公开(公告)号：US10366885B2

公开(公告)日：2019-07-30

申请号：US15350777

申请日：2016-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC: H01L21/02 ,  H01L21/283 ,  B23K26/352 ,  B23K26/06 ,  B23K26/073 ,  H01L27/12 ,  H01L21/268 ,  B23K101/40 ,  H01L27/146

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

公开(公告)号：US10910219B2

公开(公告)日：2021-02-02

申请号：US16522930

申请日：2019-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC: H01L21/02 ,  H01L21/283 ,  B23K26/352 ,  B23K26/06 ,  B23K26/073 ,  H01L27/12 ,  H01L21/268 ,  B23K101/40 ,  H01L27/146

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

公开(公告)号：US09748099B2

公开(公告)日：2017-08-29

申请号：US14145235

申请日：2013-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC: H01L21/02 ,  H01L21/268 ,  B23K26/06 ,  B23K26/073 ,  H01L27/12 ,  H01L21/283 ,  B23K26/00 ,  B23K101/40 ,  H01L27/146

CPC classification number: H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

Abstract: A method of manufacturing a semiconductor device includes modifying a first laser beam from a first laser to form a first linear-shaped laser beam and modifying a second laser beam from a second laser to form a second linear-shaped laser beam. The method further includes overlaying the first linear-shaped laser beam and the second linear-shaped laser beam to form an overlayed linear-shaped laser beam, wherein the overlayed linear-shaped laser beam has a width and a length where the length is ten times or more as large as the width. The method also includes scanning a semiconductor film formed over a substrate with the overlayed linear-shaped laser beam to increase crystallinity of the semiconductor film, and patterning the semiconductor film to form a semiconductor layer which includes a channel formation region of a transistor.