公开(公告)号：US20220336616A1

公开(公告)日：2022-10-20

申请号：US17852429

申请日：2022-06-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tomoki HIRAMATSU

IPC分类号： H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/04 ,  H01L21/02

摘要： A stack with excellent electrical characteristics and reliability is provided. The stack includes an insulator, a conductor, and a first oxide between the insulator and the conductor; the first oxide includes a first c-axis-aligned crystal region; and a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side. Alternatively, the stack includes an insulator, a conductor, a first oxide between the insulator and the conductor, and a second oxide facing the first oxide with the insulator therebetween; the first oxide includes a first c-axis-aligned crystal region; a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side; the second oxide includes a second c-axis-aligned crystal region; and a c-axis of the second crystal region is substantially perpendicular to a plane of the second oxide on the insulator side.

公开(公告)号：US20210082920A1

公开(公告)日：2021-03-18

申请号：US16961976

申请日：2019-01-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yusuke NONAKA ,  Noritaka ISHIHARA ,  Tomoki HIRAMATSU ,  Ryunosuke HONDA ,  Tomoyo KAMOGAWA ,  Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L27/1156 ,  H01L29/786

摘要： A semiconductor device having high operation frequency is provided. The semiconductor device includes a transistor including a first conductive layer, a first insulating layer, a second insulating layer, a first oxide, a second oxide, a third oxide, a third insulating layer, and a second conductive layer that are stacked in this order, and a fourth insulating layer. The first conductive layer and the second conductive layer include a region overlapping with the second oxide. In a channel width direction of the transistor, a level of the bottom surface of the second oxide is from more than or equal to −5 nm to less than 0 nm when a level of a region of the bottom surface of the second conductive layer which does not overlap with the second oxide is regarded as a reference.

公开(公告)号：US20200266281A1

公开(公告)日：2020-08-20

申请号：US16755208

申请日：2018-10-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Tomoki HIRAMATSU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Yuta ENDO

IPC分类号： H01L29/51 ,  H01L21/8238

摘要： A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.

公开(公告)号：US20160351720A1

公开(公告)日：2016-12-01

申请号：US15159032

申请日：2016-05-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA ,  Motoki NAKASHIMA ,  Tomoki HIRAMATSU

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/133 ,  G02F1/1368 ,  G02F1/1337 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/78606 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： To suppress a change in electrical characteristics and improve reliability in a transistor. The transistor includes a first gate electrode, a first insulating film over the first gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the oxide semiconductor film, a fourth insulating film over the third insulating film, a second gate electrode over the fourth insulating film, and a fifth insulating film over the second gate electrode. One or more of the second insulating film, the third insulating film, and the fourth insulating film include a halogen element. The halogen element is detected from one or more of a top surface, a bottom surface, and a side surface of the oxide semiconductor film.

摘要翻译： 抑制电特性的变化，提高晶体管的可靠性。 晶体管包括第一栅电极，第一栅电极上的第一绝缘膜，第一绝缘膜上的第二绝缘膜，第二绝缘膜上的氧化物半导体膜，与氧化物半导体膜电连接的源极， 与氧化物半导体膜电连接的漏电极，氧化物半导体膜上的第三绝缘膜，第三绝缘膜上的第四绝缘膜，第四绝缘膜上的第二栅电极，以及第二绝缘膜上的第五绝缘膜 。 第二绝缘膜，第三绝缘膜和第四绝缘膜中的一个或多个包括卤素元素。 卤素元素从氧化物半导体膜的顶表面，底表面和侧表面中的一个或多个检测。