METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20160329531A1

    公开(公告)日:2016-11-10

    申请号:US15214989

    申请日:2016-07-20

    摘要: A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.

    摘要翻译: 一种制造半导体器件的方法包括:在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后,将元件形成层与具有透光性的基板分离。