC classification number: H01L21/28537 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/324 ,  H01L21/76883 ,  H01L21/76889 ,  H01L29/401 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66143 ,  H01L29/8725

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The layer may include a first metal and a second metal. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act. Thereafter, the stripped first structure may be subjected to a second annealing act.

Abstract translation: 许多变型可以包括一种方法，其可以包括相对于形成在第一半导体外延层中的至少一个沟槽结构，在覆盖位置的第一半导体外延层（外延层）上沉积第一层。 该层可以包括第一金属和第二金属。 可以对第一半导体外延层进行至少第一退火动作以提供第一结构。 可以剥离第一结构的至少一部分以去除在第一退火过程中不与硅反应形成硅化物的任何第一层。 此后，剥离的第一结构可以进行第二退火作用。

公开(公告)号：US10211060B2

公开(公告)日：2019-02-19

申请号：US15358361

申请日：2016-11-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael Thomason ,  Mohammed Tanvir Quddus ,  James Morgan ,  Mihir Mudholkar ,  Scott Donaldson ,  Gordon M. Grivna

IPC: H01L21/02 ,  H01L29/872 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768 ,  H01L29/40 ,  H01L29/47 ,  H01L29/66 ,  H01L21/3213

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.

公开(公告)号：US20150243501A1

公开(公告)日：2015-08-27

申请号：US14472545

申请日：2014-08-29

Applicant: Semiconductor Components Industries, LLC

Inventor： Michael Thomason ,  Mohammed Tanvir Quddus ,  James Morgan ,  Mihir Mudholkar ,  Scott Donaldson ,  Gordon M Grivna

IPC: H01L21/02 ,  H01L29/872

CPC classification number: H01L21/28537 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/324 ,  H01L21/76883 ,  H01L21/76889 ,  H01L29/401 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66143 ,  H01L29/8725

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing may be deposited over the first layer. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.

Abstract translation: 许多变型可以包括一种方法，其可以包括相对于形成在第一半导体外延层中的至少一个沟槽结构，在覆盖位置的第一半导体外延层（外延层）上沉积第一层。 第一层可以包括第一金属和第二金属。 第二层可以包括构造和布置为清除在退火期间从第一半导体外延层迁移的硅的材料可以沉积在第一层上。 可以对第一半导体外延层进行至少第一退火动作以提供第一结构。 可以剥离第一结构的至少一部分以去除在第一退火过程中不与硅反应形成硅化物的任何第一层。

公开(公告)号：US09552993B2

公开(公告)日：2017-01-24

申请号：US14472545

申请日：2014-08-29

Applicant: Semiconductor Components Industries, LLC

Inventor： Michael Thomason ,  Mohammed Tanvir Quddus ,  James Morgan ,  Mihir Mudholkar ,  Scott Donaldson ,  Gordon M Grivna

IPC: H01L21/02 ,  H01L29/872 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768 ,  H01L29/40 ,  H01L29/47 ,  H01L21/3213

CPC classification number: H01L21/28537 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/324 ,  H01L21/76883 ,  H01L21/76889 ,  H01L29/401 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66143 ,  H01L29/8725

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing may be deposited over the first layer. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.

Abstract translation: 许多变型可以包括一种方法，其可以包括相对于形成在第一半导体外延层中的至少一个沟槽结构，在覆盖位置的第一半导体外延层（外延层）上沉积第一层。 第一层可以包括第一金属和第二金属。 第二层可以包括构造和布置为清除在退火期间从第一半导体外延层迁移的硅的材料可以沉积在第一层上。 可以对第一半导体外延层进行至少第一退火动作以提供第一结构。 可以剥离第一结构的至少一部分以去除在第一退火过程中不与硅反应形成硅化物的任何第一层。

公开(公告)号：US09478426B2

公开(公告)日：2016-10-25

申请号：US14472492

申请日：2014-08-29

Applicant: Semiconductor Components Industries, LLC

Inventor： Michael Thomason ,  Mohammed Tanvir Quddus ,  James Morgan ,  Mihir Mudholkar ,  Scott Donaldson

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/324 ,  H01L29/40 ,  H01L29/47 ,  H01L29/872

CPC classification number: H01L21/28537 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/324 ,  H01L21/76883 ,  H01L21/76889 ,  H01L29/401 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66143 ,  H01L29/8725

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The layer may include a first metal and a second metal. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act. Thereafter, the stripped first structure may be subjected to a second annealing act.

Abstract translation: 许多变型可以包括一种方法，其可以包括相对于形成在第一半导体外延层中的至少一个沟槽结构，在覆盖位置的第一半导体外延层（外延层）上沉积第一层。 该层可以包括第一金属和第二金属。 可以对第一半导体外延层进行至少第一退火动作以提供第一结构。 可以剥离第一结构的至少一部分以去除在第一退火过程中不与硅反应形成硅化物的任何第一层。 此后，剥离的第一结构可以进行第二退火作用。