公开(公告)号：US09716187B2

公开(公告)日：2017-07-25

申请号：US14640240

申请日：2015-03-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Michael Thomason

IPC: H01L27/06 ,  H01L27/095 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L29/36 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/8725 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66143

Abstract: In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. The active trenches are configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.

公开(公告)号：US09716151B2

公开(公告)日：2017-07-25

申请号：US14160273

申请日：2014-01-21

Applicant: Semiconductor Components Industries, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Mingjiao Liu ,  Michael Thomason

IPC: H01L29/872 ,  H01L29/36 ,  H01L29/66 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L29/36 ,  H01L21/2652 ,  H01L21/266 ,  H01L29/66143 ,  H01L29/8725

Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalk and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.

公开(公告)号：US09331065B2

公开(公告)日：2016-05-03

申请号：US14803365

申请日：2015-07-20

Applicant: Semiconductor Components Industries, LLC

Inventor： Gordon M. Grivna ,  Jefferson W. Hall ,  Mohammed Tanvir Quddus

IPC: H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L21/762 ,  H01L27/06 ,  H01L29/872 ,  H01L29/40

CPC classification number: H01L27/0255 ,  H01L21/76224 ,  H01L27/0629 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1037 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/402 ,  H01L29/42364 ,  H01L29/66143 ,  H01L29/7806 ,  H01L29/8725

Abstract: A diode (200) is disclosed having improved efficiency, smaller form factor, and reduced reverse biased leakage current. Schottky diodes (212) are formed on the sidewalls (210) of a mesa region (206). The mesa region (206) is a cathode of the Schottky diode (212). The current path through the mesa region (206) has a lateral and a vertical current path. The diode (200) further comprises a MOS structure (214), p-type regions (220), MOS structures (230), and p-type regions (232). MOS structure (214) with the p-type regions (220) pinch-off the lateral current path under reverse bias conditions. P-type regions (220), MOS structures (230), and p-type regions (232) each pinch-off the vertical current path under reverse bias conditions. MOS structure (214) and MOS structures (230) reduce resistance of the lateral and vertical current path under forward bias conditions. The mesa region (206) can have a uniform or non-uniform doping concentration.

公开(公告)号：US20150243557A1

公开(公告)日：2015-08-27

申请号：US14472492

申请日：2014-08-29

Applicant: Semiconductor Components Industries, LLC

Inventor： Michael Thomason ,  Mohammed Tanvir Quddus ,  James Morgan ,  Mihir Mudholkar ,  Scott Donaldson

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/324

CPC classification number: H01L21/28537 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/324 ,  H01L21/76883 ,  H01L21/76889 ,  H01L29/401 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66143 ,  H01L29/8725

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The layer may include a first metal and a second metal. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act. Thereafter, the stripped first structure may be subjected to a second annealing act.

Abstract translation: 许多变型可以包括一种方法，其可以包括相对于形成在第一半导体外延层中的至少一个沟槽结构，在覆盖位置的第一半导体外延层（外延层）上沉积第一层。 该层可以包括第一金属和第二金属。 可以对第一半导体外延层进行至少第一退火动作以提供第一结构。 可以剥离第一结构的至少一部分以去除在第一退火过程中不与硅反应形成硅化物的任何第一层。 此后，剥离的第一结构可以进行第二退火作用。

公开(公告)号：US10700219B1

公开(公告)日：2020-06-30

申请号：US16789499

申请日：2020-02-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Jefferson W. Hall

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/47 ,  H01L27/07 ,  H01L27/095 ,  H01L29/66 ,  H01L27/02

Abstract: A method for manufacturing a semiconductor component includes forming first mesa and second mesa structures from a semiconductor material by etching trenches into the semiconductor material. A doped region having a multi-concentration dopant profile is formed in at least the first mesa structure and doped polysilicon is formed in the trenches. The trenches are formed in a geometric pattern. A contact having three contact types is formed, wherein a first contact type is formed to the first mesa structure, a second contact type is formed to the second mesa structure, and a third contact type is formed to the doped polysilicon in the trenches. The first contact type has electrical properties between a conventional Schottky contact and a conventional Ohmic contact without being a conventional Schottky contact or a conventional Ohmic contact, the second contact type is a Schottky contact, the third contact type is an Ohmic contract.

