公开(公告)号：US10516062B2

公开(公告)日：2019-12-24

申请号：US16003145

申请日：2018-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L29/24

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US11824105B2

公开(公告)日：2023-11-21

申请号：US17227450

申请日：2021-04-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/51 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/022 ,  H01L21/02263 ,  H01L27/1225 ,  H01L29/513 ,  H01L29/7869 ,  H01L29/78609

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US11355645B2

公开(公告)日：2022-06-07

申请号：US17065635

申请日：2020-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Keisuke Murayama

IPC: H01L29/78 ,  H01L29/786

Abstract: A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

公开(公告)号：US09997639B2

公开(公告)日：2018-06-12

申请号：US15062276

申请日：2016-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/022 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US20140110708A1

公开(公告)日：2014-04-24

申请号：US14062481

申请日：2013-10-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/51

CPC classification number: H01L29/78606 ,  H01L21/02109 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.

Abstract translation: 半导体器件包括晶体管，其包括在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅电极重叠的多层膜，其间设置有栅极绝缘膜，以及与多层膜接触的一对电极 和覆盖晶体管的氧化物绝缘膜。 多层膜包括氧化物半导体膜和含有In或Ga的氧化物膜，氧化物绝缘膜含有比化学计量组成中的氧更多的氧，并且在晶体管中，通过偏置 - 温度应力测试，阈值电压不变， 正方向或负方向的变化量小于或等于1.0V，优选小于或等于0.5V。

公开(公告)号：US20140034954A1

公开(公告)日：2014-02-06

申请号：US13957819

申请日：2013-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama ,  Daisuke Matsubayashi ,  Keisuke Murayama

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  G02F1/1339 ,  G02F1/134363 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3265 ,  H01L29/7869

Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

Abstract translation: 提供一种包括电容器的半导体器件，其电容量增加而不降低开口率。 半导体器件包括：晶体管，包括透光半导体膜，电容器，其中电介质膜设置在一对电极之间;绝缘膜设置在透光半导体膜上;以及透光导电膜， 绝缘膜。 在电容器中，与晶体管中的透光性半导体膜相同的表面上形成至少含有铟（In）或锌（Zn）的金属氧化物膜作为一个电极，透光性导电膜作为 设置在透光半导体膜上的绝缘膜用作电介质膜。

公开(公告)号：US11355648B2

公开(公告)日：2022-06-07

申请号：US16720296

申请日：2019-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L29/24

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US10559699B2

公开(公告)日：2020-02-11

申请号：US16180210

申请日：2018-11-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Keisuke Murayama

IPC: H01L29/78 ,  H01L29/786

Abstract: A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

公开(公告)号：US10158026B2

公开(公告)日：2018-12-18

申请号：US15262547

申请日：2016-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Keisuke Murayama

IPC: H01L29/78 ,  H01L21/16 ,  H01L21/00 ,  H01L29/24 ,  H01L21/47 ,  H01L29/786

Abstract: A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

公开(公告)号：US09941309B2

公开(公告)日：2018-04-10

申请号：US15223079

申请日：2016-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama ,  Daisuke Matsubayashi ,  Keisuke Murayama

IPC: H01L29/82 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/1362 ,  H01L27/32 ,  G02F1/1339 ,  G02F1/1345 ,  G02F1/1343

CPC classification number: H01L27/1255 ,  G02F1/1339 ,  G02F1/134363 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3265 ,  H01L29/7869

Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.