公开(公告)号：US10566466B2

公开(公告)日：2020-02-18

申请号：US16396446

申请日：2019-04-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Zia Hossain

IPC: H01L29/78 ,  H01L29/872 ,  H01L29/40 ,  H01L29/06

Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.

公开(公告)号：US10431699B2

公开(公告)日：2019-10-01

申请号：US14640242

申请日：2015-03-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Michael Thomason

IPC: H01L29/872 ,  H01L29/66 ,  H01L29/36 ,  H01L29/16 ,  H01L29/20 ,  H01L29/205

Abstract: In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. A first active trench is configured to be at a shallower depth than the termination trench to provide a trench depth difference. A second active trench is configured to be at a depth similar to the termination trench. The selected trench depth difference in combination with one or more of the other second active trench depth, the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, first active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.

公开(公告)号：US09263598B2

公开(公告)日：2016-02-16

申请号：US14181207

申请日：2014-02-14

Applicant: Semiconductor Components Industries, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Mark Griswold ,  Ali Salih

IPC: H01L29/00 ,  H01L29/872 ,  H01L29/66 ,  H01L29/47

CPC classification number: H01L29/47 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/28537 ,  H01L29/0615 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/872 ,  H01L29/8725

Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.

Abstract translation: 肖特基器件包括在半导体材料的一部分中的势垒高度调节层。 根据一个实施例，肖特基器件由第一导电类型的半导体材料形成，该半导体材料具有从半导体材料的第一主表面延伸到半导体材料中的第二导电类型的势垒高度调节层， 小于零偏置耗尽边界。 形成与掺杂层接触的肖特基接触。

公开(公告)号：US08815682B2

公开(公告)日：2014-08-26

申请号：US13931017

申请日：2013-06-28

Applicant: Semiconductor Components Industries, LLC

Inventor： Gordon M. Grivna ,  Jefferson W. Hall ,  Mohammed Tanvir Quddus

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/762 ,  H01L29/872 ,  H01L29/06

CPC classification number: H01L29/872 ,  H01L21/76224 ,  H01L27/0629 ,  H01L29/0623 ,  H01L29/66143 ,  H01L29/8725

Abstract: A diode (200) is disclosed having improved efficiency, smaller form factor, and reduced reverse biased leakage current. Schottky diodes (212) are formed on the sidewalls (210) of a mesa region (206). The mesa region (206) is a cathode of the Schottky diode (212). The current path through the mesa region (206) has a lateral and a vertical current path. The diode (200) further comprises a MOS structure (214), p-type regions (220), MOS structures (230), and p-type regions (232). MOS structure (214) with the p-type regions (220) pinch-off the lateral current path under reverse bias conditions. P-type regions (220), MOS structures (230), and p-type regions (232) each pinch-off the vertical current path under reverse bias conditions. MOS structure (214) and MOS structures (230) reduce resistance of the lateral and vertical current path under forward bias conditions. The mesa region (206) can have a uniform or non-uniform doping concentration.

Abstract translation: 公开了一种二极管（200），其具有改进的效率，较小的外形尺寸和减小的反向偏置漏电流。 肖特基二极管（212）形成在台面区域（206）的侧壁（210）上。 台面区域（206）是肖特基二极管（212）的阴极。 通过台面区域（206）的电流路径具有横向和垂直电流路径。 二极管（200）还包括MOS结构（214），p型区（220），MOS结构（230）和p型区（232）。 具有p型区域（220）的MOS结构（214）在反向偏压条件下夹紧横向电流路径。 P型区域（220），MOS结构（230）和p型区域（232）各自在反向偏置条件下夹紧垂直电流路径。 MOS结构（214）和MOS结构（230）在正向偏置条件下降低横向和垂直电流通路的电阻。 台面区域（206）可以具有均匀或不均匀的掺杂浓度。

公开(公告)号：US10923604B2

公开(公告)日：2021-02-16

申请号：US16722093

申请日：2019-12-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Zia Hossain

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.